• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1790-1795
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• 2013

The current velocity and turbulence information in each range cell can be obtained from the first and second Doppler spectrum moment estimates. However, the very widely used correlation method often called as the pulse-pair method has the inherent restrictions under the highly turbulent conditions since it does not satisfy the assumptions that the return Doppler spectrum should be symmetric and have a single peak value. Therefore, in this paper, the quality of pulse-pair estimates were compared with that of FFT estimates for problem analysis using various shapes of simulated Doppler spectra. It can be known that the pulse-pair method often yields meaningless results if the received signals are severely biased or multi-peak Doppler spectra in the Doppler frequency domain.

• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.135-142
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• 2001

Recently, plastic optical fiber draws a lot of attention as a new transmission medium for local area network (LAN) and home network applications. As PMMA based GI-POF (Graded Index Plastic Optical Fiber) has very low loss at about 500 nm and 650 nm wavelengths, it is very important to have a compact ultra short optical pulse source at these wavelength windows. In this paper, we have investigated detailed characteristics of gain switched laser system by using a commercially available low cost RF devices and an InGaAlP Fabry Perot semiconductor laser operating at 650 nm wavelength. The shortest optical 'pulse obtained was 33 psec with 1 GHz repetition rate. Depending on the DC bias current and the modulation frequency, the FWHM and the pulse energy of the gain switched pulses show 33.3-82.8 psec and 0.97-9.69 pI respectively. Also, the spectral bandwidths for CW and gain switched operations are 0.44 nm and 1.50 nm. We believe that these results are quite useful for high bit rate optical transmission applications with PMMA based plastic optical fibers in addition to estimate properties of ultra fast optical components and electro-optic devices. vices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.177-177
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• 2010

티타늄 화합물은 뛰어난 물리적 특성과 인체 무해성을 가지고 있어 생체, 내식 및 내마모 재료 등에 널리 응용되고 있으며, 다양한 색상 구현을 통한 미려한 외관 등 기능성을 위한 표면처리 분야에도 많은 관심을 받고 있다. 이중 질화 티타늄은 금색을 대체할 수 있는 물질로 코팅방법과 기판온도, 바이어스, 질소유량 등과 같은 공정변수 제어를 통해 그 물성을 변화시킬 수 있어 기능적 측면과 함께 미려한 외관처리에 응용이 가능하다. 본 연구에서는 아크(cathodic arc) 코팅 시스템을 이용하여 다양한 조건에서 TiN 박막을 제조하고 그 특성을 평가하였다. 아크 장비는 화합물 박막을 코팅할 수 있는 아크 소스와 시편 홀더, 가스 주입구, 시편 가열장치 그리고 배기 장치로 구성되어 있고, 아크 소스에 장착된 타겟은 99.5%의 Ti 타겟을 사용하였다. 시편과 타겟 간의 거리는 약 31cm이며, 시편은 알코올과 아세톤으로 초음파 세척 된 강판(냉연 강판), 실리콘 웨이퍼를 사용하였다. 시편을 진공용기에 장착하고 ${\sim}10^{-6}$ Torr까지 진공배기를 실시하고, Ar 가스를 진공용기 내로 공급하여 ${\sim}10^{-4}$ Torr에서 시편에 bias (Pulse : 400V)를 인가한 후 아크를 발생시켜 약 5분간 청정을 실시하였다. 플라즈마 청정이 끝나면 시편에 인가된 bias를 차단하고, 질소 유량, 온도, bias, 시간 등의 공정변수에 따라 코팅을 실시하였다. 질소의 유량이 80sccm 일 때, Ti 금속 결정구조가 나타났는데, 이는 질소와 충분하게 반응하지 못한 Ti이 기판에 코팅되어 나타나는 현상으로 판단된다. 색상변화에서는 질소 유량이 증가함에 따라 노란색이 짙어지며, TiN은 시편에 인가되는 bias 전압이 높아질수록 붉은색이 증가하고, 온도에 따른 큰 변화는 관찰되지 않았다. 공정변수에 따른 반사율 변화는 TiN의 경우 질소 가스 유량이 200sccm, bias 150V, 공정 온도 200도에서 반사율이 가장 높았으며, 코팅 시간이 짧을수록 반사율이 높아지는 경향을 나타냈다. 따라서 본 연구에서 얻어진 결과를 외관 코팅 분야에 응용한다면 장식성과 외관의 경도, 내마모성, 내식성의 향상 등 많은 장점을 가질 것으로 예상된다.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.789-798
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• 1996

The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA. $V_{FB}$ measuring system. In the trap density double nitride layer structures were higher by 0.85*10$^{16}$ $m^{-2}$ than one nitride layer structure, and the AVFB with oxide field was linearly increased. However, one nitride layer structure was linearly increased and saturated above 9.07*10$^{8}$ V/m in oxide field. In the erase behavior, the hole injection from silicon instead of the trapped electron emission was observed, and also it was highly dependent upon the pulse amplitude and the pulse width. In the memory retentivity, double nitrite layer structures were superior to one nitride layer structure, and the decay rate of the trapped electron with increasing temperature was low. At increasing the number on BTS, the variance of AVFB of the double nitride layer structures was smaller than that of one nitride layer structure, and the trapped electron retention rate was high. In this paper, the double nitride layer structures were turned out to be useful in improving the nonvolatile memory characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.16-17
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• 2010

