• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.25-28
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• 2000

The InAs self-assembled quantun dots (SAQDS) were grown on a GaAs(100) substrate using a molecular beam epitaxy (MBE) technique. The InAs QDs were multi-stacked to have various layer structures of 1, 3, 6, 10, 15 and 20 layers, where the thickness of the GaAs spacer and InAs QD layer were 20 monolayers (MLs) and 2 MLs, respectively. The nanostructured feature was characterized by photoluminescence (PL) and scanning transmission electron microscopy (STEM). It was found that the highest PL intensity was obtained from the specimen with 6 stacking layers and the energy of the PL peak was split with increasing the number of stacking layers. The STEM investigation exhibited that the quantum dots in the 6 stacking layer structure were well aligned in vertical columns without any deflect generation, whereas the volcano-like deflects were formed vertically along the growth direction over 10 periods of InAs stacking layers.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.390-395
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• 2007

We systematically investigated the effects of InAs coverage variation, two-step annealing and an asymmetric InGaAs quantum well (QW) on the structural and optical characteristics of InAs quantum dots (QDs) by using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) measurement. The transition of size distribution of InAs QDs from bimodal to multi-modal was noticeably observed with increasing InAs coverage. By means of two-step annealing, it is found that significant narrowing of the luminescence linewidth (from 132 to 31 meV) from the InAs QDs occurs together with about 150 meV blueshift, compared to as-grown InAs QDs. Finally, the InAs QDs emitting at longer wavelength of $1.3\;{\mu}m$ with narrow linewidth were grown by an asymmetric InGaAs QW. The excited-state transition for the InAs QDs with an asymmetric InGaAs QW was not noticeably observed due to the large energy-level spacing between the ground states and the first excited states. The InAs QDs with an asymmetric InGaAs QW will be promising for the device applications such as $1.3\;{\mu}m$ optical-fiber communication.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.1
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• pp.11-16
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• 2014

The effects of environment and microstructure on low cycle fatigue (LCF) behaviors of CF8M stainless steels containing 11% of ferrites were investigated in a $310^{\circ}C$ deoxygenated water environment. The reduction of LCF life of CF8M in a $310^{\circ}C$ deoxygenated water was smaller than 316LN stainless steels. Based on the microstructure and fatigue surface analyses, it was confirmed that the hydrogen induced cracking contributed to the reduction in LCF life for CF8M as well as for 316LN. However, many secondary cracks were found on the boundaries of ferrite phases in CF8M, which effectively reduced the stress concentration at the crack tip. Because of the reduced stress concentration, the accelerated fatigue crack growth by hydrogen induced cracking was less significant, which resulted in the smaller environmental effects for CF8M than 316LN in a $310^{\circ}C$ deoxygenated water.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.273-273
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• 2014

Quantum-dot sensitized solar cells (QDSCs) are an emerging class of solar cells owing to their easy fabrication, low cost and material diversity. Despite of the fact that the maximum conversion efficiency of QDSCs is still far less than that of Dye-Sensitized Solar Cells (>12 %), their unique characteristics like Multiple Exciton Generation (MEG), energy band tune-ability and tendency to incorporate multiple co-sensitizers concurrently has made QDs a suitable alternative to expensive dyes for solar cell application. Lead Sulfide (PbS) Quantum dot sensitized solar cells are theoretically proficient enough to have a photo-current density ($J_{sc}$) of $36mA/cm^2$, but practically there are very few reports on photocurrent enhancement in PbS QDSCs. Recently, $Hg^{2+}$ incorporated PbS quantumdots and Cadmium Sulfide (CdS) co-sensitized PbS solarcells are reported to show an improvement in photo-current density ($J_{sc}$). In this study, we explored the efficacy of $In_2S_3$ as an interfacial layer deposited through SILAR process for PbS QDSCs. $In_2S_3$ was chosen as the interfacial layer in order to avoid the usage of hazardous CdS or Mercury (Hg). Herein, the deposition of $In_2S_3$ interfacial layer on $TiO_2$ prior to PbS QDs exhibited a direct enhancement in the photo-current (Isc). Improved photo-absorption as well as interfacial recombination barrier caused by $In_2S_3$ deposition increased the photo-current density ($J_{sc}$) from $13mA/cm^2$ to $15.5mA/cm^2$ for single cycle of $In_2S_3$ deposition. Increase in the number of cycles of $In_2S_3$ deposition was found to deteriorate the photocurrent, however it increased $V_{oc}$ of the device which reached to an optimum value of 2.25% Photo-conversion Efficiency (PCE) for 2 cycles of $In_2S_3$ deposition. Effect of Heat Treatment, Normalized Current Stability, Open Circuit Voltage Decay and Dark IV Characteristics were further measured to reveal the characteristics of device.

• Horticultural Science & Technology
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• v.19 no.2
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• pp.149-152
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• 2001

Leaf chlorophyll fluorescence capable to estimate $CO_2$ assimilation was compared among three citrus rookstocks: trifoliate orange (Poncitrus trifoliate L.), 'Flying Dragon' (Poncitrus trifoliate L. var. monstrosa) and citromelo (Poncitrus trifoliate L.${\times}$Citrus paradisi), as well as among satsuma mandarin (Citrus unshiu cv. Nichinan No.1) grafted on the 3 rootstocks. Citromelo, the most vigorous rootstock; and 'trifoliate orange'; the most common cultivar and moderate rootstocks gave the same potential and actual quantum yields, whereas 'Flying Dragon' (very dwarf) had lower values due to a higher Fo and Fs for fluorescence obtained from dark-adapted and light-adapted leaves, respectively. These findings show that the absorbed photon energy was dissipated more as fluorescence from the antena chlorophyll in 'Flying Dragon' than trifoliate orange or 'swingle' citrimelo. The satsuma mandarins grafted on these rootstocks did not, however, show the differences observed in the rootstocks by having all the same potential and actual quantum yields. It is suggested that the rootsocks do not potentially or actually electron transport in the Photosystem II (PS II) of satsuma mandarin grafted on the 3 rootstocks.

• Applied Chemistry for Engineering
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• v.22 no.3
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• pp.328-331
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• 2011

ZnSe quantum dots (QDs) were prepared by employing water-containing Dioctyl sodium sulfosuccinate (AOT) reversed micelles (microemulsions) and the silica-encapsulated ZnSe QDs were obtained by a direct injection of tetraethyl orthosilicate (TEOS) into the microemulsion system. When the QDs were coated by silica, well-defined spherical shapes were formed and the average size of the QDs was near 7 nm. In addition, the photoluminescence (PL) efficiency of the QDs was reduced from 8.0 to 1.1% as they were encapsulated by silica. However, the solid layers of the silica-encapsulated ZnSe QDs on gold surfaces showed the excellent photostability. In particular, they are cadmium free and thus, less toxic. Moreover, the present method does not require a hot reaction temperature or extremely toxic H2Se gas as a Se precursor. Accordingly, the method can be a safer and more economical process for producing silica-encapsulated ZnSe QDs, which may be a potential media for biosensors.

• Proceedings of the Korean Magnestics Society Conference
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• 2006.06a
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• pp.32-33
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• 2006

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.208.1-208.1
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• 2007

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.66-71
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• 1998

Discretization method and numerical calculations of wigner function to introduce the influence of spatially varying effective mass as well as to reduce the error involved in the conventional discretization model are presented. Using this new discrete model, the transient responses of resonant-tunneling-diode are analyzed.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.161-161
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• 2009