• Journal of Advanced Navigation Technology
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• v.18 no.2
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• pp.178-184
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• 2014

CMOS technology based on PCA is very efficient at an implementation of memory or ALU. However, there has been a growing interest in quantum-dot cellular automata (QCA) because of the limitation of CMOS scaling. In this paper, we propose a design of PCA architecture based on QCA. In the proposed PCA design, we utilize D flip-flop and XOR logic gate without wire crossing technique, and design a input and rule control switches. In experiment, we perform the simulation of the proposed PCA architecture by QCADesigner. As the result, we confirm the efficiency the proposed architecture.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.440-440
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• 2009

Semiconductor nanowires offer exciting possibilities as components of solar cells and have already found applications as active elements in organic, dye-sensitized, quantum-dot sensitized, liquid-junction, and inorganic solid-state devices. Among many semiconductors, silicon is by far the dominant material used for worldwide photovoltaic energy conversion and solar cell manufacture. For silicon wire to be used for solar device, well aligned wire arrays need to be fabricated vertically or horizontally. Macroscopic silicon wire arrays suitable for photovoltaic applications have been commonly grown by the vapor-liquid-solid (VLS) process using metal catalysts such as Au, Ni, Pt, Cu. In the case, the impurity issues inside wire originated from metal catalyst are inevitable, leading to lowering the efficiency of solar cell. To escape from the problem, the wires of purity of wafer are the best for high efficiency of photovoltaic device. The fabrication of wire arrays by the electrochemical etching of silicon wafer with photolithography can solve the contamination of metal catalyst. In this presentation, we introduce silicon wire arrays by electrochemical etching method and then fabrication methods of radial p-n junction wire array solar cell and the various merits compared with conventional silicon solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.264-265
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• 2000

1차원 반도체 구조인 양자 줄(Quantum Wire)은 새로운 물리 현상의 가능성을 보여줄 것으로 기대된다.$^{(1)(2)}$ 이 구조에서 운반자는 2차원 퍼텐셜에 가두어지므로 1차원 퍼텐셜인 양자 우물에 갇힌 운반자 보다 더 많이 양자화가 이루어져 이 운반자의 상태 에너지는 더 쪼개지며, 양자 줄의 상태 밀도는 에너지 준위에 대해 계단 함수가 아닌 변형된 Dirac $\delta$ 함수꼴을 가진다.$^{(3)}$ 그러나, 1차원 반도체 구조인 양자 줄이 나노(nano) 크기 내에서 만들어져야 하므로, 잘 정의된 양자 줄을 만드는 일은 기술상 매우 어려운 일이다. 양자 우물 구조에서 운반자는 결정을 키우는 방향을 따라 나노 크기의 활성 영역 안에 가두어지게 된다. 양자 줄 구조에서의 운반자는 결정 성장 방향뿐만 아니라 수직인 한 방향에서 각각 나노 크기를 갖는 활성 영역에 가두어져야 한다. 여기에서, 결정 성장 방향과 수직으로 활성 영역을 정의하는 것은, 결정 성장 방향과 평행하게 활성 영역을 정의하는 것보다 어려운 일이다. (중략)

• Bulletin of the Korean Chemical Society
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• v.29 no.1
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• pp.197-201
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• 2008

Conformational heterogeneity of directly linked multiporphyrin arrays with larger molecular length retards their utilities in practical applications such as two-photon absorption and molecular photonic wire. In this regard, here we adopted a way to overcome the conformational heterogeneity through hydrogen bonding by selective binding of meso aryl substituents of porphyrins (host) with urea (guest) to form helical structure. Using steady-state and time-resolved spectroscopy, we observed the enhanced fluorescence quantum yield by ~1.8 to 2.4 times, enhanced anisotropy values and the disappearance of fast fluorescence decay component in the host-guest helical forms. In addition, the enhanced nonlinear optical responses of helical arrays infer the extended inter-porphyrin electronic coupling due to a significant change in dihedral angle between the neighboring porphyrin moieties. The current host-guest strategy will provide a guideline to improve the structural homogeneity of the photonic wire.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.06a
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• pp.21-21
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• 1998

• The Transactions of the Korean Institute of Power Electronics
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• v.21 no.4
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• pp.296-301
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• 2016

Using high magnetic flux from a 60 Hz high-current cable, a 2 W wireless-powered energy harvesting receiver for sensor operation, internet of things (IoT) devices, and LED lights inside electrical cable tunnels is proposed. The proposed receiver comprises a copper coil with a high number of turns, a ring-shaped ferromagnetic core, a capacitor for compensating for the impedance of the coil in series, and a rectifier with various types of loads, such as sensors, IoT devices, and LEDs. To achieve safe and easy installation around the power cable, the proposed ring-shaped receiver is designed to easily open or close using a clothespin-shaped handle, which is made of highly-insulated plastic. Laminated silicon steel plates are assembled and used as the core because of their mechanical robustness and high saturation flux density characteristic, in which the thickness of each isolated plate is 0.3 mm. The series-connected resonant capacitor, which is appropriate for low-voltage applications, is used together with the proposed receiver coil. The concept of the figure of merit, which is the product weight and cost of both the silicon steel plate and the copper wire, is used for an optimized design; therefore, the weight of the fabricated receiver and the price of raw material is 750 gf and USD $2 each, respectively. The 2.2 W powering capability of the fabricated receiver was experimentally verified with a power cable current of $100A_{rms}$ at 60Hz.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.114-119
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• 1996

The use of holographic interference lithography and removal techniques to corrugate GaAs substrate have been studied. The periodic photoresist structure, which serves as a protective mask during etching, is holographically prepared. Subsequently periodic V-grooved pattern is formed on the GaAs substrate by conventional a H$_{2}$SO$_{4}$-H$_{2}$O$_{2}$-H$_{2}$O wet etching. The linewidth of a GaAs pattern is about 0.4$\mu$m and the depth is 0.5$\mu$m A quantum wires(QWRs) array is well formed on the V-grooved substrate by MOCVD (metalorganic chemical vapor deposition) growth of GaAs/Al$_{0.5}$Ga$_{0.5}$As (50$\AA$/300$\AA$) quantum wells. The formation of QWR array is confirmed by the temperature dependent photoluminescence (PL) measurement. The intensive PL peak with a FWHM of 6meV at 21K shows the high quality of the QWR array.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.11
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• pp.788-794
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• 2020

This study was measured and analyzed from January to November 2019 to confirm the effect that Abietic acid, an asthma-causing substance, which can be exposed to workers in the electronics industry, is removed by plasma treatment. The experiment was carried out using a solder wire and natural rosin. Air at temperatures of 250℃, 300℃, and 350℃ was collected with a glass fiber filter paper using an air sampler for 10 minutes at a flow rate of 2ℓ/min. An analysis of the collected samples was performed by pretreatment with methyl alcohol and quantitative analysis by high performance liquid chromatography (HPLC). This procedure confirmed that abietic acid was generated in both natural rosin and solder wires, and the quantum of abietic acid increased as the treatment temperature increased. The amount of abietic acid was higher in natural rosin than solder wire. As a result of plasma treatment, a removal efficiency of about 92% or more was confirmed in natural rosin. A peak of abietic acid was not detected in the solder wire. Therefore, a removal efficiency of 100% was confirmed. This study, confirmed that abietic acid, an asthma-trigger can be generated in solder wire and natural rosin, and can be removed by plasma treatment.