• Korean Journal of Materials Research
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• v.31 no.9
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• pp.481-487
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• 2021

ZnO particles are successfully synthesized at 150 ℃ for 30 min using zinc acetate as the Zn source and 1,4-butanediol as solvent using a relatively facile and convenient glycol process. The effect of ammonium hydroxide amounts on the growth behavior and the morphological evolution of ZnO particles are investigated. The prepared ZnO nanoparticle with hexagonal structure exhibits a quasi-spherical shape with an average crystallite size of approximately 30 nm. It is also demonstrated that the morphology of ZnO particles can be controlled by 1,4-butanediol with an additive of ammonium hydroxide. The morphologies of ZnO particles are changed sequentially from a quasi-spherical shape to a rod-like shape and a hexagonal rod shape with a truncated pyramidal tip, exhibiting preferential growth along the [001] direction with increasing ammonium hydroxide amounts. It is demonstrated that much higher OH^- amounts can produce a nano-tip shape grown along the [001] direction at the corners and center of the (001) top polar plane, and a flat hexagonal symmetry shape of the bottom polar plane on ZnO hexagonal prisms. The results indicate that the presence of NH⁴⁺ and OH^- ions in the solution greatly affects the growth behaviors of ZnO particles. A sharp near-band-edge (NBE) emission peak centered at 383 nm in the UV region and a weak broad peak in the visible region between 450 nm and 700 nm are shown in the PL spectra of the ZnO synthesized using the glycol process, regardless of adding ammonium hydroxide. Although the broad peak of the deep-level-emission (DLE) increases with the addition of ammonium hydroxide, it is suggested that the prominent NBE emission peaks indicate that ZnO nanoparticles with good crystallization are obtained under these conditions.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.13 no.1
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• pp.371-384
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• 2019

Motion perception has been tremendously improved in neuroscience and computer vision. The baseline motion perception model is mediated by the dorsal visual pathway involving the cortex areas the primary visual cortex (V1) and the middle temporal (V5 or MT) visual area. However, few works have been done on the extension of neural models to improve the efficacy and robustness of motion perception of real sequences. To overcome shortcomings in situations, such as varying illumination and large displacement, an adaptive V1-MT motion perception (Ad-V1MTMP) algorithm enriched to deal with real sequences is proposed and analyzed. First, the total variation semi-norm model based on Gabor functions (TV-Gabor) for structure-texture decomposition is performed to manage the illumination and color changes. And then, we study the impact of image local context, which is processed in extra-striate visual areas II (V2), on spatial motion integration by MT neurons, and propose a V1-V2 method to extract the image contrast information at a given location. Furthermore, we take feedback inputs from V2 into account during the polling stage. To use the algorithm on natural scenes, finally, multi-scale approach has been used to handle the frequency range, and adaptive pyramidal decomposition and decomposed spatio-temporal filters have been used to diminish computational cost. Theoretical analysis and experimental results suggest the new Ad-V1MTMP algorithm which mimics human primary motion pathway has universal, effective and robust performance.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.2043-2048
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• 2014

Two isomers of a new tetraaza macrotricycle 2,2,4,9,9,11-hexaazamethyl-1,5,8,12-tetraazatricyclo[$10.2.2^{5.8}$]-octadecane ($L^2$) containing additional N-$CH_2CH_2$-N linkages, C-meso-$L^2$ and C-racemic-$L^2$, have been prepared by the reaction of 1-bromo-2-chloroethane with C-meso-$L^1$ or C-racemic-$L^1$ ($L^1$ = 5,5,7,12,12,14-hexamethyl-1,4,8,11-tetraazacyclotetradecane). Both C-meso-$L^2$ and C-racemic-$L^2$ react with copper(II) ion to form $[Cu(C-meso-L^2)]^{2+}$ or $[Cu(C-racemic-L^2)]^{2+}$ in dehydrated ethanol, but do not with nickel(II) ion under similar conditions. Crystal structure of [Cu(C-racemic-$L^2$)($H_2O$)]$(ClO_4)_2$ shows that the complex has distorted square-pyramidal coordination geometry with an apically coordinated water molecule. Unexpectedly, the Cu-N distances [2.016(3)-2.030(3) ${\AA}$] of [Cu(C-racemic-$L^2$)($H_2O$)]$(ClO_4)_2$ are longer than those [1.992(3)-2.000(3) ${\AA}$] of [Cu(C-racemic-$L^1$)($H_2O$)]$(ClO_4)_2$. As a result, $[Cu(C-racemic-L^2)(H_2O)]^{2+}$ exhibits weaker ligand field strength than $[Cu(C-racemic-L^1)(H_2O)]^{2+}$. The copper(II) complexes readily react with CN- ion to yield the cyano-bridged dinuclear complex $[Cu_2(C-meso-L^2)_2CN]^{3+}$ or $[Cu_2(C-racemic-L^2)_2CN]^{3+}$. Spectra and chemical properties of $[Cu(C-meso-L^2)]^{2+}$ and $[Cu_2(C-meso-L^2)_2CN]^{3+}$ are not quite different from those of $[Cu(C-racemic-L^2)]^{2+}$ and $[Cu_2(C-racemic-L^2)_2CN]^{3+}$, respectively.

