• Journal of Convergence for Information Technology
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• v.8 no.1
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• pp.215-225
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• 2018

The purpose of this is to understand critical roles of contact employees' organization citizenship behaviors (OCBs) in customers' evaluation of service quality. This paper examines the relationship of employees' OCBs with job satisfaction, trust in manager, and customer's perceived service quality in deluxe hotel. The empirical results show that contact employee' job satisfaction and trust in manager are significantly related to OCB and that their active engagement in OCB has a positive relationship with the perception of service quality. Although there exists a significant common method factor possibly influencing the strength of the relationship, this factor did not affect the overall pattern of significant relationship. Another notable finding indicates that, unlike a global OCB measure, path estimates in the relationship of job satisfaction and trust to OCB variable are not similar and suggests that the multiple facets of OCBs provide more detailed information than a global OCB.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.48-48
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• 2011

We have developed a chemically-driven top-down approach using vapor phase HCl to form various GaN nanostructures and successfully demonstrated dislocation-free and strain-relaxed GaN nanostructures without etching damage formed by a selective dissociation method. Our approach overcomes many limitations encountered in previous approaches. There is no need to make a pattern, complicated process, and expensive equipment, but it produces a high-quality nanostructure over a large area at low cost. As far as we know, this is the first time that various types of high-quality GaN nanostructures, such as dot, cone, and rod, could be formed by a chemical method without the use of a mask or pattern, especially on the Ga-polar GaN. It is well known that the Ga-polar GaN is difficult to etch by the common chemical wet etching method because of the chemical stability of GaN. Our chemically driven GaN nanostructures show excellent structure and optical properties. The formed nanostructure had various facets depending on the etching conditions and showed a high crystal quality due to the removal of defects, such as dislocations. These structure properties derived excellent optical performance of the GaN nanostructure. The GaN nanostructure had increased internal and external quantum efficiency due to increased light extraction, reduced strain, and improved crystal quality. The chemically driven GaN nanostructure shows promise in applications such as efficient light-emitting diodes, field emitters, and sensors.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.279-282
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• 2013

Recently, it has been interested much that AlN (Aluminum Nitride) crystals can be applied to UV LEDs and high power devices as like GaN and SiC crystals. The reports about commercial grade of AlN wafers in the world have been absent, however several results for growth of large size of AlN single crystals have been reported from abroad. In this report, the result of AlN single crystals of a diameter of about 8 mm grown are reported. Optical microscopic characterization was applied to observe the form of the crystals and the crystal quality was evaluated by FWHM measurement by DCXRD rocking curve analysis.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.268-272
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• 2011

Due to their novel properties, GaN based semiconductors and their nanostructures are promising components in a wide range of nanoscale device applications. In this work, the gallium nitride is deposited on c-axis oriented sapphire and porous SWCNT substrates by molecular beam epitaxy using a novel single source precursor of $Me_2Ga(N_3)NH_2C(CH_3)_3$ with ammonia as an additional source of nitrogen. The advantage of using a single molecular precursor is possible deposition at low substrate temperature with good crystal quality. The deposition is carried out in a substrate temperature range of 600-750$^{\circ}C$. The microstructural, structural, and optical properties of the samples were analyzed by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence. The results show that substrate oriented columnar-like morphology is obtained on the sapphire substrate while sword-like GaN nanorods are obtained on porous SWCNT substrates with rough facets. The crystallinity and surface morphology of the deposited GaN were influenced significantly by deposition temperature and the nature of the substrate used. The growth mechanism of GaN on sapphire as well as porous SWCNT substrates is discussed briefly.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.248-251
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• 2009

We have investigated the effect of the quality of 1.3 um distributed feed back laser diode (DFB-LD) on the design of anti-reflection (AR) coatings. Optimal condition of AR coating to prevent internal feedback from both facets and reduce the reflection-induced intensity noise of laser diode was simulated with Macleod Simulator. Coating materials used in this work were ${Ti_3}{O_5}$ and $SiO_2$, of which design thickness were 105 nm and 165 nm, respectively. AR coating films were deposited by Ion-Assisted Deposition system. The electrical and optical properties of 1.3 um laser diode were characterized by Bar tester and Chip tester. Threshold current and slop-efficiency of DFB-LD were 27.56 mA 0.302 W/A. Far field pattern and wavelength of DFB-LD were $22.3^{\circ}(Horizontal){\times}24.4^{\circ}$ (Vertical), 1313.8 nm, respectively.

• Journal of Korean society of Dental Hygiene
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• v.5 no.2
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• pp.247-261
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• 2005

The main objective of this study is to investigate the factors affecting patient satisfaction, repeat-use intention, and inducement intention for providing the suggestion for patient-oriented management of dental services organizations. For this study, the patient satisfaction model including 14 facets of satisfaction factors such as distance(time/location), human services(dentist-hygienist), treatment results, and facilities(convenient facilities/parking lot) was examined. Data were collected from 196 patients who visiting the same dental services organization more than two times of ten dental clinics at Kyeongsangnam-do area using self-administered questionnaire. Major results of the empirical analysis are as follows: First, patient satisfaction, repeat-use intention, and inducement intention were significantly correlated with gender, age, economic conditions among patients of dental clinics. Second, kindness of hygienist, treatment results, kindness of receptionist, waiting time, emergency medical services, and right-fee for services were found to have significant influence on dental services organizations. These research findings suggest that improvement of service quality in dental care and advancement in treatment ability of dentist and hygienist are very important to improve patient satisfaction and patient-oriented service system in dental services organizations.

