• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2233-2236
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• 2011

We evaluate quantum-mechanical velocity autocorrelation functions from classical molecular dynamics simulations using quantum correction approaches. We apply recently developed approaches to supercritical argon and liquid neon. The results show that the methods provide a solution more efficient than previous methods to investigate quantum-mechanical dynamic behavior in condensed phases. Our numerical results are found to be in excellent agreement with the previous quantum-mechanical results.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.447-447
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• 2011

We studied to detect the mass variation using micro mechanical resonator. For measuring the resonance frequency of the micro mechanical system, optical method using laser interference is selected. A simple resonator is prepared by attaching an AFM cantilever on the piezo stack. The piezo stack makes a the cantilever vibrated with its resonance frequency. To change the mass of the resonator, gold was evaporated on the cantilever. We measured how much resonance frequency was changed according to the amount of gold attached on cantilever. This resonator is able to perform the role of a mass sensor and has a resolution of the order of micrograms. The fabrication of the resonator and measurement setup for detecting the mechanical resonance will be introduced in this presentation.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.775-778
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• 2003

In this paper, we report our quantum mechanical approach for the analysis of FinFET in a self-consistent manner. The simulation results are carefully investigated for FinFET with an electrical channel length(Leff) of 30nm and with a fin thickness(Tsi) of 10～35nm. We also demonstrated the differences in the simulations for the classical and quantum-mechanical simulation approaches, respectively. These simulation results also imply that it is necessary to solve the coupled Poisson and Schrodinger equations in a self-consistent manner for analyzing the sub-30nm MOSFETS including FinFET.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.361.1-361.1
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• 2016

Due to their high sensitivity, fast response, small energy consumption and ease of integration, nanoelectromechanical systems (NEMS) have attracted much interest in various applications such as high speed memory devices, energy harvesting devices, frequency tunable RF receivers, and ultra sensitive mass sensors. Since the device performance of NEMS is closely related with the mechanical and flexural properties of the material in NEMS, analysis of the mechanical and flexural properties such as intrinsic tensile stress and Young's modulus is a crucial factor for designing the NEMS structures. In the present work, the intrinsic mechanical properties of highly stressed silicon nitride (SiN) beams are investigated as a function of the beam length using two different techniques: (i) dynamic flexural measurement using optical interferometry and (ii) quasi-static flexural measurement using atomic force microscopy. The reliability of the results is analysed by comparing the results from the two different measurement techniques. In addition, the mass density, Young's modulus and internal stress of the SiN beams are estimated by combining the techniques, and the prospect of SiN based NEMS for application in high sensitive mass sensors is discussed.

• Proceedings of the Korean Nuclear Society Conference
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• 2002.05a
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• pp.115-115
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• 2002

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.19-23
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• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square-and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.92-92
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• 2010

Replacing the existing illumination with solid-state lighting devices, such as light-emitting diodes (LEDs) are expected to reduce energy consumption and environmental pollution as they provide better efficiency and longer lifetimes. Currently, white light emitting diodes are composed of UV or blue LED with down-converting materials such as highly luminescent phosphors White light-emitting diodes (LED) were fabricated with multi-shell nanocrystal quantum dots for enhanced luminance and improved stability over time. Multi-shell quantum dots (QDs) were synthesized through one pot process by using the Successive Ionic Layer Adsorption and Reaction (SILAR) method. As prepared, the multi-shell QD has cubic lattice of zinc-blend structure with semi-spherical shape with quantum yield of higher than 60 % in solution. Further, highly fluorescent multi-shell QD was deposited on the blue LED, which resulted in QD-based white LED with high luminance with excellent color rendering properties.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.87-96
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• 2021

Quantum computers will be a game-changer in various fields, such as cryptography and new materials. Quantum computer is quite different from the classical computer by using quantum-mechanical phenomena, such as superposition, entanglement, and interference. The main components of a quantum computer can be divided into quantum-algorithm, quantum-classical control interface, and quantum processor. Universal quantum computing, which can be applied in various industries, is expected to have more than millions of qubits with high enough gate accuracy. Currently, It uses general-purpose electronic equipment, which is placed in a rack, at room temperature to make electronic signals that control qubits. However, implementing a universal quantum computer with a low error rate requires a lot of qubits demands the change of the current control system to be an integrated and miniaturized system that can be operated at low temperatures. In this study, we explore the fundamental units of the control system, describe the problems and alternatives of the current control system, and discuss a future quantum control system.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.240.2-240.2
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• 2013

The device scale of flash memory was confronted with quantum mechanical limitation. The next generation memory device will be required a break-through for the device scaling problem. Especially, graphene is one of important materials to overcome scaling and operation problem for the memory device, because ofthe high carrier mobility, the mechanicalflexibility, the one atomic layer thick and versatile chemistry. We demonstrate the hybrid memory consisted with the metal-oxide quantum dots and the mono-layered graphene which was transferred to $SiO_2$ (5 nm)/Si substrate. The 5-nm thick secondary $SiO_2$ layer was deposited on the mono-layered graphene by using ultra-high vacuum sputtering system which base pressure is about $1{\times}10^{-10}$ Torr. The $In_2O_3$ quantum dots were distributed on the secondary $SiO_2$2 layer after chemical reaction between deposited In layer and polyamic acid layer through soft baking at $125^{\circ}C$ for 30 min and curing process at $400^{\circ}C$ for 1 hr by using the furnace in $N_2$ ambient. The memory devices with the $In_2O_3$ quantum dots on graphene monolayer between $SiO_2$ thin films have demonstrated and evaluated for the application of next generation nonvolatile memory device. We will discuss the electrical properties to understating memory effect related with quantum mechanical transport between the $In_2O_3$ quantum dots and the Fermi level of graphene layer.

• Proceedings of the Korean Nuclear Society Conference
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• 2005.10a
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• pp.993-994
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• 2005