• Korean Journal of Materials Research
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• v.14 no.11
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• pp.821-827
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• 2004

Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

• The Journal of Korean Academy of Prosthodontics
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• v.43 no.2
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• pp.176-190
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• 2005

Statement of problem. The current trend in prosthodontics is the adoption of a conservative approach to preparing dental prostheses by minimizing the amount of sound tooth structure removal during preparation. Purpose. The major disadvantage of the adhesion bridge is the inherently poor resistance to dislodgement that its use in areas subjected to high occlusal load is limited. The purpose of this study was to compare the dislodgement resistance of $Bio-pin^{(R)}$, conventional 3-unit and adhesion bridges. Material and methods. The experimental groups were classified as follows : Group I : 3-unit bridge cemented using $Super-Bond^{(R)}$ C&B Group II : Adhesion bridge cemented using $Super-Bond^{(R)}$ C&B Group III : $Bio-pin^{(R)}$ design adhesion bridge without incorporation of $Bio-pin^{(R)}$ (cemented using $Super-Bond^{(R)}$ C&B) Group IV-1 : $Bio-pin^{(R)}$ retained adhesion bridge incorporating a single $Bio-pin^{(R)}$ (cemented using $Super-Bond^{(R)}$ C&B) Group IV-2 : $Bio-pin^{(R)}$ retained adhesion bridge incorporating a single $Bio-pin^{(R)}$ (cemented using $Panavia^{(R)}$ F) Group V : $Bio-pin^{(R)}$ retained adhesion bridge incorporating two $Bio-pins^{(R)}$ (cemented using $Super-Bond^{(R)}$ C&B) Results. The results of this study were as follows : 1. Significant differences in dislodgement resistance of the restorations were found between Group I, Group II and Group III (p<0.05). No significant differences in dislodgement resistance of the restorations were observed between Group I Group IV-1 and Group V. However, there were significant differences in dislodgement resistance between Group II and the other groups (p<0.05). 2. No significant differences in dislodgement resistance of the restorations were observed between GroupIV-1 and GroupIV-2, both of which utilized a single $Bio-pin^{(R)}$. However, significant differences were observed when Group III was compared to either GroupIV-1 or Group V (p<0.05). 3. No significant differences in dislodgement resistance relative to the type of dental cements used were found. Conclusion. From the above results, it is concluded that the dislodgement resistance of $Bio-pin^{(R)}$ bridge restorations utilizing a single $Bio-pin^{(R)}$ is similar to that of a conventional 3-unit bridge. The results also suggest that $Bio-pin^{(R)}$ bridge restorations using a single $Bio-pin^{(R)}$ are a viable alternative to the conventional 3-unit bridge when minimal removal of sound tooth structure and fulfillment of both function and esthetic aspects are considered.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.171-176
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• 2012

As langasite $A_3BC_3D_2O_{14}$ compounds with piezoelectric properties exhibit no phase transition up to the melting point of 1,400-$1,500^{\circ}C$, many high temperature applications are expected for the SAW filter, temperature sensor, pressure sensor, and so on, based on the digital transformation of wider bandwidth and higher-bit rates. It has a larger electromechanical coupling factor compared to quartz and also nearly the same temperature stability as quartz. The $La_3Ga_5SiO_{14}$ (LGS) crystal with the $Ca_3Ga_2Ge_4O_{14}$-type crystal structure was synthesized and the crystal structure was analyzed by Mill et al. It is also an important feature that the growth of the single crystal is easy. In the case of three-element compounds such as $[R_3]_A[Ga]_B[Ga_3]_C[GaSi]_DO_{14}$ (R=La, Pr and Nd), the piezoelectric constant increases with the ionic radius of R. In this study, crystal structures of four-element compounds such as $[A_3]_A[B]_B[Ga_3]_C[Si_2]_DO_{14}$ (A = Ca or Sr, B = Ta or Nb) are analyzed by a single crystal X-ray diffraction, and the mechanism and properties of the piezoelectricity depending on the species of cation was clarified based on the crystal structure.

