• Title/Summary/Keyword: Pulse Input Method

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Analysis of Cyclic Adenosine Monophosphate (cAMP) Separation via RP-HPLC (reversed-phase high-performance liquid chromatography) by the Moment Method and the van Deemter Equation (역상 크로마토그래피에서 모멘트 방법과 van Deemter 식을 이용한 고리형 아데노신 일인산의 분리특성 연구)

  • Lee, Il Song;Ko, Kwan Young;Kim, In Ho
    • Korean Chemical Engineering Research
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    • v.53 no.6
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    • pp.723-729
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    • 2015
  • The moment analysis of cyclic adenosine monophosphate (cAMP) was performed using chromatograms that were obtained with the pulse input method from an octadecyl silica (ODS) high-performance liquid chromatography (HPLC) column. The general rate (GR) model was employed to calculate the first absolute moment and the second central moment. Three important coefficients for moment analysis, which are molecular diffusivity ($D_m$), external mass transfer coefficient ($k_f$), and intra-particle diffusivity ($D_e$), were estimated by the Wilke-Chang equation, Wilson-Geankoplis equation, and comparing van Deemter equation to theoretical plate number equation, respectively. Experiments were conducted by various conditions of flow rates, methanol volume ratio of the mobile phase, and solute concentration. After the moment analysis, results were organized by van Deemter plots. Also van Deemter coefficients were compared each other to effect $H_{ax}$, $H_f$, and $H_d$ on height equivalent to a theoretical plate (HETP, $H_{total}$). The value of intraparticle diffusion ($H_d$) was the primary factor which makes for HETP whereas external mass transfer ($H_f$) was disregardable factor.

Design of X-band 40 W Pulse-Driven GaN HEMT Power Amplifier Using Load-Pull Measurement with Pre-matched Fixture (사전-정합 로드-풀 측정을 통한 X-대역 40 W급 펄스 구동 GaN HEMT 전력증폭기 설계)

  • Jeong, Hae-Chang;Oh, Hyun-Seok;Yeom, Kyung-Whan;Jin, Hyeong-Seok;Park, Jong-Sul;Jang, Ho-Ki;Kim, Bo-Kyun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.11
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    • pp.1034-1046
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    • 2011
  • In this paper, a design and fabrication of 40 W power amplifier for the X-band using load-pull measurement of GaN HEMT chip are presented. The adopted active device for power amplifier is GaN HEMT chip of TriQuint company, which is recently released. Pre-matched fixtures are designed in test jig, because the impedance range of load-pull tuner is limited at measuring frequency. Essentially required 2-port S-parameters of the fixtures for extraction optimal input and output impedances is obtained by the presented newly method. The method is verified in comparison of the extracted optimal impedances with data sheet. The impedance matching circuit for power amplifier is designed based on EM co-simulation using the optimal impedances. The fabricated power amplifier with 15${\times}$17.8 $mm^2$ shows the efficiency above 35 %, the power gain of 8.7~8.3 dB and the output power of 46.7~46.3 dBm at 9~9.5 GHz with pulsed-driving width of 10 usec and duty of 10 %.