Molecular spintronics has attracted attentions, which combines molecular electronics with the spin degree of freedom in electron transport. Among various molecules as candidates of the molecular spintronics, single molecule magnet (SMM) is one of the most promising material. SMM molecules show a ferromagnetic behavior even as a single molecule and hold the spin information even after the magnetic field is turned off. Here in this report, we show the spin behavior of SMM molecules adsorbed on the Au surface by combining the observation of Kondo peak in the STS and ESR-STM measurement. Kondo resonance state is formed near the Fermi level when degenerated spin state interacts with conduction electrons. ESR-STM detects the Larmor frequency of the spin in the presence of a magnet field. The sample include $MPc_2$ and $M_2Pc_3$ molecules ($M\;=\;Tb^{3+}$, $Dy^{3+}$, and $Y^{3+}$ Pc=phthalocyanine) whose critical temperature as a ferromagnet reaches 40 K. A clear Kondo peak was observed which is originated from an unpaired electron in the ligand of the molecule, which is the first demonstration of the Kondo peak originated from electron observed in the STS measurement. We also observed corresponding peaks in ESR-STM spectra. [1] In addition we found that the Kondo peak intensity shows a clear variation with the conformational change of the molecule; namely the azimuthal rotational angle of the Pc planes. This indicates that the Kondo resonance is correlated with the molecule electronic state. We examined this phenomena by using STM manipulation technique, where pulse bias application can rotate the relative azimuthal angle of the Pc planes. The result indicates that an application of ~1V pulse to the bias voltage can rotate the Pc plane and the Kondo peaks shows a clear variation in intensity by the molecule's conformational change.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.14-21
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• 2009

In this paper, a Ka-band 10 W power amplifier module with seven power MMIC bare dies is designed and fabricated using MIC technology which combines multiple MMIC chips on a thin film substrate. Modified Wilkinson power dividers/combiners and CBFGCPW-Microstrip transitions for suppressing resonance and reducing connection loss are utilized for high-gain and high-power millimeter wave modules. A new TTL pulse timing control scheme is proposed to improve output power degradation due to large bypass capacitors in the gate bias circuit. Pulse-mode operation time is extended more than 200 nsec and output power increase of 0.62 W is achieved by applying the proposed scheme to the Ka-band 10 W power amplifier module operating in the pulsed condition of 10 kHz and $5\;{\mu}sec$. The implemented power amplifier module shows a power gain of 59.5 dB and an output power of 11.89 W.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.4
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• pp.307-313
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• 2019

The traveling wave tube amplifier (TWTA), which can be applied to the Ka-band millimeter-wave multi-mode seeker, consists of an high voltage power supply(HVPS), a grid modulator, a command and control, and an RF assembly. We designed a power supply that generates a -17.9 kV high voltage by synchronizing the pulse repetition frequency(PRF) and power supply switching frequency(i.e. synchronization frequency), and a high-speed grid-switching modulator for RF pulse modulation. The TWTA, which is fabricated through miniaturization with a volume of 3.18 L, has high pulse switching characteristics of up to 18.5 ns. The maximum rise/fall time of the grid on/bias signal and peak power is more than 564.9 W. Moreover, an excellent spurious performance of -68.4 dBc or less was confirmed within the range of PRF and PRF/2.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.12
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• pp.1324-1335
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• 1991

In this paper, a phoneme separation and an establishment of discriminative pattern of Korean phonemes are studied on experiment. The separation uses parameters such as pitch extraction, glottal peak pulse width of each pitch. speech duration. envelope and amplitude bias. The first pitch is extracted by deviations of glottal peak and width. energy and normalization on a bias on the top of vowel envelope. And then, it traces adjacent pitch to vowel in whole. On vewel, amethod to be reduced gliding pattern and the possible of vowel distinction to be used just second formant are proposed, and shrinking pitch waveform has nothing to do with pitch length is estimated. A pattern of envelope, spectrum, shrinking waveform, and a method of analysis by mutual relation among phonemes and manners of articulation on consonant are detected. As experimental results, 90% on vowel phoneme, 80% and 60% on initial and final consonant are discriminated.

• ETRI Journal
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• v.39 no.2
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• pp.292-299
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• 2017

We propose pulse-mode dynamic $R_on$ measurement as a method for analyzing the effect of stress on large-scale high-power AlGaN/GaN HFETs. The measurements were carried out under the soft-switching condition (zero-voltage switching) and aimed to minimize the self-heating problem that exists with the conventional hard-switching measurement. The dynamic $R_on$ of the fabricated AlGaN/GaN MIS-HFETs was measured under different stabilization time conditions. To do so, the drain-gate bias is set to zero after applying the off-state stress. As the stabilization time increased from $ 0.1{\mu}s$ to 100 ms, the dynamic $R_on$ decreased from $160\Omega$ to $2\Omega$. This method will be useful in developing high-performance GaN power FETs suitable for use in high-efficiency converter/inverter topology design.

• Progress in Superconductivity
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• v.4 no.1
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• pp.42-47
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• 2002

Measuring magnetic fields with a SQUID sensor always requires preliminary adjustments such as optimum bas current determination and flux-locking point search. A conventional magnetoencephalography (MEG) system consists of several dozens of sensors and we should condition each sensor one by one for an experiment. This timeconsuming job is not only cumbersome but also impractical for the common use in hospital. We had developed a serial port communication protocol between SQUID sensor controllers and a personal computer in order to control the sensors. However, theserial-bus-based control is too slow for adjusting all the sensors with a sufficient accuracy in a reasonable time. In this work, we introduce programmatic control sequence that saves the number of the control pulse arrays. The sequence separates into two stages. The first stage is a function for searching flux-locking points of the sensors and the other stage is for determining the optimum bias current that operates a sensor in a minimum noise level Generally, the optimum bias current for a SQUID sensor depends on the manufactured structure, so that it will not easily change about. Therefore, we can reduce the time for the optimum bias current determination by using the saved values that have been measured once by the second stage sequence. Applying the first stage sequence to a practical use, it has taken about 2-3 minutes to perform the flux-locking for our 37-channel SQUID magnetometer system.