• Journal of the Mineralogical Society of Korea
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• v.14 no.2
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• pp.128-136
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• 2001

The K-Ba complete solid solution of 7 synthetic hollandite-type minerals ($K_{2x}$ $Ba_{1-x}$ $Cr_2$/$Ti_{6}$ $O_{16}$ , x=0, 0.1, 0.3, 0.5, 0.7, 0.9, 1.0, respectively) are studied by the X-ray powder diffraction and Rietveld refinement to find structural transformation during substitution of $Ba^{2+}$ by $K^{+}$ in A site of the tunnel structure of hollandite. Rietveld indices indicate that $R_{wp}$ with respect to $R^{exp}$ ($R_{wp}$ $R_{exp}$ ) are in the range of 15.66%/20.90% and 14.74%/l9.37%, $R_{B}$ and S(Goodness of Fitness) are 6.45~8.97%, 1.45~1.63, respectively. Unit cell parameters of synthetic hollandites, space group 14/m, are a=10.1194(2)~10.0599(2)$\AA$, c=2.9572(6)~2.9512(7)$\AA$, and V=302.75~298.66$\AA^{3}$. Rutile formed as an impurity in those with more than 50% K contents in hollandite series. Substitution of Ba by K ion in a tunnel structure results in constant decrease of cell parameters, but is not sufficient enough to change the hollandite structure. Our data indicate that transformation of tetragonal 14/m to lower symmetry of monoclinic 12/m in hollandite structure may at least be affected by other cation substitution in same A site and/or by cation substitution in B site.

• Bulletin of the Korean Chemical Society
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• v.7 no.6
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• pp.413-421
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• 1986

Hydrocarbon solution of $Cp_2Zr(CH_3)Cl$ react rapidly with $Na_2Fe(CO)_4$ (1/2 equiv.) to yield $[Cp_2Zr(CH_3)]_2Fe(CO)_4$ and NaCl. The more soluble metal-metal bonded complex $[Cp_2ZrC_8H_{17}]_2Fe(CO)_2$ has also been prepared through the reaction of $Cp_2Zr(C_8H_{17})BF_4$ and $Na_2Fe(CO)_4 (1/2 equiv.). The complexes were characterized by IR, $^1H$ NMR, ^{13}C$ NMR, and elemental analysis. The infrared spectrum of $[Cp_2ZrR]_2Fe(CO)_4$ shows four bands, which is indicative of a cis-structure. The $^{13}C$ NMR spectrum provides evidence for the cis-structure.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.539-546
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• 2003

The GaN/sapphire layered structure is a potential candidate for high frequency devices due to high acoustic velocity of sapphire. Generally, the GaN thin films are epitaxially grown on c, a, and r-plane sapphire substrates. In this study, wave equations of GaN/sapphire structure were calculated according to crystallographic relationship between GaN layer and sapphire substrate. On each plane, the shear velocity was changed by the kH of GaN layer and propagation direction on sapphire substrate. We found electromechanical coupling constant of r-plane was better than the others. As a result, elastic stiffness and electromechanical coupling constant of materials are affected by a cut and an orientation of substrate. GaN/r-plane sapphire structure is more advantageous for high frequency SAW devices.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.37-45
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• 1994