• The Journal of Asian Finance, Economics and Business
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• v.8 no.5
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• pp.1047-1054
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• 2021

University academicians are playing a significant role in nation building and striving hard to impart quality education to students and also instill moral and ethical values in them. The current study aims to determine the relationship between work-life balance (WLB) and satisfaction among academicians. For the study purpose, 154 academicians from different universities with varied designations were selected randomly from the Kingdom of Saudi Arabia. Pareek et al. (2011) constructed and validated a scale to gather responses from respondents with the aim of understanding WLB in relation to satisfaction. Descriptive and inferential statistics were used to interpret the results to make the study more authentic and valuable. The study's findings revealed that (i) all facets of WLB have positive relationships with one another, resulting in workplace satisfaction; (ii) the result also reflects that male faculty members have a lot of pressure and responsibility in the universities than the female faculty members which reflect that male are more prone to dissatisfaction in comparison to the dfemale faculty members (iii) the factor personal needs is having the high degree of correlation followed by the social needs. Results indicate that WLB plays a crucial role to provide satisfaction and surely ignite new information in the contemporary knowledge of work life balance among the Saudi Arabian Universities.

• International Journal of Advanced Culture Technology
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• v.11 no.4
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• pp.9-15
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• 2023

The outbreak of COVID-19 has significantly impacted various facets of individuals' lives, including perceptions, leisure activities, work-family balance, and overall life satisfaction. This study aims to explore the intricate relationships among changes in perceptions due to COVID-19, leisure activity satisfaction, work-family conflict, and life satisfaction of married working women. Employing path analysis, we examined a dataset of 1,973 married working women drawn from the 8th Korean Women and Families Panel Survey. The findings indicate that while changes in perception associated with COVID-19 did not directly affect leisure activity satisfaction and life satisfaction, they did significantly decrease work-family conflict, indirectly leading to heightened life satisfaction. Additionally, leisure activity satisfaction emerged as a mitigating factor for work-family conflict, contributing to enhanced life satisfaction. These results emphasize the importance of understanding the interplay between external factors, individual perceptions, and well-being, offering insights for devising tailored strategies. The study holds significance in guiding policies and interventions to enhance the quality of life for married working women in the context of evolving pandemic challenges.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.173-173
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• 2010

Recently, a patterned sapphire substrate (PSS) has been intensively used as one of the effective ways to reduce the dislocation density for the III-nitride epitaxial layers aiming for the application of high-performance, especially high-brightness, light-emitting diodes (LEDs). In this paper, we analyze the growth kinetics of the atoms and crystalline quality for the undopped-GaN depending on the facets of the pattern fabricated on a sapphire substrate. The effects of the PSS on the device characteristics of InGaN/GaN LEDs were also investigated. Several GaN samples were grown on the PSS under the different growth conditions. And the undoped-GaN layer was grown on a planar sapphire substrate as a reference. For the (002) plane of the undoped-GaN layer, as an example, the line-width broadening of the x-ray diffraction (XRD) spectrum on a planar sapphire substrate is 216.0 arcsec which is significantly narrower than that of 277.2 arcsec for the PSS. However, the line-width broadening for the (102) plane on the planar sapphire substrate (363.6 arcsec) is larger than that for the PSS (309.6 arcsec). Even though the growth parameters such as growth temperature, growth time, and pressure were systematically changed, this kind of trend in the line-width broadening of XRD spectrum was similar. The emission wavelength of the undoped-GaN layer on the PSS was red-shifted by 5.7 nm from that of the conventional LEDs (364.1 nm) under the same growth conditions. In addition, the intensity for the GaN layer on the PSS was three times larger than that of the planar case. The spatial variation in the emission wavelength of the undoped-GaN layer on the PSS was statistically ${\pm}0.5\;nm$ obtained from the photoluminescence mapping results throughout the whole wafer. These results will be discussed in terms of the mixed dislocation depending on the facets and the period of the patterns.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.95-99
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• 2018

We discuss the structural and optical characteristics of GaN nanowires (NWs) grown on Si(111) substrates by a plasma-assisted molecular-beam epitaxy. The GaN NWs with high crystal quality were formed by adopting a new growth approach, so called Ga pre-deposition (GaPD) method. In the GaPD, only Ga was supplied without nitrogen flux on a SiN/Si surface, resulting in the formation of Ga droplets. The Ga droplets were used as initial nucleation sites for the growth of GaN NWs. The GaN NWs with the average heights of 60.10 to 214.62 nm obtained by increasing growth time. The hexagonal-shaped top surfaces and facets were observed from the field-emission electron microscope images of GaN NWs, indicating that the NWs have the wurtzite (WZ) crystal structure. Strong peaks of GaN (0002) corresponding to WZ structures were also observed from double crystal x-ray diffraction rocking curves of the NW samples. At room temperature, free-exciton emissions were observed from GaN NWs with narrow linewidth broadenings, indicating to the formation of high-quality NWs.