• Current Optics and Photonics
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• 제4권3호
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• pp.238-246
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• 2020

The heat distribution in crystals in a 2-㎛ acousto-optic Q-switched Tm:LuAG laser pumped by pulsed-laser-diode (pulsed-LD) intermittent-pumping technology was analyzed using COMSOL software. The thermal lensing effect of the Tm:LuAG crystal can be mitigated by pulsed-LD intermittent-pumping techniques. An experimental setup using this kind of approach achieved maximum output energy of 8.31 mJ, minimum pulse width of 101.9 ns, and highest peak power of 81.55 kW, reached at a Q-switched repetition rate of 200 Hz. It offers significant improvement of performance of the output laser beam, compared to pulsed-LD double-ended pumping technology at the same repetition rate.

• 한국광학회지
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• 제14권1호
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• pp.44-50
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• 2003

반도체 레이저 측면 여기시 Nd:YAG 레이저 매질에서 발생하는 열영향에 대해 분석하였다. 열영향을 고감도로 측정하기 위해 편광자와 Nd:YAG 매질 사이에 λ/4판을 삽입하여 여기 파워에 따라 발생하는 depolarization양을 측정하였다. CCD로 는 열영향에 의한 매질 내에서의 탐침광 분포 변화를 측정하고 해석하여 반도체 레이저 측면 여기시 발생하는 열영향을 최소화하기 위한 공진기 설계의 효과적인 방법을 제시하였다.

• Current Optics and Photonics
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• 제1권2호
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• pp.113-117
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• 2017

With the increasing use of high-power laser diode bars (LDBs) and stacked LDBs, the issue of thermal control has become critical, as temperature is related to device efficiency and lifetime, as well as to beam quality. To improve the thermal resistance of an LDB set, we propose and analyze a bypass heat sink with a top canopy structure for an LDB set, instead of adopting a thick submount. The thermal bypassing in the top-canopy structure is efficient, as it avoids the cross-sectional thermal saturation that may exist in a thick submount. The efficient thickness range of the submount in a typical LDB set is guided by the thermal resistance as a function of thickness, and the simulated bypassing efficiency of a canopy is higher than a simple analytical prediction, especially for thinner canopies.

• Current Optics and Photonics
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• 제4권2호
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• pp.127-133
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• 2020

We successfully constructed a passively Q-switched Yb:YAG laser ignitor pumped by a diode laser with low power and long pulse width. To the best of our knowledge, this is the first study to achieve a quasi-MW output power from an optimized Q-switch Yb:YAG laser ignitor by using a pumping diode laser module emitting at under a power of 23 W. The output pulse energy of our optimized laser is 0.98 mJ enclosed in a 1.06 ns pulse width, corresponding to a peak power of 0.92 MW.

• 한국광학회지
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• 제17권5호
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• pp.455-460
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• 2006

광섬유 연결 반도체레이저를 여기원으로 하는 단면여기 세라믹 Nd:YAG 레이저의 출력 특성과 레이저 출력에 영향을 미치는 열 영향에 대하여 연구하였다. 반사율이 90.4 %인 출력거울을 사용하였을 경우 약 33.8 %의 최대 출력 효율을 얻었고, 기울기 효율은 39.3 %를 나타내었다. 세라믹 Nd:YAG의 열렌즈 효과에 의해 여기 파워 6 W 이상에서 출력 감소 현상이 나타났으며, 12 W 부근에서 레이저가 발진되지 않았다.

• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 창립 20주년기념 특별학술발표회
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• pp.251-252
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• 2009

• 전자공학회논문지D
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• 제34D권11호
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• pp.20-24
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• 1997

We have successfully fabricated high power (~20W) laser diode array, which are useful for pumping Nd:YAG lasers. The laser diode aray has 20 100.mu.m-wide cahnnels of which space was adjusted to 350.mu.m to improve thermal characteristics. And channel width is 100.mu.m. For an uncoated LD array, the output power of 15.66W has been obtained at 41A under quasi-CW operation, which results in about 0.42W/A slope efficiency. After aR(5%) and HR (95%) coatings on both facets, the output power was improved up to 21.18W at 40A under the same operation as above and the slope efficiency was 0.795W/A. On the other hand, by using a near field measurement system consisting of objective lens, eyepiece, CCD camera and image processing board, the typical near field patten of 1*20 LD array was observed.

• Current Optics and Photonics
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• 제2권6호
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• pp.582-588
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• 2018

A $Nd:YVO_4$ laser dual-end-pumped by a wavelength-locked 878.6 nm laser diode is presented. At the repetition rate of 500 KHz, the absorbed pump power of 58 W, an output power of 26.1 W at 1064 nm is obtained, corresponding to an optical-optical efficiency of 45%. The pulse width is 44.2 ns. Meanwhile, the effects of traditional 808 nm pumping and 878.6 nm dual-end-pumping on the output laser beam quality and pulse width are compared and analyzed in an experiment.

• Medical Lasers
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• 제10권2호
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• pp.82-89
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• 2021

Background and Objectives Due to changes in diet and lifestyle, the number of obese people worldwide is steadily increasing. Obesity has an adverse effect on a healthy life, so it needs treatment and improvement. Research related to this is continuously being conducted. Materials and Methods The laser system to compact designed using 808 nm laser diode and Neodymium Yttrium orthovanadate generates a 1064 nm wavelength, the periodically polarized nonlinear crystal pumping laser beam. The pulsed 1064 nm wavelength beam passing through the AO Q-switch is used as the pumping light of the nonlinear optical crystal and is irradiated to the periodic polarized nonlinear optical crystal with a quasi-phase matching period. Nonlinear optical crystals use an oven to control the temperature to generate the desired 1980 nm and 2300 nm wavelengths. Results The 1980 nm and 2300 nm wavelengths generated by temperature control of nonlinear optical crystals are effective for lipolysis. A fiber catheter was used so that the laser could be directly irradiated to the fat cells. In particular, the new wavelength (1980 nm, 2300 nm) can increase the fat reduction effect with low energy (1.3 W). When a laser with a combination wavelength of 1980 nm and 2300 nm was used, an average lipolysis effect of 20% was obtained. Conclusion A mid-infrared lipolysis laser system with excellent absorption of fat and water has been developed. We conducted a princlinical study to confirm the efficacy and safety of the lipolysis laser system, and obtained good results for lipolysis with low energy.

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.