• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.81-89
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• 2008

Atomic behavior during ion beam sputtering was investigated by using classical molecular dynamics simulation. When Ar ion bombards on Au and Pd(001) surface with various incidence energies and angles, some atoms which gained substantial energy by impacting Ar ion were sputtered out and, simultaneously, others were landed on the surface as if surface atoms were redeposited. It was observed that the redeposited atoms are five times for Au and three times for Pd as many as sputtered atoms irrespective of both incidence energy and angle. From sequential ion bombarding calculations, contrary to the conventional concepts which have described the mechanism of surface pattern formation based only on the erosion theory, the redeposition atoms were turned out to play a significant role in forming the surface patterns.

• Imaging Science in Dentistry
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• v.45 no.3
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• pp.187-192
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• 2015

Cleidocranial dysplasia (CCD) is a rare congenital disorder, typically characterized by persistently open skull sutures, aplastic or hypoplastic clavicles, and supernumerary teeth. Mutations in the gene encoding the runt-related transcription factor 2 (RUNX2) protein are responsible for approximately two thirds of CCD patients. We report a 20-year-old CCD patient presenting not only with typical skeletal changes, but also complex dental anomalies. A previously undiagnosed odontoma, 14 supernumerary teeth, a cystic lesion, and previously unreported fused primary teeth were discovered on cone-beam computed tomography (CBCT) scans. Mutation analysis identified the causal c.578G>A (p.R193Q) mutation in the RUNX2 gene. At 20 years of age, the patient had already missed the optimal period for dental intervention. This report describes the complex dental anomalies in a belatedly diagnosed CCD patient, and emphasizes the significance of CBCT assessment for the detection of dental anomalies and the importance of early treatment to achieve good outcomes.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.445-449
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• 1999

We studied the properties of the InAs epitaxial layers grown of (100)-oriented GaAs ($2^{\circ}$tilted toward[011]) by molecular beam epitaxy. From DCX (double-crystal x0ray), the better crystal quality was shown in InAs epitaxial layers on about 2500$\AA$ GaAs epitaxial layers on GaAs, we obtained the high mobility of InAs epitaxy in As/In BEP ratio (1.2~2.0) from Hall effect measurement. The electron mobility increased as electron concentration increases, until Si cell temperature $960^{\circ}C$$(N_D=2.21\times10^{-17}\textrm{cm}^{-3})$. The mobility decreases as the Si cell temperature increases, at the temperature over $960^{\circ}C$. We obtained the high mobility (1.10$\times$104cm2/V.s) at Si electron concentration of $N_D=2.21\times10^{-17}\textrm{cm}^{-3}$.

• Magazine of the Korea Concrete Institute
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• v.6 no.6
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• pp.190-198
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• 1994

Th~s paper presents the shear behavior in reinforced normal, medium and high strength con crete beams due to the Increase of concrete compressive strength. Twelve shear tests were con ducted on full scale beam speclrnerls havmg concrete compressive stlengths of 360, 670 and 873kg/$cm^2$. Different amounts of shear reinforcement as a variable were investigated according to ACI 318 89. The shear responses are discussed in terms of the shear capacity. the ductility and the reserved strength. The prediction and comparison with the test results are also presented.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.540-543
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• 2004

The stress of MgO thin film, which is used as a dielectric protective layer in AC-PDP, was measured by a laser scanning method. MgO films were deposited bye-beam evaporation on glass substrates with dielectrics layer on them in various deposition temperatures ranging from room temperature to 300 $^{\circ}C$. The compressive stress of MgO films was increased with increasing substrate temperature due to intrinsic stress accumulation, causing the densification of the films. Both firing voltage ($V_f$) and sustaining voltage ($V_s$) were reduced for the higher compressively stressed and densified films. In the other hand, another film properties such as preferred crystallographic orientation and surface roughness seemed not to influence the discharge characteristics of $V_f$ and $V_s$ significantly.

• Progress in Medical Physics
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• v.9 no.1
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• pp.29-35
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• 1998

There has been necessity of an air free ionization chamber using the gold-crystal-aluminium plates, henceforth called the crystal chamber. The crystal chamber formed of parallel plates is very small in size and has more response for absorbed dose of therapeutic radiation beams. The gold plate on the crystal facing the photon and electron beam acts as an intensifier of signals and crystal plate as an ionization medium respectively. Both the copper guard ring and the aluminum collecting electrode are connected to an electrometer. Using high energy photon (6, 15 MV) and electron (9, 12, 15, 18 MeV) beams, the responses of the crystal chamber are evaluated against a PTW Farmer-type chamber at a field size of 10${\times}$10cm$^2$ and 100 cm SSD. The responses of crystal chamber for therapeutic radiation electron and photon beams are greater in magnitude by several order than Farmer. The crystal chamber has good linearity without correction factor C$\_$t,p/ with respect to the signals, a reading reproduction with good accuracy and precision less than 0.5%, and has other useful functions in measuring radiation beams.

• Structural Engineering and Mechanics
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• v.9 no.5
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• pp.505-518
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• 2000

A major cause of premature debonding of tension face plates is shear peeling (Jones et al. 1988, Swamy et al. 1989, Ziraba et al. 1994, Zhang et al. 1995), that is debonding at the plate ends that is associated with the formation of shear diagonal cracks that are caused by the action of vertical shear forces. It is shown in this paper how side plated beams are less prone to shear peeling than tension face plated beams, as the side plate automatically increases the resistance of the reinforced concrete beam to shear peeling. Tests are used to determine the increase in the shear peeling resistance that the side plates provide, and also the effect of vertical shear forces on the pure flexural peeling strength that was determined in the companion paper. Design rules are then developed to prevent premature debonding of the plate ends due to peeling and they are applied to the strengthening and stiffening of continuous reinforced concrete beams. It is shown how these design rules for side plated beams can be adapted to allow for propped and unpropped construction and the time effects of creep and shrinkage, and how side plates can be used in conjunction with tension face plates.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1946-1949
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• 1996

We have performed silicon-to-silicon anodic bonding using glass layer deposited by electron beam evaporation. Wafers can be bonded at $135^{\circ}C$ with an applied voltage of $35V_{DC}$, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that the evaporated glass layer more than $1\;{\mu}$ m thick was suitable for anodic bonding. The role of sodium ions for anodic bonding was also investigated by theoretical bonding mechanism and experimental inspection.

• ETRI Journal
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• v.41 no.6
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• pp.731-738
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• 2019

We proposed a novel electromagnetic band-gap (EBG) cell-embedded antenna structure for reducing the interference that radiates at the antenna edge in wireless access in vehicular environment (WAVE) communication systems for vehicle-to-everything communications. To suppress the radiation of surface waves from the ground plane and vehicle, EBG cells were inserted between micropatch arrays. A simulation was also performed to determine the optimum EBG cell structure located above the ground plane in a conformal linear microstrip patch array antenna. The characteristics such as return loss, peak gain, and radiation patterns obtained using the fabricated EBG cell-embedded antenna were superior to those obtained without the EBG cells. A return loss of 35.14 dB, peak gain of 10.15 dBi at 80°, and improvement of 2.037 dB max at the field of view in the radiation beam patterns were obtained using the proposed WAVE antenna.