• Journal of Information Technology Applications and Management
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• v.11 no.1
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• pp.189-200
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• 2004

Recently Flash Memory which is small and low-powered is widely used as a storage of embedded system, because an embedded system requests portability and a fast response. To resolve a difference of access time between a storage and RAM, Linux is using disk caching which copies a part of file on disk into RAM. It is not also an exception on embedded system. A READ access-time of flash memory is similar to RAMs. So, when a process on an embedded system reads data, it is similar to the time to access cached data in RAM and to access directly data on a flash memory. On the embedded system using limited memory, using a disk cache is that wastes much time and memory spaces to manage it and can not reflects the characteristic of a flash memory. This paper proposes the regular file access of limited using a page cache in the file system based on a flash memory and reflects the characteristic of a flash memory. The proposed algorithm minimizes power consumption because access numbers of the RAM are reduced and doesn't waste a memory space because it accesses directly to a flash memory Therefore, the performance improvement of the system applying the proposed algorithm is expected.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.98-103
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• 2008

1T1C DRAM has been facing technological and physical constraints that make more difficult their further scaling. Thus there are much industrial interests for alternative technologies that exploit new devices and concepts to go beyond the 1T1C DRAM technology, to allow better scaling, and to enlarge the memory performance. The technologies of DRAM cell are changing from 1T1C cell type to capacitor-less 1T-gain cell type for more scalable cell size. But floating body cell (FBC) of 1T-gain DRAM has weak retention properties than 1T1C DRAM. FET-type 1T-FeRAM is not adequate for long term nonvolatile applications, but could be a good alternative for the short term retention applications of DRAM. The proposed nonvolatile refresh scheme is based on utilizing the short nonvolatile retention properties of 1T-FeRAM in both after power-off and power-on operation condition.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.5
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• pp.60-66
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• 2020

In this paper, we describe a rope tension automatic equalizer that automatically adjusts several rope tensions connecting the elevator car and the counterweight. The automatic rope tension equalizer is composed of a body, ram, and rope shaft. The body includes a cylinder hole, in which a ram is assembled. A rope shaft is assembled in a hole in the ram. Moreover, the rope is fixed to the rope shaft, with a hole through which fluid can pass between each cylinder hole and the hole of the body. The central concept is that the force of each rope is evenly distributed by the hydraulic pressure between the ram and the body cylinder when the rope is pulled. The thickness of the jaw connecting the small and large diameters of the body of the rope tension automatic equalizer was 15 mm based on structural analysis. The results of the representative experiment to install the produced rope tension equalizer on the elevator revealed it was possible to reduce the rope tension deviation by more than 71 kg.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.4
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• pp.199-203
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• 2006

This paper presents an ASER (Accelerated Soft Error Rate) integral model. The model is based on the facts that the generated EHP/s(electron hole pairs) are diminished after some residual range of the incident alpha particle, where residual range is a function of the incident angle and the capping layer thickness over the semiconductor junction. The ASER is influenced by the flux of the alpha particles, the junction area ratio, the alpha particle incident angle when the critical charge is same as the collected charge, and the sizes of the alpha source and the chip. The model was examined with 8M static RAM samples. The measured ASER data showed good agreement with the calculated values using the model. The ASER decreased exponentially with respect to the operational voltage. As the capping layer thickness increases up to $16{\mu}m$, the ASER increases, and after that thickness, the ASER decreases. The ASER increased as the depth of BNW increased from $0{\mu}m\;to\;4{\mu}m$. and then saturated. The ASER decreased as the node capacitance increased from 2fF to 5fF.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.34 no.4
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• pp.17-24
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• 2006

Hydrodynamic ram of aircraft fuel tanks is one of main ballistic battle damages of an aircraft and has great importance to airframe survivability design. Basic concept, physics and research history of hydrodynamic ram are investigated. The penetration and internal detonation of a simple fuel tank and ICW(Intermediate Complexity Wing) are analyzed by computational method. Structural rupture and fluid burst are analytically realized using general coupling and coupling surface interaction. The results such as fluid pressure, tank stress and displacement are shown and future research chances are suggested based on the study.

• Journal of the Korea Institute of Military Science and Technology
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• v.18 no.1
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• pp.22-30
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• 2015

In this research, items and contents of SONAR were derived from investigation of OMS/MP of previously-operated submarines and domestic and international references related to weapon system. Such items and contents were established in detail and were categorized into four separate groups after consulting system design experts and specialists in the field of SONAR's operation. Ultimately, based on wartime and peacetime scenario and operation concept of SONAR, RAM values were obtained through various methods using submarine-operating records and maintenance records for the past eleven years.

• ETRI Journal
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• v.33 no.2
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• pp.267-274
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• 2011

This paper proposes an efficient masking method for the block cipher SEED that is standardized in Korea. The nonlinear parts of SEED consist of two S-boxes and modular additions. However, the masked version of these nonlinear parts requires excessive RAM usage and a large number of operations. Protecting SEED by the general masking method requires 512 bytes of RAM corresponding to masked S-boxes and a large number of operations corresponding to the masked addition. This paper proposes a new-style masked S-box which can reduce the amount of operations of the masking addition process as well as the RAM usage. The proposed masked SEED, equipped with the new-style masked S-box, reduces the RAM requirements to 288 bytes, and it also reduces the processing time by 38% compared with the masked SEED using the general masked S-box. The proposed method also applies to other block ciphers with the same nonlinear operations.

• Proceedings of the KIEE Conference
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• 2003.07d
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• pp.2609-2611
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• 2003

In this study, we explain the process and the technique required for implementing web-based remote control system based on embedded processor, SAl110, and embedded Linux. At first. cross-compile environment for target system should be constructed on host computer, and bootloader in charge of Linux booting may be loaded on the target system. Then, kernel image is compiled and loaded on the target system. Embedded Linux porting process is completed when ram disk image is generated. Finally, we load wed-server and device driver on the ram disk and make web-page for remote control using CGI. Through the above process, we implement web-based remote control system and present the result.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.342-342
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• 2012

Resistance-change Random Access Memory (ReRAM), which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.05a
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• pp.244-247
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• 2008

Based on ISL' S225 superdetonative mode ram accelerator, numerical simulation is conducted for strong mixture cases ($2H_2+O_2+3CO_2,\;2H_2+O_2+2.5CO_2$). For 3.0CO2 case, projectile is not acclerated, but 2.5CO2 case has sucessful acceleration. It shows that superdetonative mode ram accelerator can be operated when using mixture which strong enough to ignition.