• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.221-223
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• 2002

We have measured the secondary electron emission yield ${\gamma}_i$ from MgO films deposited on $SiO_2/Si$ for low energy noble ions. A pulsed ion beam technique was employed in order to suppress the surface charging effect during the measurement. From the measurement of the ion - induced secondary electron emission coefficients ${\gamma}_i$ for 5 noble ions with energies ranging from 50 eV to 225 eV, it was shown that, with increasing the kinetic energies of the incident ions, the ${\gamma}_i$ increased

• 한국방사선학회논문지
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• 제2권1호
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• pp.31-34
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• 2008

The neutron capture spectrum for the light nuclide was very useful to study the nuclear structure. In the present study, the capture gamma-ray from the 27-keV resonance of $^{19}F(n,g)^{20}F$ reaction were measured with an anti-Compton NaI(Tl) spectrometer and the 3-MV Pelletron accelerator of the Research Laboratory for Nuclear Reactors at the Tokyo institute of technology. A neutron Time-of-Flight method was adopted with a 1.5 ns pulsed neutron source by the $^7Li(p,n)^7Be$ reaction. In the present experiment, a Teflon(($CF_2$)n) sample was used The sample was disk with a diameter of 90mm. The thickness of sample was determined so that reasonable counting rates could be obtained and the correction was not so large for the self-shielding and multiple scattering of neutrons in the sample, and was 5mm. The primary gamma-ray transitions were compared with previous measurement of Kenny.

• Journal of Power Electronics
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• 제17권6호
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• pp.1422-1432
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• 2017

This paper presents a buck-boost converter-based bipolar pulse generator, which is able to generate bipolar exponential pulses across a resistive load. The concept of the proposed approach depends on operating the involved buck-boost converters in discontinuous current conduction mode with high-voltage gain and enhanced efficiency. A full design of the pulse generator and its passive components is presented to ensure generating the pulses with the desired specifications (rise time, pulse width, and pulse magnitude) for a given load resistance and input dc voltage. In case of moderate pulsed output voltages (i.e. few of kV), one module of the presented bipolar generator can be employed. While in case of high-voltage pulsed output, multi-module version can be employed, where each module is fed from an isolated dc source and their outputs are connected in series. Simulation models for the proposed approach are built to elucidate their performance in case of one-module as well as multi-module based generator. Finally, a scaled-down prototype for one-module of buck-boost converter-based bipolar pulse generator is implemented to validate the proposed concept.

• 한국재료학회지
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• 제33권6호
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• Journal of Yeungnam Medical Science
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• 제12권2호
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• pp.366-385
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• 1995

항산균 감염증의 예방 및 치료를 위하여는 역학적인 연구가 중요하다. 본 연구에서는 감염증의 분자역학적 연구를 위한 기법중 아직 항산균을 대상으로 pulsed-field gel electrophoresis (PFGE) 분석법을 확립하고자 하였다. PFGE분석에 적절한 제한효소는 DraI, AsnI 및 XbaI 등이었고 각 제한효소마다 최적의 PFGE조건은 서로 달랐다. DraI의 경우는 두단계로 나누어 전기영동을 시행하였다. 제1단계의 initial pulse는 10초 final pulse는 15초였으며 제2단계는 initial pulse는 60초 final pulse는 70초이었다. 전기영동시간은 각 단계마다 각각 14시간씩이었다. XbaI의 경우는 제2단계 없이 initial pulse가 3초 final pulse가 12초였고 전기영동시간은 22시간이었다. AsnI의 경우는 제2단계 없이 initial pulse가 5초 final pulse가 25초였고 전기영동시간은 22시간이었다. 모든 경우에 있어서 전압은 200V로 하였다. 표준균주로는 M. bovis BCG, M. tuberculosis 및 M. fortuitum등을 사용하였는데 PFGE분석상 동일균종내에서 표준균주들 간의 차이는 발견할 수 없었다. 임상에서 분리된 9주의 M. fortuitum 균주를 대상으로 AsnI 제한효소로 PFGE분석을 시행한 결과 2주만을 제외하고는 서로 간의 유전형 분류가 가능하였다. 균주간의 유전적 거리를 결정하기 위하여 cluster analysis를 시행한 결과 M. fortuitum 균주들은 크게 두 집단으로 나뉘었다. 제한효소 AsnI으로 동일 균종의 분류가 안되는 M. fortuitum 균주들은 XbaI 제한효소을 사용한 PFGE분석으로 유전형의 구분이 가능하였다. Cluster analysis를 시행한 결과 크게 두 집단으로 나뉘었던 M. fortuitum 균주들은 보다 복잡한 집단으로 분류되어 XbaI을 사용한 PFGE분석법이 M. fortuitum 균주분류를 위하여는 보다 적절함을 알 수 있었다. Cluster analysis에서 얻은 최대 % dissimilarity 값은 0.74(AsnI) 및 0.75(XbaI)로서 이 값은 arbitrarily primed polymerase chain reaction(AP-PCR)법보다는 높고 restriction fragment length polymorphism(RFLP) 법보다는 낮아 PFGE법이 RFLP를 보완하거나 대치할 수 있는 세균 유전형 분석법임을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.261-264
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• 1995

