• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.185-185
• /
• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• 센서학회지
• /
• 제11권6호
• /
• pp.371-377
• /
• 2002

$Y_2O_3:Eu^{3+}$ and Li-doped $Y_2O_3:Eu^{3+}$ thin films have been grown on sapphire substrates using a pulsed laser deposition technique. The thin film phosphors were deposited at a substrate temperature of $600^{\circ}C$ under the oxygen pressure of 100, 200 and 300 mTorr. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity and photoluminescence (PL) of the films are highly dependent on the oxygen pressure. The PL brightness data obtained from $Y_2O_3:Eu^{3+}$ films grown under optimized conditions have indicated that sapphire is one of the most promising substrate for the growth of high quality $Y_2O_3:Eu^{3+}$ thin film red phosphor. In particular, the incorporation of $Li^{+}$ ions into $Y_2O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with LiF-doped $Y_{1.84}Li_{0.08}Eu_{0.08}O_3(Y_2O_3LiEu)$, whose brightness was increased by a factor of 2.7 in comparison with that of $Y_2O_3:Eu^{3+}$ films. This phosphor may promise for application to the flat panel displays.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.901-904
• /
• 2001

For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.395-397
• /
• 2002

Dielectric thin films of Pb$\_$0.72/La$\_$0.28/Ti$\_$0.93/O$_3$(PLT(28)) have been deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film. Structural properties including dielectric constant, and ferroelectric characteristics of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step process including pre-annealing treatment has a strong (111) orientation. However, the films deposited by using single-step process with hydrogen annealing process shows the smallest grain size.

• 한국전기전자재료학회논문지
• /
• 제17권9호
• /
• pp.930-935
• /
• 2004

$({Li}_{0.5}0{La}_{0.5}){TiO}_3$ (LLTO) solid electrolyte was grown on LiCo{O}_2 (LCO) cathode films deposited on $Pt/Ti{O}-2/Si{O}_2/Si$ substrate using pulsed laser deposition for all-solid-state lithium microbattery. LLTO solid electrolyte exhibits an amorphous phase at various deposition temperatures. LLTO films deposited at 10$0^{\circ}C$ showed a clear interrace without any chemical reaction with LCO, and showed an initial discharge capacity of 50 $\mu$Ah/cm$^2$-$\mu$m and capacity retention of 90 % after 100 cycles with Li anode in 1mol$ LiCl{O}_4$ in propylene carbonate (PC). The increase of capacity retention in LLTO/LCO structure than LCO itself was attributed to the structural stability of LCO cathode films by the stacked LLTO. The cells of LLTO/LCO with LLTO grown at $100^{\circ}C$ showed a good cyclic property of 63.6 % after 300 cycles. An amorphous LLTO solid electrolyte is possible for application to solid electrolyte for all-solid-state lithium microbattery.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
• /
• pp.127-130
• /
• 2005

The properties of phosphorus doped ZnO multilayer thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated by using annealing treatment at various annealing temperature after deposition. The phosphorus doped ZnO multilayer was composed of phosphorus doped ZnO layer and two pure ZnO layers on sapphire substrate. The structural. electrical and optical properties of the ZnOthin films were measured by X-ray diffraction (XRD). Hall measurements and photoluminescence (PL). As the annealing temperature optimized. the electrical properties of the ZnO multilayer showed a electron concentration of $1.56{\times}10^{16}/cm^3$, a resistivity of 17.97 ${\Omega}cm$. It was observed the electrical property of the film was changed by dopant activation effect as thermal annealing process

• 한국초전도ㆍ저온공학회논문지
• /
• 제25권2호
• /
• pp.14-18
• /
• 2023

Superconducting layers deposited on the metal substrate using the pulsed laser deposition process (PLD) play a crucial role in exploring new applications of superconducting wires and enhancing the performance of superconducting devices. In order to improve the superconducting property and increase the throughput of superconducting wire fabricated by pulsed laser deposition, high temperature heating device is needed that provides high temperature stability and strong durability in high oxygen partial pressure environments while minimizing performance degradation caused by surface contamination. In this study, new heating device have been developed for PLD process that deposit and growth the superconducting material continuously on substrate using reel-to-reel transportation apparatus. New heating device is designed and fabricated using iron-chromium-aluminum wire and alumina tube as a heating element and sheath materials, respectively. Heating temperature of the heater was reached over 850 ℃ under 700 mTorr of oxygen partial pressure and is kept for 5 hours. The experimental results confirm the effectiveness of the developed heating device system in maintaining a stable and consistent temperature in PLD. These research findings make significant contributions to the exploration of new applications for superconducting materials and the enhancement of superconducting device performance.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
• /
• pp.88-89
• /
• 2007

ZnO thin films were deposited on $Al_2O_3$ (alumina) substrates by pulsed laser deposition (PLD) using Nd:YAG laser with a wavelength of 355nm, at room temperature and oxygen partial pressure of 1, 10, 30, 50, 100, and 200m Torr. Furthermore, deposited ZnO thin films were post-annealed at 400, 550, $600^{\circ}C$. The effects of oxygen partial pressure and post-annealing temperature on structural properties of the deposited films have been investigated by means of X-ray diffraction (XRD), and atomic force microscope (AFM), respectively. It has been found that ZnO thin films exhibit c-axis orientation, exhibiting an increased foil width at half maximum (FWHM) value of (002) diffraction peak at 30m Torr oxygen partial pressure and higher post-annealing temperature ($700^{\circ}C$).

• 한국초전도ㆍ저온공학회논문지
• /
• 제8권4호
• /
• pp.15-18
• /
• 2006

REBCO coated conductors (RE: rare earth elements) have recently drawn great attention since they are known to possess stronger flux pinning centers in high magnetic fields compared with YBCO coated conductors. In this study, $GdBa_2Cu_3O_{7-d}(GdBCO)$ was selected to investigate the influence of the distance between target and substrate and substrate temperature on the superconducting properties of GdBCO films on the $SrTiO_3(100)$ substrate. Samples were fabricated by pulsed laser deposition (PLD) with a Nd:YAG laser (355nm). Under a given oxygen pressure of 800mTorr, we changed the distance between target and substrate from 5.5cm to 7.0cm and the substrate temperature from $750^{\circ}C\;to\;850^{\circ}C$. The crystallinity and texture of GdBCO films were analyzed by X-ray diffraction (XRD), and the surface morphology was observed by the scanning electron microscopy (SEM). Tc and Jc values were measured by the four point probe method. High quality GdBCO films with Tc of 89.7K and Jc over $1MA/cm^2$ at 77 K in self field were successfully fabricated by optimizing processing parameters. The detailed processing conditions, microstructure and superconducting properties will be presented for a discussion.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.306.1-306.1
• /
• 2016

ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.