• Progress in Superconductivity and Cryogenics
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• v.21 no.4
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• pp.1-5
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• 2019

We investigated the effect of Fe₃O₄ addition on the critical temperature of (Bi, Pb)-2223 polycrystalline samples. Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_10+δ + x wt. % Fe₃O₄ (x = 0.0, 0.2, 0.4, 0.6, and 0.8) samples were prepared by using a solid-state reaction method. The analysis of X-ray diffraction data indicates that as Fe₃O₄ is added, dominant phase of the sample changes from Bi-2223 to Bi-2212 with an increasing Bi-2201 phase. The transition temperature of the samples drastically decreased with the Fe₃O₄ addition. The resistance data of samples with x = 0.2 and 0.4 showed a double transition indicating a coexistence of Bi-2223 and Bi-2212 phase while the samples with x = 0.6 and 0.8 showed a single transition with a semiconducting behavior. This phase transition may originate from changes in local structure of the Bi-2223 system by Fe₃O₄ addition. Analysis of the pair distribution function of the Cu-O pair in the CuO₂ plane calculated from extended X-ray absorption fine structure data revealed that the oxygen coordination of copper ion changes from CuO₄ planar type (x = 0.0 - 0.4) to CuO₅ pyramidal type (x = 0.6, 0.8). The correlated Debye-Waller factor, providing information on the atomic disorder within the CuO₂ plane, shows an inverse relation to the coordination number. These results indicate that addition of Fe₃O₄ changes the oxygen distribution around Cu in the CuO₂ plane, causing a phase transition from Bi-2223 to more stable Bi-2212/Bi-2201 phases.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.114-118
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• 2011

We report on the growth and characterization of nano and micro scale GaN structures selectively grown on the vertex of hexagonal GaN pyramids. $SiO_2$ near the vertex of hexagonal GaN pyramids was removed by optimized photolithgraphy process and followed by a selective growth of nano and micro scale GaN structures by metal organic vapor phase epitaxy (MOVPE). The pyramidal GaN nano and micro structures which have crystal facets of semi-polar {1-101} facets were formed only on the vertex of GaN pyramids and the size of the selectively grown nano and micro GaN structures was easily controlled by growth time. As a result of TEM measurement, Reduction of threading dislocation density was conformed by transmission electron microscopy (TEM) in the selectively grown nano and micro GaN structures. However, stacking faults were newly developed near the edge of $SiO_2$ film because of the roughness and nonuniformity in thickness of the $SiO_2$ film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.110-113
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• 2011

In this paper, we propose a new method for the fabrication of GaN microstructures formed only on the vertex of GaN pyramid by using of metal catalysts. GaN pyramidal structures were selectively grown on 3 ${\mu}m$ $SiO_2$ dot patterns followed by thin film deposition of Au and Cr only on the vertex area of the GaN pyramids with precisely controlled photolithography. After the metal deposition, the samples were loaded in the MOVPE reactor for the growth of GaN microstructures for 10 minutes. Temperature for the growth of the GaN microstructures was changed from $650^{\circ}C$ to $750^{\circ}C$. Rod type GaN microstructures were grown in the direction of vertical to the six {1-101} facets and the shape of the GaN microstructures was changed depend on the type of metal.