• The Korean Journal of Nuclear Medicine Technology
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• v.19 no.2
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• pp.63-67
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• 2015

Purpose Among various causes that influence image quality degradation, various methods for decrease in Artifact occurred by respiration of patients are being used. Among them, this study intended to evaluate CTAC Shift correction method and additional scan compare to the Scan(Q static scan) using respiratory gated system. Materials and Methods This study was conducted on 10 patients, and used PET-CT Discovery 710 (GE Healthcare, MI, USA) and Varian's RPM system. 5.18 Mbq per kg of $^{18}F$-FDG was injected on patients, asked them to take a rest for 1 hour in the bed, and conducted test after urination. Images were visualized through Q static scan, CTAC Shift correction method, Additional scan based on the Whole body scan(WBS) with Artifact. Decrease in Artifact was compared in each image, conducted Gross Evalution, and measured changes of SUVmax. Results For image obtained through the CTAC Shift correction method through WBS with Artifact, 12~56%, Q static scan image showed 17~54% of change rate and Additional Scan showed -27~46% of change rate. In Blind Test, the CTAC Shift correction image showed the highest point with 4 points, Q static scan image showed 3.5 points, and Additional scan image showed 3.4 points. The standardized WBS scan through Oneway ANOVA and three types of Scan method showed significant difference(p<0.05), and did not show significant difference between the three Scan methods(p>0.05). However, the three Scan methods showed significant difference in Blind test. Conclusion Additional scan and Q static scan require more time than the CTAC Shift correction method, there is concern about excessive exposure to patients by CT rescan and Q static scan is difficult to apply on patients with inconsistent respiration or irregular respiration cycle due to pain. For CTAC Shift correction method, limited correction is possible and the range is limited as well. It is considered as a useful method of improving diagnostic value when hospitals use the system appropriately and develop various advantageous factors of each method.

• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.990-997
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• 1998

In this work, the $SiO_2$ films on the silicon substrate with different orientations were first prepared by the low temperature process using the ECR plasma diffusion as a function of microwave power and oxidation time. Before and after thermal treatment, the surface morphology, Si/O ratio from physicochemical properties, and the electrical properties of the oxide films were also investigated. The oxidation rate increased with microwave power, while surface morphology showed the nonuniform due to etching. The film quality, therefore, was lowered with increasing the defect by etching and the content of positive oxide ions in the oxide films from bulk by higher self-DC bias. The content of positive oxide ions in the oxide films with different Si orientations showed Si(100) < Si(111) < poly Si. The defects in $Si/SiO_2$ interface of $SiO_2$ film could be decreased by annealing, while $Q_{it}$ and $Q_f$ were independent of thermal treatment and the dependent on concentration of reactive oxide ions and self-DC bias of substrate. At microwave power of 300, and 400 W, the high quality $SiO_2$ film that had lower surface roughness and defect in $Si/SiO_2$ interface was obtained. The value of interface trap density, then, was ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.485-492
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• 2000

The sintering characteristics and the effects of density on dielectric properties in 0.2Ba(Mg$_{1}$3(Nb$_{2}$3/)O$_3$-0.8Ba(Mg$_{1}$3//Ta$_{2}$3/)O$_3$ceramics were investigated. The samples were made by the powder mixing techniques with the two step calcining conditions. When the 1st and the 2nd calcining temperatures were 120$0^{\circ}C$ and the sintering temperature was 155$0^{\circ}C$the density of samples showed the highest value (7.45 g/cm$^3$, 98.5% of theoretical density) among them. The dielectric constant of samples was nearly independent of density but the tan $\delta$ and the temperature coefficient of dielectric constant decreased linearly with increasing of the density. The quality factor(Q$\times$f), the temperature coefficient of resonance frequency and the dielectric constant of Ba[Mg$_{1}$3(Nb$_{0.2}$/Ta$_{0.8}$)sub 2/3/]O$_3$ceramic were 79,548 GHz, +1.5 ppm/$^{\circ}C$ and 26 in the microwave range, respectively.ely.