• Journal of the Korean Society of Industry Convergence
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• v.26 no.6_2
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• pp.1097-1108
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• 2023

Recently, demand for technology for energy economy and stable supply is increasing due to the increase in power demand of loads. The amount of DC power generation using new and renewable energy is noticeably increasing, and the use of DC power supplies is also increasing due to the increase in electric vehicles and digital loads. During parallel operation to increase the capacity of the power converter, the module bus method or the method using Can communication and serial communication has significant difficulties in smooth operation due to communication time delay for information sharing. Synchronization of information sharing of each power converter is essential for smooth parallel operation, and minimization of communication time delay is urgently needed as a way to overcome this problem. In this paper, a new communication method using pulse width information is proposed as a communication method specialized for parallel operation of power converters to compensate for the disadvantage of communication transmission delay in the existing system. The proposed communication method has the advantage of being easily implemented using the PWM and Capture function of the microcomputer. In addition, the DC/DC converter for DC distribution was verified through simulation and experiment, and it has the advantage of easy capacity expansion when applied to parallel operation of various types of power converters as well as DC/DC converters.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.5
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• pp.587-592
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• 2018

Because the brightness of an AMOLED is determined by the flowing current, each pixel of AMOLED operates via A current driving method. Therefore, it is necessary to supply power to adjust the amount of current according to THE user's requirement for AMOLED driving. In this study, an IP driver block was designed and a simulation was conducted for an AMOLED display, which supplies power as selected by users. The IP driver design focused on regulating the output power due to the OLED characteristics for the diode electric current according to the voltage to be activated by pulse-skipping mode (PSM) under low loads, and 1.5 MHz pulse-width modulation (PWM) for medium/high loads. The IP driver was designed to eliminate the ringing effects appearing from the dis-continue mode (DCM) of the step-up converter. The ringing effects destroy the power switch within the IC, or increase the EMI to the surrounding elements. The IP driver design minimized this through a ringing killer circuit. Mobile applications were considered to enable true shut-down capability by designing the standby current to fall below $1{\mu}A$ to disable it. The driver proposed in this paper can be applied effectively to the same system as the AMOLED display dual power management circuit.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1373_1374
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• 2009

The PLS-II, the major upgrade program of the PLS (Pohang Light Source, a 2.5-GeV 3rd generation light source), is planned at the Pohang Accelerator Laboratory. Given the glaring lack of normative data regarding the PLS-II the major upgrade, this study can be seen as the first in a needed stream of research investigating selection by dual gun and dc electron gun. Usable electron gun can think method to use dual electron gun and method to prove energy by existing electron gun in energy increase. This article is concerned with the formal classification of used of pre-injector electron gun type of the DC and pulse. Design concept wishes to show contents that design for pulse type of power supply and DC type of electron gun.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.415-424
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• 2016

This paper describes a high data rate proximity transmitter design for high resolution smartphone-mirrored display applications. A 2 Gb/s transmitter is designed with a low transmission power of -70 dBm/MHz and a wide bandwidth of nearly 3 GHz. A digital pre-correction method is employed in the transmitter to mitigate the inter-symbol interference problem. A carrier-based digital pulse shaping and a reconfigurable digital envelope generation methods are employed for robust operation by utilizing 20 phases from a 2 GHz phase-locked loop. A 6.5-9.5 GHz transmitter implemented in 65 nm CMOS achieves the maximum data rate of 2 Gb/s, consuming only 7.6 mW from a 1 V supply.

• Korean Journal of Optics and Photonics
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• v.1 no.2
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• pp.169-177
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• 1990

We have constructed the laser system which was consisted of a high voltage pulse poner supply, a rapid high voltage spark gap and the Blumlein transmission line circuit of the multiple parallel plate capacitor type, and have studied the self-preionization effect from this laser system without additional modifications. The value of inductive or resistive loading of the laser oscillator seems to have a significant effect on the preionization. The optimal operational condition of this laser system was obtained at the inductive loading of L = I mtl across the laser tube with the spark gap distance of 6.0 mm. nitrogen pressure of 50 torr, when repetition rate was 70 Hz. Stability was found to be better than 2.0Yo and EIP was 867 V/cm.torr.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.1
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• pp.94-102
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• 2003

