• Title/Summary/Keyword: R-4O4A

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Growth of Single Crystal $\beta$-BaB2O4 by the Direct Czochralski Method (Czochralski방법에 의한 $\beta$-BaB2O4단결정 성장)

  • ;;R.K. Route;R.S. Feigelson
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06b
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    • pp.239-257
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    • 1996
  • $\beta$-BaB2O4는 고출력 가시광선 및 적외선을 발진시키는데 유용한, 비선형 특성을 가진 물질이다. $\alpha$-$\beta$ 상전이 온도가 녹는점보다 18$0^{\circ}C$ 낮기 때문에 보통 flux법으로 단결정을 성장시킨다. 수년전 Itoh등은 $\beta$-BaB2O4단결정을 congruent조성의 용액으로부터 Czochralski법으로 metastable한 상태에서 직접 성장시켰다. 그렇지만 그 공정은 잘 이해되지 않고 있으며 재현하기가 매우 어렵다. 저자들은 $\beta$-BaB2O4단결정을 용액표면온도도 1034$^{\circ}$-1085$^{\circ}C$, pulling rate 3mm/h, 10-30 rpm의 범위에서 성장시켰으며 융액표면의 온도구배는 $\beta$-상으로 성장시키는데 매우 중요한 인자로 여겨진다. Seed로는 직경 1-2mm의 c축방향 $\beta$-BaB2O4단결정 봉이 상용되어 성장방향을 조절하고 열응력을 최소화시켰다. 성장된 $\beta$-상의 단결정들은 6-fold모양을 하며 표면에 작은 비늘같은 것들이 붙어있고 중심부에 core가 있는 것을 알았다. Flux법으로 성장시킨 $\beta$-BaB2O4단결정을 사용한 seeds는 단결정 성장 및 냉각 중에 cracks이 자주 발생하였으며, boule의 cracks은 afterheater를 사용할 경우 다소 줄일 수 있었다. 성장된 단결정의 광학특성이 측정되었다.

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Synthesis and Molecular Structure of p-tert-butylcalix[4]arene Hexanoate

  • Park, Young-Ja;Kwanghyun No;Cho, Sun-Hee
    • Korean Journal of Crystallography
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    • v.10 no.1
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    • pp.1-8
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    • 1999
  • Two conformational isomers of p-tert-butylcalix[4]arene hexanoate were prepared from the reaction of-p-tert-butylcalix[4]arene and hexanoly chloride in the presence of AlCl3 in CH2Cl2 and their structures were determined by NMR spectra and X-ray diffraction as a cone and a 1,3-alternate conformer, respectively. The crystal of cone conformer (C68H96O8·(CH3)2CO) is triclinic, P, a=15.066(1) , b=16.063(1) , c=16.365(1) , α=79.75(2)o, β=109.95(2)o, γ=80.32(0)o, V=3602.7(4) 3, Z=2. The intensity data were collected on Simens SMART diffractometer/CCD area detector. The structure was solved by direct method and refined by least-squares calculations to a final R value of 0.144 for 4638 observed reflections. The molecular conformation is distorted symmetric cone with the flattening A and D phenyl rings. The crystal of 1,3-alternate conformer (C68H96O8·2CHCl3) is orthorhombic, Pca21, a=34.586(5) , b=10.207(3) , c=20.394(4) , V=7199(3) 3, Z=4. The intensity data were collected on an Enraf-Noninus CAD-4 Diffractometer with a graphite monochromated Mo-K radiation. The structure was solved by direct method and refined by least-squares calculations to a final R value of 0.152 for 2241 observed reflections. The molecule has a pseudo mirror symmetric 1,3-alternate conformation.

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Development of Metal Compound Explosives Using KIO4 and TiH2 (KIO4와 TiH2를 이용한 금속복합화약 개발)

  • Ahn, Gilhwan;Kim, Sangbaek;Kim, Junhyung;Ryu, Byungtae
    • Journal of the Korean Society of Propulsion Engineers
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    • v.24 no.1
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    • pp.58-63
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    • 2020
  • THPP is a type of metallic complex explosive used in initiators, consisting of TiH2 and KClO4. In this case KClO4 includes ClO4- which is a harmful substance that may cause thyroid dysfunction or tumors. In this study KIO4 is applied to a new type of environmentally friendly explosive as a substitute to the conventional KClO4. Tests were carried out to see if KIO4 can be made a successful replacement for KClO4.

