• Title/Summary/Keyword: Quantum Dot Nanocrystals

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Effect of thiophenol-based ligands on photoluminescence of quantum dot nanocrystals

  • Moon, Hyungseok;Jin, Hoseok;Kim, Bokyoung;Kang, Hyunjin;Kim, Daekyoung;Chae, Heeyeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.197-197
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    • 2016
  • Quantum dot nanocrystals(QDs) have been emerged as next generation materials in the field of energy harvesting, sensor, and light emitting because of their compatibility with solution process and controllable energy band gap. Especially, characteristics of color tuning and color purity make it possible for QDs to be used photoluminescence materials. Photoluminescence devices with QDs have been researched for a long time. Photoluminescence quantum yield(PL QY) is important factor that defines the performance of Photoluminescence devices. One of the ways to achieve better PL QY is ligand modification. If ligands are changed to proper electron donating group, electrons can be confined in the core which results in enhancement of PL QY. Because of the reason, short ligands are preferred for enhancing PL QY. Thiophenol-based ligands are shorter than typical alkyl chain ligands. In this study, the effect of thiophenol-based ligands with different functional groups are investigated. Four different types of thiophenol-based organic materials are used as organic capping ligand. QDs with bare thiophenol and fluorothiophenol show better quantum yield compared to oleic acid.

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Controlling Quantum Confinement and Magnetic Doping of Cesium Lead Halide Perovskite Nanocrystals

  • Dong, Yitong;Parobek, David;Son, Dong Hee
    • Journal of the Korean Ceramic Society
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    • v.55 no.6
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    • pp.515-526
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    • 2018
  • Cesium lead halide ($CsPbX_3$) nanocrystals have emerged as a new family of semiconductor nanomaterials that can outperform existing semiconductor nanocrystals owing to their superb optical and charge transport properties. Although these materials are expected to have many superior properties, control of the quantum confinement and isoelectronic magnetic doping, which can greatly enhance their optical, electronic, and magnetic properties, has faced significant challenges. These obstacles have hindered full utilization of the benefits that can be obtained by using $CsPbX_3$ nanocrystals exhibiting strong quantum confinement or coupling between exciton and magnetic dopants, which have been extensively explored in many other semiconductor quantum dots. Here, we review progress made during the past several years in tackling the issues of introducing controllable quantum confinement and doping of $Mn^{2+}$ ions as the prototypical magnetic dopant in colloidal $CsPbX_3$ nanocrystals.

Improved Luminescent Characterization and Synthesis of InP/ZnS Quantum Dot with High-Stability Precursor (고 안정성 전구체를 사용한 InP/ZnS 반도체 나노입자 합성 및 발광 특성 향상)

  • Lee, Eun-Jin;Moon, Jong-Woo;Kim, Yang-Do;Shin, Pyung-Woo;Kim, Young-Kuk
    • Journal of Powder Materials
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    • v.22 no.6
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    • pp.385-390
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    • 2015
  • We report a synthesis of non-toxic InP nanocrystals using non-pyrolytic precursors instead of pyrolytic and unstable tris(trimethylsilyl)phosphine, a popular precursor for synthesis of InP nanocrystals. In this study, InP nanocrystals are successfully synthesized using hexaethyl phosphorous triamide (HPT) and the synthesized InP nanocrystals showed a broad and weak photoluminescence (PL) spectrum. As synthesized InP nanocrystals are subjected to further surface modification process to enhance their stability and photoluminescence. Surface modification of InP nanocrystals is done at $230^{\circ}C$ using 1-dodecanethiol, zinc acetate and fatty acid as sources of ZnS shell. After surface modification, the synthesized InP/ZnS nanocrystals show intense PL spectra centered at the emission wavelength 612 nm through 633 nm. The synthesized InP/ZnS core/shell structure is confirmed with X-ray diffraction (XRD) and Inductively Coupled Plasma - Atomic Emission Spectrometer (ICP-AES). After surface modification, InP/ZnS nanocrystals having narrow particle size distribution are observed by Field Emission Transmission Electron Microscope (FE-TEM). In contrast to uncapped InP nanocrystals, InP/ZnS nanocrystals treated with a newly developed surface modified procedure show highly enhanced PL spectra with quantum yield of 47%.

