• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.2
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• pp.12-21
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• 1974

Perturbation thorpe for quantum mechanics is extended to the derivation of a power equation for microwave propagation in a rectangular waveguiad filled with N-type silicon which is transversely magnetized. This approximation evolves in a unified manner from the eigenvalue formulation of maxwell's equation wherein the wave numbers are tthe eigenvalues of a linear operator. TE10 wave at 9.61GHz is employed for the experimental investigation of the microwave propagation through a transversely magnetized semiconductor. Results from first order perturbation agree well with the experiment where the bridge method using two Magic Tees is employed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.9
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• pp.43-49
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• 1997

The dependence of the electrical properties in planar MQW - APD & pn, and p - i - n photodiode implanted with oxygen on the annealing emperatures and ion dose has been investigated. The oxygen implantation was performed for inter-device isolation. The leakage current of as-impanted p-i-n photodiode obtained was less than 50 nA. An annelaing temperature dependence study shows an abrupt increase of leakge current at 600.deg.C for all devices under study. This indicates that donor complex centers introduced by the chemical activity of oxygen increase with increasing annelaing temperatures. Furthermore, leakage current was highly correlated with oxygen dose due to th eimplanted related defects.

• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.26-27
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• 2004

We present the first demonstration of the vertical-injection depleted optical thyristor laster diode with InGaAs/InGaAsP multiple quantum well structure. The measured switching voltage and current are 3.36 V and 10 A respectively. The holding voltage and current are respectively 1.37 V, 100 A. The lasing threshold current is 131 mA at 25 C. The output peak wavelength is at 1578 nm at a bias current equal to 1.22 times threshold.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.282-283
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• 2000

본 연구에서는 사용한 양자 우물 구조는 그림 1과 같이 각 양자 우물의 두께가 다르게 분포되어 있다. 이러한 불균일 양자 우물 구조는 주로 광대역폭 반도체 광 증폭기를 위한 구조,$^{l).2)}$ 광대역폭 superluminescent diodes에 적용하기 위한 구조,$^{3)}$ 광대역폭 및 온도 비의존성 면발광 레이저를 위한 구조로 이용되고 있다.$^{4)}$ 이들 소자의 실현을 위해 우선 불균일 양자 우물 구조의 특성을 알아볼 필요가 있다. 따라서 본 연구에서는 이 구조를 CBE로 성장하고 릿지형 반도체 레이저를 제작하여 광학적 특성을 조사하였다. (중략)

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.237-238
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• 2007

A new strain analysis model, so called the stress matched model, in an epitaxial multilayer system is proposed. The model makes it possible to know the strain, the stress, the elastic strain energy in each epitaxial layer. Analytical formulas of strain parameters in each epitaxial layer are derived under assumptions that the substrate thickness is finite and the in-plane lattice constant is the same for all epitaxial layers for dislocation free growth. As an example, the model is applied to a 405nm InGaN/InGaN multiple quantum well laser diode. Analysis result shows that AlxGa1-xN layer with Al mole fraction of 0.06 and the thickness of 6${\mu}m$ is one of good templates for a laser. In fact, this layer structure coincides with experimentally optimized one.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.121-121
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• 1999

Gallium nitride (GaN) semiconductor is intensively under investigation for commercialization of short wavelength light emitting devices and laser diodes. One of serious obstacles to overcome is to reduce the defect density in GaN film grown by various techniques such as MOCVD, HVPE, etc. Many research groups including SAIT are trying to improve the defect density to 106-107/cm2 from the level of 108-1010/cm2. We have investigated epitaxial growth behaviour of GaN thin and thick films under hidride vapour phase epitaxy (HVPE) condition. In this report, we present the microstructural and crystallographical characteristics of the GaN films grown on sapphire (0001) substrate which were studied by both conventional and high-resolution transmission electron microscopy (TEM). Also we present some microscopic analysis results obtained from GaN films grown by ELO(dpitzsial lateral overgrowth)-HVPE and from GaN quantum well structures grown by MOCVD. Another serious problem in growing GaN thick film by HVPE is internal micro-cracks. We also comment the origin of the micro-crack.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.177-177
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• 1999

The surface structure of epitaxial $\alpha$-Fe2O3(0001) grown on $\alpha$-Al2O3(0001) has been investigated using intermediate-energy x-ray photoelectron diffraction. Comparison of experiment with quantum mechanical scattering theory reveals that the surface is Fe-terminated, and that the first four layer spacings are -41%, +18%, -8%, and +47% of the associated bulk values, respectively. these results agree reasonably well with the predictions of molecular mechanics and spin-density functional theory previously reported in the literature for the Fe-terminated surface. however, we find no evidence for and O-terminated surface predicted to be stable by spin-density functional theory.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.148-148
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• 2006

• Progress in Superconductivity and Cryogenics
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• v.4 no.1
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• pp.50-54
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• 2002

Penetration depth of Nb electrodes in $Nb/A1O_x/Nb$ Josephson junctions has been measured by resistive method. For a given applied field, the total flux through the junction is temperature dependent because the penetration depth of Nb electrode varies with temperature. If the total flux equals an integral multiple of the flux quantum at certain temperatures, resistive peaks appear at those temperatures. The penetration depth of Nb can be determined by applying the above condition, The temperature dependence of penetration depth was found to be well described by the two-fluid model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.96-99
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• 2003

본 논문에서는 수치 해석 방법을 이용하여 $In_{x}Ga_{1-x}N/GaN$ (x=0.06~0.1) 양자우물 구조의 에너지 준위를 계산하였다. InGaN 벌크 샘플(bulk sample)의 PL(photoluminescence) 데이터로부터 bowing factor를 결정한 후 InGaN의 유효 에너지 밴드갭을 계산하였고, InGaN/GaN 양자우물 구조의 전도대와 가전자대의 오프셋(offset)을 0.67/0.33으로 정하였다. 다음으로, 양자화 효과에 의한 에너지 변위와 압전장(piezoelectric field)을 제외한 양축 압축 변형(biaxial compressive strain)에 의한 에너지 변위를 고려하여 기저준위 전자와 heavy hole(le-1hh)간의 천이 에너지를 계산하였다. 계산된 천이 에너지는 PL로 측정한 천이 에너지에 비해 약 9~15 meV 크게 관찰되었는데, 이것은 InGaN/GaN 양자우물 계면에 발생하는 압전장 때문인 것으로 생각된다.