• Title/Summary/Keyword: Pulsed I-V

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Slow Noble Ion - Induced Secondary Electron Emission Characteristics of MgO Layer.

  • Lee, Sang-Kook;Kim, Jae-Hong;Lee, Ji-Hwa;Whang, Ki-Woong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.221-223
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    • 2002
  • We have measured the secondary electron emission yield ${\gamma}_i$ from MgO films deposited on $SiO_2/Si$ for low energy noble ions. A pulsed ion beam technique was employed in order to suppress the surface charging effect during the measurement. From the measurement of the ion - induced secondary electron emission coefficients ${\gamma}_i$ for 5 noble ions with energies ranging from 50 eV to 225 eV, it was shown that, with increasing the kinetic energies of the incident ions, the ${\gamma}_i$ increased

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Measurement of Branching Ratio for broad 27-keV Resonance of $^{19}F(n,g)^{20}F$ Reaction by using Time-of-flight Method with Anti-Compton NaI(Tl) Spectrometer

  • Lee, Sam-Yol
    • Journal of the Korean Society of Radiology
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    • v.2 no.1
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    • pp.31-34
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    • 2008
  • The neutron capture spectrum for the light nuclide was very useful to study the nuclear structure. In the present study, the capture gamma-ray from the 27-keV resonance of $^{19}F(n,g)^{20}F$ reaction were measured with an anti-Compton NaI(Tl) spectrometer and the 3-MV Pelletron accelerator of the Research Laboratory for Nuclear Reactors at the Tokyo institute of technology. A neutron Time-of-Flight method was adopted with a 1.5 ns pulsed neutron source by the $^7Li(p,n)^7Be$ reaction. In the present experiment, a Teflon(($CF_2$)n) sample was used The sample was disk with a diameter of 90mm. The thickness of sample was determined so that reasonable counting rates could be obtained and the correction was not so large for the self-shielding and multiple scattering of neutrons in the sample, and was 5mm. The primary gamma-ray transitions were compared with previous measurement of Kenny.

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A Buck-Boost Converter-Based Bipolar Pulse Generator

  • Elserougi, Ahmed A.;Massoud, Ahmed M.;Ahmed, Shehab
    • Journal of Power Electronics
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    • v.17 no.6
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    • pp.1422-1432
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    • 2017
  • This paper presents a buck-boost converter-based bipolar pulse generator, which is able to generate bipolar exponential pulses across a resistive load. The concept of the proposed approach depends on operating the involved buck-boost converters in discontinuous current conduction mode with high-voltage gain and enhanced efficiency. A full design of the pulse generator and its passive components is presented to ensure generating the pulses with the desired specifications (rise time, pulse width, and pulse magnitude) for a given load resistance and input dc voltage. In case of moderate pulsed output voltages (i.e. few of kV), one module of the presented bipolar generator can be employed. While in case of high-voltage pulsed output, multi-module version can be employed, where each module is fed from an isolated dc source and their outputs are connected in series. Simulation models for the proposed approach are built to elucidate their performance in case of one-module as well as multi-module based generator. Finally, a scaled-down prototype for one-module of buck-boost converter-based bipolar pulse generator is implemented to validate the proposed concept.

Unusual Electrical Transport Characteristic of the SrSnO3/Nb-Doped SrTiO3 Heterostructure

  • De-Peng Wang;Rui-Feng Niu;Li-Qi Cui;Wei-Tian Wang
    • Korean Journal of Materials Research
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    • v.33 no.6
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    • pp.229-235
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    • 2023
  • An all-perovskite oxide heterostructure composed of SrSnO3/Nb-doped SrTiO3 was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO3 and Nb-doped SrTiO3 were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

Genomic analysis of Mycobacterium fortuitum by pulsed-field gel electrophoresis (Pulsed-field Gel Electrophoresis를 이용한 Mycobacterium fortuitum의 유전형 분석)

  • Lee, Tae-Yoon;Do, In-A;Kim, Sung-Kwang
    • Journal of Yeungnam Medical Science
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    • v.12 no.2
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    • pp.366-385
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    • 1995
  • Epidemiological studies are important in both the prevention and treatment of mycobacterial infections. This study was initiated to establish the pulsed-field gel electrophoresis (PFGE) method, which are not yet extensively studied. The most apprpriate restriction endonucleases included DraI, AsnI, and XbaI. The optimal PFGE condition was different according to the enzymes used. Two stage PFGE was performed, in case of DraI first stage was performed with 10 seconds of initial pulse and 15 seconds of final pulse, while the second stage was performed with 60 seconds of initial pulse and 70 seconds of final pulse. The electrophoresis time for DraI-PFGE was 14 hours for each stage. Electrophoresis was performed for 22 hours, in case of XbaI, with 3 seconds of initial pulse and 12 seconds of final pulse. Electrophoresis was performed for 22 hours, in case of AsnI, with 5 seconds of initial pulse and 25 seconds of final pulse. In all cases the voltage of the electrophoresis was maintained constantly at 200 voltage. Standard mycobacterial strains, which included Mycobacterium bovis BCG, M. tuberculosis, and M. fortuitum, could not be differentiated by PFGE analysis. PFGE analysis was performed to differentiate 9 clinically isolated M. fortuitum strains using AsnI. All M. fortuitum strains showed different genotypes except 2 strains. Cluster analysis divided M. fortuitum strains into 2 large groups. PFGE analysis was performed to further differentiate M. fortuitum isolates using XbaI. The undifferentiated 2 M. fortuitum strains showed different PFGE patterns with Xba I. Cluster analysis of the XbaI-PFGE patterns showed more complex grouping than AsnI-PFGE patterns, which showed that XbaI-PFGE analysis was better than AsnI-PFGE in M. fortuitum genotyping. The top dissimilarity values of AsnI-PFGE and XbaI-PFGE were 0.74 and 0.75, respectively. This value was higher than that of arbitrarily primed polymerase chain reaction (AP-PCR) analysis and lower than that of restriction fragment length polymorphism (RFLP) analysis. This suggested that PFGE can be used as a supportive or alternative genotyping method to RFLP analysis.