X-Ray Crystal Structure Determination of Diazatricyclodione (디아자트리사이클로디온의 X선 결정구조 결정)

  • Kim, Sang-Su;An, Jong-Il;Han, Bo-Seop
    • Korean Journal of Crystallography
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    • v.1 no.2
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    • pp.84-90
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    • 1990
  • 1,3-Diazatricyclo (5.2.1.Os .to) decane-2,11-dione , C8H10N2O2. MW=166.15, Monoclinic, P2/n a= 6.585(7) , b=9.089(4), c=12.937(10)A, β=95.72(5)˚, V=770.4A3, Z=4, Dc=1.43(4) g/cm3, λ (Mo Ka)=0.7093A, r=1.Ocm-1, T=295˚K, final R=0.037 for 698 unique observed reflections. The compound is the product of the intramolecular (2+2) photocycloaddition of Nl-(w-butenyl)uracil and belongs to a (5.2.1.O5.10) tricyclic system. A pair of molecules related by the inversion symmetry are held together by the strong hydrogen bonding interactions between 02 and H3 of the uracil moiety.

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[ $C_{28}H_{41}N_4O_4Br\;{\cdot}\;2H_2O$ ] (C_{28}H_{41}N_4O_4Br\;{\cdot}\;2H_2O$의 결정구조)

  • Kim Moon-Jib;Lee Jung-Ah;Jo Kyung-Jin;Choi Ki-Young
    • Korean Journal of Crystallography
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    • v.15 no.2
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    • pp.93-98
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    • 2004
  • The structure of C_{28}H_{41}N_4O_4Br\;{\cdot}\;2H_2O$ has been determined by X-ray deffraction methods. The crystal system is triclinic, space group Pl, unit cell constants, a=9.000(1) $\AA$, b=9.312(3) $\AA$, c=9.344(2) $\AA$, $\alpha=89.37(20)^{\circ},\;\beta=68.81(3)^{\circ},\;\gamma=84.70(4)^{\circ},\;V=726.7(8){\AA},\;T=298K,\;Z=1,\;D_c=1.402Mgm^{-3}$. The intensity data were collected on an Enraf-Nonius CAD4 Diffractometer with graphite monochromated $MoK\alpha$ radiation $(\lambda=0.71073\;{\AA}$. The molecular structure was solved by direct methods and refined by full-matrix least squares to a final $R=5.95\%$ for 2521 unique observed $F_0>4\sigma(F_0)$reflections and 370 parameters.

Crystallographic Characterization of the (Bi, La)4Ti3O12 Film by High-Resolution Electron Microscopy (고분해능 전자현미경법을 이용한 (Bi, La)4Ti3O12 박막의 결정학적 특성 평가)

  • Lee, Doek-Won;Yang, Jun-Mo;Park, Tae-Su;Kim, Nam-Kyung;Yeom, Seung-Jin;Park, Ju-Chul;Lee, Soun-Young;Park, Sung-Wook
    • Korean Journal of Materials Research
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    • v.13 no.7
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    • pp.478-483
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    • 2003
  • The crystallographic characteristics of the $(Bi, La)_4$$Ti_3$$O_{12}$ thin film, which is considered as an applicable dielectrics in the ferroelectric RAM device due to a low crystallization temperature and a good fatigue property, were investigated at the atomic scale by high resolution transmission electron microscopy and the high resolution Z-contrast technique. The analysis showed that a (00c) preferred orientation and a crystallization of the film were enhanced with the diffraction intensity increase of the (006) and (008) plane as the annealing temperature increased. It indicated a change of the atomic arrangement in the (00c) plane. Stacking faults on the (00c) plane were also observed. Through the comparison of the high-resolution Z-contrast image and the $Bi_4$$Ti_3$$O_{12}$ atomic model, it was evaluated that the intensity of the Bi atom was different according to the atomic plane, and it was attributed to a substitution of La atom for Bi at the specific atom position.