$(NH_4)_{4.5}[H_{3.5}{\alpha}-PtMo_6O_{24}]{\cdot}1.5\;H_2O(A),\;(NH_4)_4[H_4{\beta}-PtMo_6O_{24}]{\cdot}1.5\;H_2O(B),\;and\;K_{3.5}[H_{4.5}{\alpha}-PtMo_6O_{24}]{\cdot}3\;H_2O(C)$ have been synthesized and their molecular structures have been also determined by single-crystal X-ray diffraction technique. The space groups, unit cell parameters, and R factors are as follows: Compound A, monoclinic, $A_{2/a}$, a= 19.074 (3), b=21.490 (3), c=15.183 (2) ${\AA};\;{\beta}$=109.67 (1) ${\AA}$; z=8; R=0.075($IF_0I>4{\sigma}(IF_0I);$ Compound B, triclinic, P$bar{1}$, a=10.776 (2), b=15.174 (4), c=10.697 (3) ${\AA};\;{\alpha}$ =126.29 (2), ${\beta}$=111.55 (2), ${\gamma}$=93.18 (2) ${\AA}$; Z=2; R=0.046($IF_0I>3{\sigma}(IF_0I);$): Compound C, triclinic, Pl, a=12.426 (2), b=13.884 (2), c=10.089 (1) ${\AA}$; ${\alpha}$=102.59 (2), ${\beta}$=110.73 (1), ${\gamma}$=53.93 (1) ${\AA}$; Z=2; R=0.074 ($IF_0I>3{\sigma}(IF_0I)$. Compounds A and C contain the well-known Anderson structure (planar structure) heteropoly oxometalate having approximate $bar{3}_m(D_{3d})$ symmetry, while compound B contains the bent structure heteropoly oxometalate having appproximate $2_{mm}(C2_v)$ symmetry. The bent structure and the planar one are geometrical isomers. These compounds are rot only novel heteroply molybdates containing platinate(IV) but also the first example of geometrical isomerism in the hexamolybdoheteropoly oxometalates. That isomerization surprisingly occurred because of the change of only 0.5 non-acidic hydrogen atom attached to the polyanion such as $[H_{3.5}{\alpha} -PtMo_6O_{24}]^{4.5-}{\to}[H_4{\beta}-PtMo_6O_{24}]^{4-}{\to}[H_{4.5}{\alpha} -PtMo_6O_{24}]^{3.5-}$. It seems that the gradual protonation of the polyanion plays an important role in that isomerism. These heteropolyanions form dimers by strong hydrogen bonds between two heteropolyanions in the respective crystal system.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.881-884
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• 2003

We propose a new pixel structure for Active Matrix OLED (AMOLED). The proposed pixel structure can display full color images by compensating threshold voltage (Vth) variation of driving TFTs. And we obtain an improved contrast ratio(C/R) of higher than 600:1

• Communications of the Korean Mathematical Society
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• v.38 no.1
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• pp.55-67
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• 2023

In this paper we obtain a new structure of a k-annihilating ideal hypergraph of a reduced ring R, by determine the order and size of a hypergraph 𝒜𝒢_k(R). Also we describe and count the degree of every nontrivial ideal of a ring R containing in vertex set 𝒜(R, k) of a hypergraph 𝒜𝒢_k(R). Furthermore, we prove the diameter of 𝒜𝒢_k(R) must be less than or equal to 2. Finally, we determine the minimal dominating set of a k-annihilating ideal hypergraph of a ring R.

• The Korean Journal of Pesticide Science
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• v.6 no.3
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• pp.209-217
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• 2002

Two different QSAR methods, the comparative molecular similarity indices analyses (CoMSIA) and hologram quantitative structure activity relationship (HQSAR) are studied for the fungicidal activities ($pI_{50}$) of 2-N-benzyl-5-phenoxy-3-isothiazolone derivatives against sensitive (SPC: 95CC7105) and resisitive (RPC: 95CC7303) phytophthora blight fungus (Phytaphthora capsici). According to the findings from these QSAR investigation, the cross-validation value, $q^2$ and Pearson correlation coefficient, $r^2$ in the two methods were CoMSIA: RPC; $q^2=0.675,\;r^2=0.942$, SPC; $q^2=0.350,\;r^2=0.876$ and HQSAR: RPC; $q^2=0.519,\;r^2=0.869$, SPC; $q^2=0.483,\;r^2=0.990$, respectively. Therefore, the two models of comparative statistical significance were obtained. From the CoMSIA contour maps, the important factors for selective fungicidal activity against RPC are to be expected that the lower hydrophobic and not bulkiness substituent as hydrogen bonding acceptor have to introduce to meta and para-position (C1-C6) on the phenoxy moiety. And the results of prediction suggest that HQSAR method showed higher fungicidal activity than CoMSIA method.