• Proceedings of the Optical Society of Korea Conference
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• 1998.08a
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• pp.238-239
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• 1998

• Proceedings of the Optical Society of Korea Conference
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• 2001.08a
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• pp.278-279
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• 2001

• Proceedings of the Optical Society of Korea Conference
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• 2001.08a
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• pp.302-303
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• 2001

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.264-265
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• 2002

• Journal of Korean Vacuum Science & Technology
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• v.4 no.2
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• pp.41-43
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• 2000

We present a study of exciton relaxation in GaAs/AIGaAs quantum well structures by using time-resolved photoluminescence techniques.03 observed that light-hole exciton has a longer decay time than heavy-hole exciton, which results from the difference of the exciton population factor. We considered the thermal population time to explain the observed exciton dynamics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.82-91
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• 1991

Molecular beam epitaxial growth of GaAs on Si substrate and the results on its analysis are reported. Epitaxy was performed on two different types of the substrate under various grwth conditions, and was analyzed by scanning and transmission electron microscopes, X-ray diffractometer, photoluminescence and Hall measurements. GaAs epitaxial layer has better crystalline quality when it was grown on a tilt-cut substrate. The stress seems to be releaxed more easily when multi-quantum well was introduced in the buffer layer. The epilayer was doped unintentionally with Si during growth due to the diffusion of the substrate. Also observed is that the quantum efficiency of excitonic radiative recombination of the heteroepitaxy is not as good as that of the homoepitaxy in the same doping level.

• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.266-271
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• 1996

In this study the evaluation of RWG MQW-LD fabricated with our vertical LPE system has been carried out with measuring its optical characteristics. This laser diode operated in lateral single mode as designed, and it showed 77% of internal quantum efficiency, 18cm of internal loss and 5.5$\AA$/$^{\circ}C$ of the thermal characterictic of the lasing wavelength. From these results we conclude that the vertical LPE system are fairly good and it might he useful to fabricate MQW wafer for laser diode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.89-93
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• 2004

Piezoelectric fields built in I $n_{x}$G $a_1$$_{-x}$N/GaN (x=0.06∼0.1) quantum wells (QWs) have been estimated by comparing the transition energies, both calculated and measured by photoluminescence (PL). The calculation was numerically carried out with a rectangular QW model, where the effective bandgap considering a bowing facto, energy levels quantized for the lowest lying electrons and heavy holes (1e-lhh), and biaxial compressive strain were included except for the piezoelectric fields. The calculated values were observed to be larger (9∼15 meV) than the measured values by PL, which was considered to be caused by the piezoelectric fields built in InGaN/GaN QW interface. In addition, we observed the energy shift by measuring the EPDPL (excitation power-dependent PL), which was compared with the energy difference caused by the piezoelectric fields.

• Proceedings of the KIPE Conference
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• 2012.11a
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• pp.31-32
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• 2012

This paper presents a new design of magnetic bearing structure for application in Nuclear Power Plant (NPP). The proposed design includes so-called saturated coils which is used to generate the bias flux for bearing almost the whole mass of the rotor, and so-called linear auxiliary coil controlled to stabilize the suspension. The saturated coil is considered as an special electromagnet which is controlled to operate in the region of magnetic saturation in order to minimize the bias current as well as to enhance the magnetic flux density. This strategy will result in a very compact size of magnetic bearing as well as increasing the speed of the response of the current controller. The novel structure is expected to be applied to design very high power gas turbine generator of next generation of fast reactor in which the mass of rotor can reach 50 tons. The total power of the NPP can reach 2,000 MW. Moreover, the issue of arc occurrence between coils is also discussed and two solutions are proposed.

• Journal of the Optical Society of Korea
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• v.11 no.3
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• pp.138-141
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• 2007

We suggest that supercontinuum can be used for absorption spectroscopy to observe the exciton levels of a semiconductor nano-structure. Exciton absorption spectrum of a GaAs/AlGaAs quantum well was observed using supercontinuum generated by a microstructrured fiber pumped by a femtosecond (fs) pulsed laser. Significantly narrower peaks were observed in the absorption spectrum from 11 K up to room temperature than photoluminescence (PL) spectrum peaks. Because supercontinuum is coherent light and can readily provide high enough intensity, this method can provide a coherent ultra-broad band light source to identify exciton levels in semiconductors, and be applicable to coherent nonlinear spectroscopy such as electromagnetically induced transparency (EIT), lasing without inversion (LWI) and coherent photon control in semiconductor quantum structures.