The Study on Phase Transition Pressure of Donor doped Pb(Zr0.52Ti0.48)O3 Ceramics with Diamond Anvil Cell (다이아몬드 엔빌 셀을 이용한 Donor doped Pb(Zr0.52Ti0.48)O3 세라믹스의 상전이 압력 연구)

  • Cho, Kyung-Ho;Ko, Young-Ho;Seo, Chang-Eui;Kim, Kwang-Joo
    • Journal of the Korean Ceramic Society
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    • v.48 no.5
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    • pp.471-478
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    • 2011
  • Investigations of crystal structure and phase transition of $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics doped with A-site substitution impurity (La, Nd) or B-site substitution impurity (Sb, Nb) at 2 mol% concentration were carried out. X-ray diffraction patterns of impurities doped $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics have been measured at pressures up to ~5 GPa with diamond anvil cell and synchrotron radiation. The patterns were obtained at room temperature using methanol-ethanol mixture as pressure-transmitting media. In order to refine the crystal structure, Rietveld analysis has been performed. The structures of impurities doped $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics are tetragonal in space group P4mm at ambient pressure and are transformed into a cubic phase in space group Pm$\bar{3}$m as the pressure increases. In this study, when A-site substitution donor $La^{3+}$ or $Nd^{3+}$ ion was added to $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics, the phase transition phenomena showed up at the pressure of 2.5~4.6 GPa, but when B-site substitution donor $Nb^{5+}$ or $Sb^{5+}$ ion was added to it, the phase transition appeared at relatively lower pressure of 1.7~2.6 GPa.

Growth of Non-Polar a-plane ZnO Layer On R-plane (1-102) Sapphire Substrate by Hydrothermal Synthesis (저온 수열 합성법에 의해 (1-102) 사파이어 기판상에 성장된 무분극 ZnO Layer 에 관한 연구)

  • Jang, Jooil;Oh, Tae-Seong;Ha, Jun-Seok
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.4
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    • pp.45-49
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    • 2014
  • In this study, we grew non-polar ZnO nanostructure on (1-102) R-plane sapphire substrates. As for growth method of ZnO, we used hydrothermal synthesis which is known to have the advantages of low cost and easy process. For growth of non-polar, the deposited AZO seed buffer layer with of 80 nm on R-plane sapphire by radio frequency magnetron sputter was annealed by RTA(rapid thermal annealing) in the argon atmosphere. After that, we grew ZnO nanostructure on AZO seed layer by the added hexamethylenetramine (HMT) solution and sodium citrate at $90^{\circ}C$. With two types of additives into solution, we investigated the structures and shapes of ZnO nanorods. Also, we investigate the possibility of formation of 2D non-polar ZnO layer by changing the ratio of two additives. As a result, we could get the non-polar A-plane ZnO layer with well optimized additives' concentrations.

Structures of Fraxinellone Derivatives by Hydrogenation with $PtO_2$ in HOAc (백선피의 성분 Fraxinellone의 백금산 촉매에 의한 환원물질의 구조)

  • Kim, Ju Sun;Kang, Sam Sik
    • Korean Journal of Pharmacognosy
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    • v.44 no.1
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    • pp.6-9
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    • 2013
  • Two fraxinellone-based hydrogenated derivatives were prepared from fraxinellone, a well-known degraded limonin, via catalytic hydrogenation in the presence of $PtO_2$ in HOAc. Their structures were confirmed as (3S,3aR,3'R)-3a,7-dimethyl-3-(tetrahydrofuran-3-yl)-3a,4,5,6-tetrahydroisobenzofuran-1(3H)-one and (3S,3aR,2'R)-3-((R)-1-hydroxybutan-2-yl)-3a,7-dimethyl-3a,4,5,6-tetrahydroisobenzofuran-1(3H)-one on the basis of 2D NMR assignments. The $^{13}C$ NMR assignments of two quaternary carbons in the ${\alpha}$,${\beta}$-unsaturated carbonyl moiety of ${\gamma}$-butyrolactone core of fraxinellone should be revised.

Fabrecation and Characterization of $SrBi_2TaNbO_9$ Ferroelectric Thin Film Prepared by Sol-Gel Method (SOL-GEL법을 이용한 $SrBi_2TaNbO_9$ 강유전성 박막 제조 및 특성 평가)

  • 이진한;박상준;장건익
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.94-98
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    • 2000
  • Polycrystalline SBTN ferroelectric thin films were prepared by sol-gel method with various Nb mole ratios on Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperatures and characterized in terms of phase and microstructure. Relatively a well saturated hysteresis pattern was obtained at x =0.2 in S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin films. At an applied voltage of 5V, the dielectric constant ($\varepsilon$$_{r}$) and dissipation factor (tan $\delta$) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin film (x=0.2) were about 236.2 and 0.034. Measured remanent polarization (2Pr) and coercive field (Ec) were 4.28C/c $m_2$, and 38.88kv/cm respectively. No fatigue was observed up to 6$\times$10$_{10}$ switching cycles at 5V and the normalized polarization reduced by a factor of only 4%.%. 4%.%. 4%.%.%.%.%.

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