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Enhancement of Response Speed in a-Ge:H Thin Film Semiconductor (수소화된 박막 비정질 Ge 반도체의 전기적 응답속도 향상 방안)

  • 최규남
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.261-264
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    • 1995
  • The response speed enhancement in picosecond photoconductor made from RF planar magnetron sputtered hydrogenated amorphous germanium thin film is discussed. Pulsed laser annealing technique was used to fabricate the highly conductive ohmic contacts and to remove the shallow deflects in the deposited photoconductive film using the different laser powers. Measured V-I curve showed -5 times bigger conductance in photoconductive gap than the one used by the conventional vacuum annealing method using strip heater.

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A new MeSFET channel current model including bias-dependent dispersion effect (바이어스 효과를 포함하는 GaAs MESFET의 새로운 비선형 채널전류 모형)

  • 노태문;김영식;김영웅;박위상;김범만
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.4
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    • pp.17-26
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    • 1997
  • A enw channel current model of GaAs MeSFET suitagle for applications to microwave CAD has been developed. The current model includes the bias-dependent frequency dispersion effects and its parameters are extracted from the pulsed I-V measurements at several quiescent bias points. The model is verified by applying to the nonlinear circuit designs of power amplifier and MMIC mixer.

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FABRICATION OF HIGH QUALITY YBa$_2$Cu$_3$O$_{y}$ THIN FILMS USING PULSED LASER DEPOSITION

  • Lee, Eun-Hong;Park, Sang-Jin;Song, I-Hun;Song, In-Sang;Gohng, Jun-Ho;Sok, Jung-Hyun;Lee, Jo-Won
    • Journal of the Korean institute of surface engineering
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    • v.29 no.5
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    • pp.437-442
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    • 1996
  • High quality $YBa_2Cu_3O_y$(YBCO) thin films for directly coupled dc superconducting quantum interference device (SQUID) were fabricated by pulsed laser deposition. Several critical parameters have been optimized through systematic studies. Thus, the films showing the $T_c$ of above 91K and $J_c$ of above$2\times10^6A/cm^2$ at 77K were routinely obtained. Extensive AFM and X-ray diffraction studies have been conducted for morphological and structural analyses. The directly coupled DC-SQUIDs were fabricated from the YBCO thin films deposited on $SrTiO_3$ bicrystals under the optimized conditions. The measurement on $2I_c$ and swing voltage give 200$\mu$A and 17$\mu$V at 77K, respectively.

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Design of 60KV, 300A, 3kHz Pulse Power Supply (60kV, 300A, 3kHz 펄스전원 장치 설계)

  • Ryoo, H.J.;Jang, S.R.;Kim, J.S.;Rim, G.H.;Gussev, G.I.
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.904-905
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    • 2008
  • In this paper, a novel 60kV, 300A, 3kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and 15kW series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 830VDC, 300A pulses. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used.

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Characteristics of Double-junction of High-$\textrm{T}_{c}$ Superconducting $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$ Step-edge Junctions (고온 초전도 $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$ 계단형 모서리 접합의 이중접합 특성)

  • Hwang, Jun-Sik;Seong, Geon-Yong;Gang, Gwang-Yong;Yun, Sun-Gil;Lee, Gwang-Ryeol
    • Korean Journal of Materials Research
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    • v.9 no.1
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    • pp.86-91
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    • 1999
  • We have fabricated high-$\textrm{T}_c$ superconducting $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$(YBCO) grain boundary junctions at a step-edge on (001) $\textrm{SrTiO}_3$(STO) substrates. A diamond-like carbon (DLC) film grown by plasma enhanced chemical vapor deposition were used as an ion milling mask to make steps on the STO (100) single crystal and was removed by an oxygen reactive ion etch process. The c-axis oriented YBCO and TO thin films were deposited epitaxially on the STO substrate with a step-edge by pulsed laser deposition. The grain boundary junctions were formed at the top and the bottom of the step. The junctions worked at temperatures above 77 K, and had I\ulcornerR\ulcorner products of 7.5mV at 16K and 0.3 mV at 77K, respectively. The I-V characteristics of these junctions showed the shape of the two noisy resistively shunted junction model.

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