• Medical Lasers
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• 제8권1호
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• pp.28-31
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• 2019

Superficial fungal infections with dermatophytes, nondermatophyte molds, or yeasts are treated primarily with topical and/or systemic antifungal agents. Additional or alternative treatment modalities, particularly energy-delivering modalities, however, are used widely to induce fungicidal effects via selective photothermal reactions. In addition to light- or laser-based devices, plasma therapy also has antifungal properties. This report describes a Korean male patient with mycologically confirmed tinea pedis that was treated effectively with two sessions of nitrogen plasma treatment at one-week intervals using a plasma delivering system. Nitrogen plasma was prepared by loading a 0.28-ml inert nitrogen gas/pulse that was activated by a microwave generator. The other treatment settings were a nozzle diameter of 5 mm, pulse energy of 0.75 J, pulse duration of 7 msec, and two passes. One week after the first session of nitrogen plasma treatment, the patient exhibited marked reductions in scale and inflammation. One month after the final treatment, no clinical features of recurrence were found, and successive potassium hydroxide testing revealed negative results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.423-426
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• 1991

A Plasma Display Panel with Double Pulse Memory was fabricated and its luminance and luminous efficacy were investigated. Application of non-discharge pulses to an auxiliary anode increased luminance by 43% and luminous efficacy by 33%. Compared to PDP with PPM(Planar Pulse Memory) driving technique, PDP with DPM obtained higher luminous efficacy and consumed lower power with the same delay time.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.333-333
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• 2011

We have investigated the breakdown properties in liquids by high voltage pulse system. High voltage pulse power system is consisted of the Marx-generator with two capacitors (0.5 ${\mu}F$, withstanding voltage is 40 kV), to which the charging voltage can be applied to maximum 30 kV DC, spark gap switch and charging resistor of 20 $M{\Omega}$. We have made use of tungsten pin electrodes of anode-cathode (A-K), which are immersed into the liquids. The breakdown voltage and current signals are measured by high voltage probe (Tektronix P6015A) and current monitor (IPC CM-1.S). Especially the high speed breakdown or plasma propagation characteristics in the pulsed A-K gap have been investigated by using the high speed ICCD camera. We have measured the electron temperature through the Boltzmann plot method from the breakdown spectrums. Here the A-K gap has been changed by 1 mm, 2 mm, and 3 mm. The used liquids are distilled water and solution of salt (0.9 %). The output voltage and current signals at breakdown in distilled water are shown to be bigger than those in saline solution. The breakdown voltage and current characteristics in liquids will be discussed in accordance with A-K gap distances. It is also found that the electron temperatures and plasma densities in liquids are decreased in conformity with A-K gap.

• 한국재료학회지
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• 제13권4호
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• pp.271-278
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• 2003

Conventional backlight for liquid crystal display (LCD) uses mercury which leads to environmental pollution. In this study, characteristics of AC coplanar type mercury-free plasma flat lamp have been studied. Pollution-free Xe-He is adopted as a discharge gas system. Since the Xe gas has a lower efficiency in generating vacuum ultraviolet (VUV) than mercury, the improvement of luminance and luminous efficiency in the Xe gas system is very important. The electrode, dielectric, and phosphor layers constituting lamp are formed on the bottom glass by the screen printing method. The effects of pulse shape, on-time, and pulse frequency on the luminance and luminous efficiency have been examined. For Xe(5%)-He gas, the lamp exhibits higher efficiency with sharper pulse shape, higher peak voltage, and shorter pulse on-time (up to 2 $\mu\textrm{s}$). Higher efficiency and lower consumption of power were obtained at 30 kHz than at 60 kHz. The collision of ion to bottom electrodes is a dominant factor to raise the lamp temperature. Therefore the high voltage and low current discharge system is necessary for reduction of the lamp temperature as well as for enhancement of the luminous efficiency.

• 한국재료학회지
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• 제30권6호
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• pp.321-325
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• 2020

The present study demonstrates the effect of magnetic pulse compaction and spark plasma sintering on the microstructure and mechanical property of a sintered W body. The relative density of green specimens prepared by magnetic pulse compaction increases with increase in applied pressure, but when the applied pressure is 3.4 GPa or more, some cracks in the specimen are observed. The pressureless-sintered W shows neck growth between W particles, but there are still many pores. The sintered body fabricated by spark plasma sintering exhibits a relative density of above 90 %, and the specimen sintered at 1,600 ℃ after magnetic pulse compaction shows the highest density, with a relative density of 93.6 %. Compared to the specimen for which the W powder is directly sintered, the specimen sintered after magnetic pulse compaction shows a smaller crystal grain size, which is explained by the reduced W particle size and microstructure homogenization during the magnetic pulse compaction process. Sintering at 1,600 ℃ led to the largest Vickers hardness value, but the value is slightly lower than that of the conventional W sintered body, which is attributed mainly to the increased grain size and low sintering density.

• Transactions on Electrical and Electronic Materials
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• 제6권6호
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• pp.276-279
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• 2005

Influences of sustain pulse-width on electrical characteristics and luminous efficiency are experimentally investigated for surface discharge of AC-PDP. A square pulse with variable duty ratio and fixed rising time of 300 ns has been used in the experiment. It is found that the memory coefficient is significantly increased at the critical pulse-width. And the wall charges and wall voltages as well as capacitances are experimentally measured by Q- V analysis method along with the voltage margin relation, in terms of the sustain pulse-width in the range of $1{\mu}s$ to $5{\mu}s$ under driving frequency of 10 kHz to 180 kHz. And the luminous efficiency is also experimentally investigated in above range of sustain pulse-width with driving frequency of 10 kHz to 180 kHz. It is noted that the luminous efficiency for 10 kHz and 180 kHz are 1.29 1m/W and 0.68 1m/W respectively, since the power consumption for 10 kHz is much less than that for 180 kHz. It has been concluded that the optimal sustain pulse-width is in the range of $2.5 {\~}4.5{\mu}s$ under driving frequency range of 10 kHz and 60 kHz, and in the range of $1.5 {\~} 2.5{\mu}s$ under driving frequency range of 120 kHz and 180 kHz based on observation of memory coefficient, and wall voltage as well as luminous efficiency.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년도 춘계 학술대회 개요집
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• pp.289-291
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• 2006

• 한국진공학회지
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• 제8권3B호
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• pp.361-367
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• 1999

It was observed that the time-dependent sheath which was formed around the planar target biased by negatively voltage pulse with a finite rise time in the plasma source ion implantation. F\Results show that the time-dependent sheath consisted of two parts: the ion matrix sheath development during the pulse rise time and the dynamic sheath motion after attaining the full pulse. The ion matrix sheath development which is in proportion to square root of the pulse time and the pulse rise rate over the plasma density but independent of the ion mass. The dynamic sheath propagates with approximately the ion sound speed.

• Journal of the Optical Society of Korea
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• 제13권1호
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• pp.80-85
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• 2009

An experimental study of energy absorption and x-ray emission from ultrashort laser pulse irradiation of in-situ produced solid clusters has been performed. Silver clusters produced by a 30 mJ, 300 ps laser pulse were irradiated up to an intensity of $3{\times}10^{17}\;W/cm^2$ by a 70 mJ, 45 fs compressed laser pulse from the same Ti:sapphire laser. Absorption of the laser light exceeding 70% was observed, resulting in an x-ray yield (>1 keV) of ${\sim}60{\mu}J$ pulse. This may constitute a much simpler means of intense x-ray generation using ultrashort laser pulses as compared to the irradiation of structured / pre-deposited cluster targets, and it offers higher x-ray conversion efficiency than that from gas clusters and planar solid targets.