Advances in Nanomaterials-Based Color Conversion Layer (나노물질 기반의 광변환층 개발 동향)

  • Kim, Dongryong;Choi, Moon Kee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.6
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    • pp.547-555
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    • 2022
  • Color conversion layer refers to a layer that converts the blue light emitted from the backlight into the red and green light. Heavy metal-free quantum dots and perovskite nanocrystals have attracted great attention as base materials for color conversion layers due to their outstanding optical characteristics. Here, we review recent advances in the development of color conversion layers based on quantum dots. First, we overview the representative optical characteristics of quantum dots and perovskite nanocrystals, and then introduce printing techniques for color converting layers including photolithography, inkjet printing, and nanoimprinting. Finally, we conclude this review with a brief perspective.

Synthesis of Ultra-small PbS Nanocrystal Quantum Dots for Energy Applications

  • Choe, Hye-Gyeong;Jeong, So-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.535-535
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    • 2012
  • We present a new synthetic route and characterization for ultra small sized PbS quantum dots in extreme quantum confinement with 1.5 to 2.9 nm in diameter. We obtained a series of nanocrystals with first absorption wavelength ranging from 580 to 820 nm (2.1-1.5 eV). To get this result, PbS quantum dots size is finely controlled by adjusting the growth temperature in the range of $70-95^{\circ}C$. We demonstrate that photoluminescence (PL) shows a red shift with respect to the first absorption peak that increases with decreasing PbS quantum dots size and ranges from about 500 to 125 meV as the mean PbS quantum dots diameter increases from 1.5 to 2.9 nm. We further created the assembled PbS quantum dot solids and investigated the transport properties for energy applications.

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Easy and Simple Synthesis of CdSe Nanocrystals: The Effect of Reaction Temperature for The Determination of Nanoparticle Size (간편한 CdSe 나노 입자의 합성: 입자크기를 결정하는 반응온도의 효과)

  • Kim, Sungjin
    • Journal of Integrative Natural Science
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    • v.2 no.3
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    • pp.219-223
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    • 2009
  • Easy and simple synthesis of CdSe nanocrystals was achieved through sol-gel process. CdSe nanocrystals were synthesized from the reaction of cadmium oxide and selenium in the prescence of trioctylphosphine oxide, tributylphosphine, octadecene, octadecylamine, and stearic acid. The effect of reaction temperature for the determination of size of CdSe nanocrystals was investigated after the addition of selenium. The reaction temperature for the growth of CdSe nanocrystals was increased by every $20^{\circ}C$ from 170 to 190, 210, 230, 250, 270, and $290^{\circ}C$. When the reaction temperature was higher, the absorption wavelength in the absorption spectrum was increased which indicated that the size of CdSe nanocrystals was increased. The emission wavelength in the photoluminescence spectrum was increased from 438 to 489, 542, 591, 643, 692, and 745 nm, as the size of CdSe nanocrystals was increased. The control of the reaction temperature illustrated that the color tuning of emission wavelength were successfully obtained.

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Dielectric and Optical Properties of InP Quantum Dot Thin Films

