• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.337-344
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• 1995

We have detected the resonant stimulated Raman scattering signal when the Q-switched Nd:YAG laser beam are incident on the $35~62{\mu}m$ sized water droplet as pump beam. The signals appeared as uniformly spaced peaks and the intervals between peaks become narrow as the droplet size increases. Also we have confirmed the morphology dependent resonances (MDR's) characteristic of the stimulated Raman scattering signal when the water droplet becomes nearly spherical shape after two water droplets are coupled to a droplet. The error in the measured intervals between MDR's of same mode order is about 5%.out 5%.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.529-532
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• 2002

We experimentally investigate the evolution of nanosecond Stokes pulses in a single-pass Raman laser pumped by a Q-switched Nd: YAG laser at 1064 nm. As a Raman medium, a GeO$_2$-doped graded-index multimode fiber of 220m long is used. We demonstrate that efficient generation of several Stokes components with 1.5-2.7 nanosecond pulsewidth is obtained by varying the input pump energy.

• Korean Journal of Optics and Photonics
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• v.11 no.5
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• pp.365-370
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• 2000

We have constructed a collinear four pass Ti.sapphire laser amplifier by usmg polmization effect When we pumped the mnplifier with 188 mJ second harmonics of Q-switched Nd:YAG laser, we observed that a 450 mW 1l1cident cw Ti:sapphire laser beam is amphfled to pulse with energy of 34 mJ and pulse width (FWffM) of 25 os. We could mmllmze the a.mplified spontaneous emission by simple method of rotating the Tbapphire amplifier rod er rod

• Proceedings of the KIEE Conference
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• 1993.07a
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• pp.460-463
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• 1993

In this paper, The laser transmitter module is designed as the subsystem of the high repetitive laser rangefinder. The module consists of high voltage power supply, high voltage control circuits, high voltage discharger, electro-optic Q-switch driver, and laser resonator. The high voltage power supply is composed of 2-phase flyback converter. And it has 220W power level and 78% conversion efficiency. From the Q-switch driver of the crossed porro resonator, the phase retardation voltage is switched from 600V to -1500V with 200ns falling time. The module can be operated up to 15Hz. And it generates the laser pulse which has 20ns width and 80mJ.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2004.06a
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• pp.137-146
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• 2004

Laser Induced Breakdown Spectroscopy(LIBS) system is being developed as an in-situ analysis system for the radioactive waste glass in the cold crucible melter. In order to complete the LIBS system, a spectrometer, a detector, and a laser were structured. An ESA 3000 (LLA Instruments GmbH, Germany) including a calibrated Kodak KAF-1001 CCD detector was selected as the spectrometer. A Q-switched Nd-YAG Brilliant(Quantel, France) laser was selected as an energy source. As the first research stage, the excitation temperatures of Fe(I) as a function of the detector's delay intervals(500, 1000, 1500, 2000ns) were evaluated using the Einstein-Boltzmann equation. The optimized excitation temperature of Fe (I) was 7820k at the delay time of 1500㎱ using the 532nm Nd-YAG laser pulse. This LIBS system will be optimized under the real environment vitrification facility in the near future and then used to be in-situ analyzed the glass compositions in the melter qualitatively.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.11a
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• pp.608-611
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• 2011

Laser-induced combustions and explosions generated by high laser irradiances were explored by Laser-Induced Breakdown Spectroscopy (LIBS) in rich, and stoichiometric conditions. The laser used for target ablation is a Q-switched Nd:YAG laser with 7 ns pulse duration at wavelength of 1064 nm laser energies from 40 mJ to 2500 mJ ($6.88{\times}10^{10}-6.53{\times}10^{11}\;W/cm^2$). The plasma light source from aluminum detected by the echelle grating spectrometer and coupled to the gated ICCD(a resolution (${\lambda}/{\Delta}{\lambda}$) of 5000). This spectroscopic study has been investigated for obtaining both the atomic signals of aluminum (fuel) - oxygen (oxidizer) and the calculated ambient condition (plasma temperature and electron density). The essence of the paper is observing specific electron density ratio which can support the processes of combustion and explosion between ablated aluminum plume and oxygen from air by inducing high power laser.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.44 no.9
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• pp.789-795
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• 2016

Laser-induced combustions and explosions generated by high laser irradiances were explored by Laser-Induced Breakdown Spectroscopy (LIBS). The laser used for target ablation is a Q-switched Nd:YAG laser with 7 ns pulse duration at wavelength of 1064 nm laser energies from 40 mJ to 2500 mJ ($6.88{\times}10^{10}-6.53{\times}10^{11}W/cm^2$). The plasma light source from aluminum detected by the echelle grating spectrometer and coupled to the gated ICCD(a resolution (${\lambda}/{\Delta}{\lambda}$) of 5000). This spectroscopic study has been investigated for obtaining both the atomic/molecular signals of aluminum-oxygen and the calculated ambient condition such as plasma temperature and electron density. The essence of the paper is observing specific electron density ratio which can support the processes of chemical reaction and combustion between ablated aluminum plume and oxygen from air by inducing high laser energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.322-322
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• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.

• Current Optics and Photonics
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• v.7 no.3
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• pp.297-303
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• 2023

In this paper, we demonstrated a high-energy (285 mJ) mid-infrared flashlamp-pumped electro-optically 𝚀-switched Er:YAG master oscillator power amplifier (MOPA) system and comprehensively investigated its temporal, spectral, and spatial characteristics. To increase the output energy, we optimized the delay between the timings at which the flashlamps of the master oscillator and power amplifier were triggered. In addition, the output energy was improved while minimizing thermal effects by cooling the MOPA system to a temperature slightly above the dew point. Consequently, the MOPA structure boosted the output energy without damaging the lithium niobate Pockels cell, which is a crucial element in 𝚀-switching. This design realized pulses with energies up to 0.285 J and pulse durations of approximately 140 ns at a wavelength of 2,936.7 nm. This high-energy mid-IR Er:YAG MOPA system can be used for various scientific, engineering, and military underwater applications.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.11 no.3
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• pp.172-178
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• 1986

The recent interest in the design of filters is motivatied by the fact that such filter can be fully integrated using standard metal-oxide-semiconductor processing technology. This is due to replacing all the resistors in the active RC filter network by the switched capacitors. The voltage gain of a SC filter depends only on the rations of capacitance and these ratios can be obtained and maintained to high accuracy. Therefore, it is known that a switched capacitor is much better than a resistor in temperature and linearity characteristics. This paper proposed a programmable SC filter and proved the fact that ${omega}_0$ Q and G of this circuit can be controlled by digital signal. Experiments show that SC filter remains the low sensitivities but it can't avoid little influence of parasitic capacitance. As the transfer characteristic of the SC filter is varied with sampling frequency and resistor array, SC filtering technigue can be applied for digital processing, speech analysis and synthesis and so on.