The response speed enhancement in picosecond photoconductor made from RF planar magnetron sputtered hydrogenated amorphous germanium thin film is discussed. Pulsed laser annealing technique was used to fabricate the highly conductive ohmic contacts and to remove the shallow deflects in the deposited photoconductive film using the different laser powers. Measured V-I curve showed -5 times bigger conductance in photoconductive gap than the one used by the conventional vacuum annealing method using strip heater.

• 전자공학회논문지D
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• 제34D권4호
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• pp.17-26
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• 1997

A enw channel current model of GaAs MeSFET suitagle for applications to microwave CAD has been developed. The current model includes the bias-dependent frequency dispersion effects and its parameters are extracted from the pulsed I-V measurements at several quiescent bias points. The model is verified by applying to the nonlinear circuit designs of power amplifier and MMIC mixer.

• 한국표면공학회지
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• 제29권5호
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• pp.437-442
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• 1996

High quality $YBa_2Cu_3O_y$(YBCO) thin films for directly coupled dc superconducting quantum interference device (SQUID) were fabricated by pulsed laser deposition. Several critical parameters have been optimized through systematic studies. Thus, the films showing the $T_c$ of above 91K and $J_c$ of above$2\times10^6A/cm^2$ at 77K were routinely obtained. Extensive AFM and X-ray diffraction studies have been conducted for morphological and structural analyses. The directly coupled DC-SQUIDs were fabricated from the YBCO thin films deposited on $SrTiO_3$ bicrystals under the optimized conditions. The measurement on $2I_c$ and swing voltage give 200$\mu$A and 17$\mu$V at 77K, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.904-905
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• 2008

In this paper, a novel 60kV, 300A, 3kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and 15kW series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 830VDC, 300A pulses. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used.

• 한국재료학회지
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• 제9권1호
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• pp.86-91
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• 1999

(001) $\textrm{SrTiO}_3$(STO) 기판위에 고온초전도 $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$(YBCO)박막을 이용한 계단형 모서리 임계접합을 제조하였다. STO (100) 단결정 기판위에 계단형 모서리(step-edge)를 제작하기 위한 이온밀링 마스크로 plasma enhanced chemical vapor deposition방법으로 증착된 diamond-like carbon (DLC) 박막을 사용하였고, oxygen reactive ion etch 방법으로 건식식각하였다. 이렇게 제작된 계단형 모서리 기판위에 c-축 수직한 YBCO 박막과 STO박막을 pulsed laser deposition방법으로 에피텍셜하게 증착하였다. 계단의 상층과 하층에서 모두 임계가 형성되었으며 이 접합의 임계온도는 77 K 이상이었고 16K에서 $\textrm{I}_{c}\textrm{R}_{n}$products가 7.5mV, 77 K에서 0.3mV의 값을 나타내었다. 이들 전류-전압 특성은 two noisy resistively shunted Josephson junction 모델을 잘 만족하였다.