  • Mohapatra, Priyaranjan;Dung, Mai Xuan;Choi, Jin-Kyu;Oh, Jun-Ho;Jeong, Hyun-Dam
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.280-280
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    • 2010
  • Semiconductor quantum dots are of great interest for both fundamental research and industrial applications due to their unique size dependant properties. The most promising application of colloidal semiconductor nanocrystals (quantum dots or QDs) is probably as emitters in biomedical labeling, LEDs, lasers etc. As compared to II-VI quantum dots, III-V have attracted greater interest owing to their less ionic lattice, larger exciton diameters and reduced toxicity. Among the III-V semiconductor quantum dots, Indium Phosphide (InP) is a popular material due to its bulk band gap of 1.35 (eV) which is responsible for the photoluminescence emission wavelength ranging from blue to near infrared with change in size of QDs. Nevertheless, in recent years, the exact type of collective properties that arise when semiconductor quantum dots (QDs) are assembled into two- or three-dimensional arrays has drawn much interest. The term "uantum dot solids" is used to indicate three-dimensional assemblies of semiconductor QDs. The optoelectronic properties of the quantum dot solids are known to depend on the electronic structure of the individual quantum dot building blocks and on their electronic interactions. This paper reports an efficient and rapid method to produce highly luminescent and monodisperse quantum dots solution and solid through fabrication of InP thin films. By varying the molar concentration of Indium to Ligand, QDs of different size were prepared. The absorption and emission behaviors were also studied. Similar measurements were also performed on InP quantum dot solid by fabricating InP thin films. The optical properties of the thin films are measured at different curing temperatures which show a blue shift with increase in temperature. The dielectric properties of the thin films were also investigated by Capacitance-voltage(C-V) measurements in a metal-insulator-semiconductor (MIS) device.

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Enhanced UV-Light Emission in ZnO/ZnS Quantum Dot Nanocrystals (산화아연/황화아연 양자점 나노결정에서의 향상된 자외선 방출)

  • Kim, Ki-Eun;Kim, Woong;Sung, Yun-Mo
    • Korean Journal of Materials Research
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    • v.18 no.12
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    • pp.640-644
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    • 2008
  • ZnO/ZnS core/shell nanocrystals (${\sim}5-7\;nm$ in diameter) with a size close to the quantum confinement regime were successfully synthesized using polyol and thermolysis. X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) analyses reveal that they exist in a highly crystalline wurtzite structure. The ZnO/ZnS nanocrystals show significantly enhanced UV-light emission (${\sim}384\;nm$) due to effective surface passivation of the ZnO core, whereas the emission of green light (${\sim}550\;nm$) was almost negligible. They also showed slight photoluminescence (PL) red-shift, which is possibly due to further growth of the ZnO core and/or the extension of the electron wave function to the shell. The ZnO/ZnS core/shell nanocrystals demonstrate strong potential for use as low-cost UV-light emitting devices.

Photocurrent of CdSe nanocrystals on singlewalled carbon nanotube-field effect transistor

  • Jeong, Seung-Yol;Lim, Seung-Chu;Lee, Young-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03b
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    • pp.40-40
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    • 2010
  • CdSe nanocrystals (NCs) have been decorated on singlewalled carbon nanotubes (SWCNTs) by combining a method of chemically modified substrate along with gate-bias control. CdSe/ZnS core/shell quantum dots were negatively charged by adding mercaptoacetic acid (MAA). The silicon oxide substrate was decorated by octadecyltrichlorosilane (OTS) and converted to hydrophobic surface. The negatively charged CdSe NCs were adsorbed on the SWCNT surface by applying the negative gate bias. The selective adsorption of CdSe quantum dots on SWCNTs was confirmed by confocal laser scanning microscope. The measured photocurrent clearly demonstrates that CdSe NCs decorated SWCNT can be used for photodetector and solar cell that are operable over a wide range of wavelengths.

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Synthesis of InP Nanocrystal Quantum Dots Using P(SiMe2tbu)3

  • Jeong, So-Myeong;Kim, Yeong-Jo;Jeong, So-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.533-534
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    • 2012
  • Colloidal III-V semiconductor nanocrystal quantum dots (NQDs) have attracted attention as they can be applied in various areas such as LED, solar cell, biological imaging, and so on because they have decreased ionic lattices, lager exciton diameter, and reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals is limited by difficulties in control nucleation because the molecular bonds in III-V semiconductors are highly covalent compared to II-VI compounds. There is a need for a method that provides rapid and scalable production of highly quality nanoparticles. We present a new synthetic scheme for the preparation of InP nanocrystal quantum dots using new phosphorus precursor, P(SiMe2tbu)3. InP nanocrystals from 530nm to 600nm have been synthesized via the reaction of In(Ac)3 and new phosphorus precursor in noncoordinating solvent, ODE. This opens the way for the large-scale production of high quality Cd-free nanocrystal quantum dots.

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