This paper describes the load parallel type full-bridge high frequency resonant inverter can be used as power source. Output control method of proposed circuit is compared with pulse frequency modulation(PFM), pulse width modulation(PWM) and pulse phase variation(Phase-Shift). The analysis of the proposed circuit is generally described by using the normalized parameters. The principle of basic operating and the its characteristics are estimated according to the parameters such as switching frequency(${\mu}$), pulse width($\theta$d) the variation of phase angle($\phi$) by three driving signal patterns. Experimental results are presented to verify the theoretical analysis result. In future, Characteristics by three driving signal control method is provided as useful data in case of output control of a power supply in various fields as induction heating application, DC-DC converter etc.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.57-68
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• 2016

In this study, we present the modern hybrid system based power generation for electric vehicle applications. We describe the hybrid structure of modified current source based DC - DC converters used to extract the maximum power from Photovoltaic (PV) and Fuel Cell system. Due to reduced dc-link capacitor requirement and higher reliability, the current source inverters (CSI) better compared to the voltage source based inverter. The novel control strategy includes Distributed Maximum Power Point Tracking (DMPPT) for photovoltaic (PV) and fuel cell power generation system. The proposed DC - DC converters have been analyzed in both buck and boost mode of operation under duty cycle 0.5>d, 0.5<d<1 and 0.5<d for capable electric vehicle applications. The proposed topology benefits include one common DC-AC inverter that interposes the generated power to supply the charge for the sharing of load in a system of hybrid supply with photovoltaic panels and fuel cell PEM. An improved control of Direct Torque and Flux Control (DTFC) based induction motor fed by current source converters for electric vehicle.In order to achieve better performance in terms of speed, power and miles per gallon for the expert, to accepting high regenerative braking current as well as persistent high dynamics driving performance is required. A simulation model for the hybrid power generation system based electric vehicle has been developed by using MATLAB/Simulink. The Direct Torque and Flux Control (DTFC) is planned using Xilinx ISE software tool in addition to a Modelsim 6.3 software tool that is used for simulation purposes. The FPGA based pulse generation is used to control the induction motor for electric vehicle applications. FPGA has been implemented, in order to verify the minimal error between the simulation results of MATLAB/Simulink and experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Journal of Power Electronics
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• v.9 no.1
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• pp.109-116
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• 2009

This paper addresses the output control of a utility-connected double-fed induction machine (DFIM) for wind power generation systems (WPGS). DFIM has a back-to-back converter to control outputs of DFIM driven by the wind turbine for WPGS. To supply commercially the power of WPGS to the grid without any problems related to power quality, the real and reactive powers (PQ) at the stator side of DFIM are strictly controlled at the required level, which in this paper is realized with the Fuzzy PI controller based on the field orientation control. For the Sinusoidal Pulse Width Modulation (SPWM) converter connected to the rotor side of DFIG to maintain the controllability of PQ at the state side of DFIM, the DC voltage of the DC link capacitor is also controlled at a certain level with the conventional Proportion-Integral (PI) controller of the real power. In addition, the power quality at the grid connected to the rotor side of DFIM through the back-to-back converter is maintained in a certain level with a PI controller of the reactive power. The controllers for the PQ at the stator side of DFIM, the DC link voltage of the back-to-back inverter and the reactive power at the grid connected to the rotor side of DFIM are designed and simulated in the PSIM program, of which the result verifies the performance of the proposed controllers.

• Korean Chemical Engineering Research
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• v.56 no.1
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• pp.125-132
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• 2018

The direct synthesis of $C_2$ chemical directly from methane was studied by employing catalysts with ordered mesopores in a dielectric barrier discharge plasma reactor. The reaction was carried out using MgO/OMA (ordered mesoporous alumina), $MgO/{\gamma}-Al_2O_3$ and $MgO/{\alpha}-Al_2O_3$ as catalysts. When MgO/OMA was applied, it showed excellent performance in the plasma reactor using pulse-type power supply and the selectivity of $C_2$ chemicals was measured as 67%. The effects of metal oxide type, textural property of support, alumina phase and power supply type on catalytic performance were investigated especially in terms of $C_2$ chemical formation. BET (Brunauer, Emmett, Teller), X-ray diffraction, transmission electron microscope and thermogravimetric analysis were used to investigate the characterization of the catalyst before and after the reaction.