• 제목/요약/키워드: R&D Center

검색결과 9,930건 처리시간 0.042초

Fabrication and Characterization of Carbon Nanotube Field Emission Display for HD-TV Applications

  • Lee, Chun-Gyoo;Chi, Eung-Joon;Hwang, Sung-Yeon;Lee, Sang-Jo;Lee, Sang-Jin;Yoon, Tae-Ill;Lee, Byong-Gon;Nam, Joong-Woo;Ryu, Mee-Ae;Han, Ho-Su;Jin, Sung-Hwan;Ahn, Sang-Hyuck;Seo, Hyoung-Cheol;Choi, Jong-Sik;Oh, Tae-Sik;Kang, Sung-Kee;Kim, Jong-Min;Kim, Jung-Woo;Park, Young-Jun;Han, In-Taek;Jin, Yong-Wan
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.191-192
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    • 2003
  • For the CNT-FED to be cost-effective, many efforts for the lower voltage operation have been made in the under-gate cathode structure. In this study, the effects of the frit proportion in the CNT paste, cathode electrode width, CNT-to-counter electrode gap, and the CNT length in the cathode structure were examined.

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Stability of Low Temperature a-Si:H TFT on Stainless Steel Substrate

  • Kim, Sung-Hwan;Kim, Sang-Soo;Park, Yong-In;Peak, Seung-Han;Lee, Kyoung-Mook;Park, Choon-Ho;Lim, Yu-Sok;Kim, Chang-Dong;Kang, In-Byeong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.247-249
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    • 2008
  • Low Temperature a-Si:H TFT on stainless steel substrate has been developed for the flexible electrophoretic display. Stability of low temperature a-Si:H TFT is more important point than its initial device characteristics. Thus, we have studied device characteristics of low temperature a-Si:H TFT in terms of stability for driving electrophoretic display.

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CV Safety & Future Generation COX-2 inhibitors

  • Shin, Song-Seok;Byun, Young-Joo;Lim, Kyung-Min;Choi, Jin-Kyu;Lee, Ki-Wha;Moh, Joo-Hyun;Kim, Jin-Kwan;Jeong, Yeon-Su;Kim, Ji-Young;Choi, Young-Hoon;Koh, Hyun-Ju;Park, Young-Ho;Oh, Young-Im
    • 대한약학회:학술대회논문집
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    • 대한약학회 2005년도 Proceedings of the Convention of the Pharmaceutical Society of Korea Vol.1
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    • pp.67-68
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    • 2005
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a-Si Process-based Advanced SPC TFT for AMOLED Application

  • Lee, Seok-Woo;Lee, Sang-Jin;Ahn, Tae-Joon;Park, Soo-Jeong;Kang, Su-Hyuk;Jung, Sang-Hoon;Lee, Hong-Koo;Kim, Sung-Ki;Park, Yong-In;Kim, Chang-Dong;Yang, Myoung-Su;Kang, In-Byeong;Hwang, Yong-Kee
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.961-963
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    • 2009
  • a-Si process-based advanced-SPC (a-SPC) TFT has been developed and verified by manufacturing an AMOLED panel having improved cost competitiveness by using the existing a-Si infrastructure. The a-SPC TFT had superior device reliability and current drivability to a-Si TFT to meet the requirements of AMOLED backplane.

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14.1" XGA AMLCD with Integrated Black Data Insertion as an application of a-Si TFT Gate Driver

  • Choi, Woo-Seok;Kim, Hae-Yeol;Cho, Hyung-Nyuck;Ryu, Chang-Il;Yoon, Soo-Young;Jang, Yong-Ho;Park, Kwon-Shik;Kim, Binn;Choi, Seung-Chan;Cho, Nam-Wook;Moon, Tae-Woong;Kim, Chang-Dong;Kang, In-Byeong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.583-586
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    • 2009
  • A 14.1" XGA (1024${\times}$768) LCD panel with Integrated Black Data Insertion (IBDI) has been world first developed successfully based on the integrated amorphous Silicon TFT gate driver which we previously introduced. The notable features compared with the conventional integrated a-Si TFT gate driver circuit are that the circuit consists of Dual buffer, Carry buffer structure, and Q-node cross charging for stable signal scanning characteristic and prevention of coupling between signal lines.

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Development of the Printed Top Gate Organic Thin Film Transistor (OTFT)

  • Kang, H.S.;Kang, H.C.;Lee, M.H.;Park, S.Y.;Kim, M.J.;Heo, J.S.;Kim, D.W.;Noh, Y.H.;Lee, S.;Kim, J.Y.;Kim, C.D.;Kang, I.B.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.113-116
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    • 2008
  • The active layer thickness and curing condition dependent performance of an organic thin film transistor (OTFT) with inkjetted organic semiconductor (OSC) layer is studied The best performance of the OTFT was found when the thickness of ose was ~120 nm cured at $60^{\circ}C$. The performance enhancement of the OTFT with inkjetted OSC layer was discussed by comparing the OTFT with spin-coated ose layer.

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Field Emission-Back Light Unit Fabricated Using Carbon Nanotube Emitter

  • Kim, H.S.;Lee, J.W.;Lee, S.K.;Lee, C.S.;Jung, K.W.;Lim, J.H.;Moon, J.W.;Hwang, M.I.;Kim, I.H.;Kim, Y.H.;Lee, B.G.;Choi, Y.C.;Seon, H.R.;Lee, S.J.;Park, J.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.277-280
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    • 2007
  • Field emission-back light unit (FE-BLU) was fabricated using carbon nanotube (CNT) emitter. Local dimming and local brightening techniques were achieved, which results in very high contrast ratio. In addition, the motion blur phenomenon, one of the serious problems of liquid crystal display (LCD) with cold cathode fluorescent lamp (CCFL)-BLU, was removed from LCD-TV by using FE-BLU.

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Development of 40 inch Full Color AMOLED Display

  • Chung, K.;Huh, J.M.;Sung, U.C.;Chai, C.C.;Lee, J.H.;Kim, H.;Lee, S.P.;Goh, J.C.;Park, S.K.;Ko, C.S.;Koh, B.S.;Shin, K.J.;Choi, J.H.;Jung, J.H.;Kim, N.D.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.781-784
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    • 2005
  • We have developed technology to fabricate large-size active matrix organic light-emitting diode (AMOLED) displays with good color purity. Using these innovations, we have developed a 40inch diagonal WXGA AMOLED full color display. Because the TFT circuitry occupies a large portion of the pixel structure, an efficient white emission OLED is essential to integrate the device onto the active matrix backplane. The development of these technologies enables OLED displays to fulfill the requirements for larger size applications such as HDTVs

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