• 제목/요약/키워드: RE

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Characteristics of Sparkover Discharge in Flowing Air with Reynolds Number's Variable (Reynolds Number를 변수로한 유동공기의 방전특성에 관한 연구)

  • 김영훈;이동인;이광식;김상구
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 1990.10a
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    • pp.41-46
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    • 1990

  • This paper shows the characteristics of sparkover discharge in flowing air ranging from O(Reynolds number, Re to 10.52$\times$104(Re). Also, we investigated changes of dis-charge pattern for constant input power by adjustment of the Re. The important results obtained from this paper are as followers. The maxinum sparkover voltage of flowing air are about 6.3[kV] higher than those of static air. The discharge pattern can be controlled by adjustment of the Re.

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[ $^{188}Re$ ]-Labeled Radiopharmaceuticals ($^{188}Re$ 표지 방사성의약품)

  • Jeong, Jae-Min
    • The Korean Journal of Nuclear Medicine
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    • v.35 no.5
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    • pp.293-300
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    • 2001

  • The search for an ideal radioisotope for radiotherapy continues. As a generator-produced radioisotope emitting both beta and gamma rays with a short physical half-life of 16.9 hr, $^{188}Re$ is an excellent candidate for radiotherapy. Its applications Include the irradiation of coronary artery to prevent restenosis, treatment of rheumatoid arthritis, treatment of peritoneal effusion, palliation of metastatic bone pain, and treatment of liver cancer.

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Resistive Switching Characteristics of Amorphous GeSe ReRAM without Metalic Filaments Conduction

  • Nam, Gi-Hyeon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.368.1-368.1
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    • 2014

  • We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

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Structural and Photoluminescence Properties of BaMoO4:RE (RE=Sm, Eu, Tb, Dy, Tm) Phosphors (BaMoO4:RE (RE=Sm, Eu, Tb, Dy, Tm) 형광체의 구조 및 발광 특성)

  • Gang, Min-Ji;Jo, Sin-Ho
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.105-106
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    • 2012

  • 고상반응법을 사용하여 다양한 활성제 이온 (Eu, Sm, Tb, Tm, Dy)을 도핑한 $BaMoO_4$ 형광체 분말을 제조하였다. 합성한 형광체의 결정 구조는 활성제 종류에 관계없이 $2{\theta}=26.34^{\circ}$에서 주 피크를 갖는 정방정계이었다. 발광스펙트럼의 경우에 첨가한 활성제이온에 따라 다양한 색상을 발생하였다.

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