• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.62-62
• /
• 2008

As micro-system move toward higher speed and miniaturization, requirements for embedding the passive components into printed circuit boards (PCBs) grow consistently. They should be fabricated in smaller size with maintaining and even improving the overall performance. Miniaturization potential steps from the replacement of surface-mount components and the subsequent reduction of the required wiring-board real estate. Among the embedded passive components, capacitors are most widely studied because they are the major components in terms of size and number. Embedding of passive components such as capacitors into polymer-based PCB is becoming an important strategy for electronics miniaturization, device reliability, and manufacturing cost reduction Now days, the dielectric films deposited directly on the polymer substrate are also studied widely. The processing temperature below $200^{\circ}C$ is required for polymer substrates. For a low temperature deposition, bismuth-based pyrochlore materials are known as promising candidate for capacitor $B_2Mg_{2/3}Nb_{4/3}O_7$ ($B_2MN$) multi layers were deposited on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system at room temperature. The physical and structural properties of them are investigated by SEM, AFM, TEM, XPS. The dielectric properties of MIM structured capacitors were evaluated by impedance analyzer (Agilent HP4194A). The leakage current characteristics of MIM structured capacitor were measured by semiconductor parameter analysis (Agilent HP4145B). 200 nm-thick $B_2MN$ muti layer were deposited at room temperature had capacitance density about $1{\mu}F/cm^2$ at 100kHz, dissipation factor of < 1% and dielectric constant of > 100 at 100kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.12
• /
• pp.1077-1082
• /
• 2008

To fabricate a multi-layered piezoelectrics/electrodes structure, the piezoelectrics should be sintered at the temperature lower than $950^{\circ}C$ to use the silver electrode, which is cheaper than the electrodes containing noble metals such as Pd and Pt. Therefore, in this study, we modified the composition of $Pb(Zr,Ti)O_3$-based material as $(Pb_{0.98}Cd_{0.02})(Ni_{1/3}Nb_{2/3})_{0.25}Zr_{0.35}Ti_{0.4}O_3$ to lower the sintering temperature and to improve the piezoelectric properties. Small amount of $MnCO_3$, $SiO_2$, and $Pb_3O_4$ were also added to lower the sintering temperature of the ceramic. The prepared raw powders were mixed by using a ball mill for 24 hours. And then the mixed powders were calcinated for 2 hours at $800^{\circ}C$. The calcinated powders were again crushed with the ball mill for 72 hours. The final powders were pressed for making the shape of ${\emptyset}15\;mm$ disk. The disk-type samples were sintered at temperature range of $850{\sim}950^{\circ}C$. The crystal phases of the sintered specimens were perovskite structure without secondary phases. All of the measured electrical properties such as electromechanical coupling coefficients ($k_p$), mechanical quality factors ($Q_m$), and piezoelectric charge constants ($d_{33}$) were decreased with decreasing the sintering temperatures. The electrical properties measured at the sample sintered at $950^{\circ}C$ were 54% of $k_p$, 503 of $Q_m$, and 390 pC/N of $d_{33}$, respectively. These properties were considered to be fairly good for the application of multi-layered piezoelectric generators or actuators.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.390-390
• /
• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.6
• /
• pp.241-245
• /
• 2007

[ $(Ba_{0.9-x}Sr_xCa_{0.10})TiO_3$ ] (x=0.33, 0.36) powders were prepared by sol-gel method. $(Ba,Sr,Ca)TiO_3$(BSCT) thick films, undoped and doped with $MnCO_3$ and $Yb_2O_3(0.1{\sim}0.7mol%)$, were fabricated by the screen printing method on the alumina substrate. The coating and drying procedure was repeated 6-times. The Pt bottom electrode was screen printing method on the alumina substrate. These BSCT thick films were annealed at $1420^{\circ}C$ for 2 hr in atmosphere. The upper electrodes were fabricated by screen printing the Ag paste and then firing at $590^{\circ}C$ for 10 min. And then the structured and dielectric properties as a function of the doping amount of $Yb_2O_3$ were studied. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed XRD patterns of typical cubic peroveskite structure. The average thickness of BSCT thick films was about $70^{\mu}m$. The curie temperature and the dielectric constant decreased with increasing $Yb_2O_3$ doped content and the relative dielectric constant of the specimen, doped with 0.5 mol% $Yb_2O_3$ at BSCT(54/36/10), showed a best value of 5018 at curie temperature.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1283-1284
• /
• 2007

The barium strontium calcium titanate((Ba,Sr,Ca)$TiO_3$) powders prepared by the sol-gel method and $MnCO_3$ as acceptor were mixed oxide method. The microstructure was investigated with variation of $Pr_{2}O_{3}$ amount. The BSCT powder and $Pr_{2}O_{3}$ were mixed with organic vehicle(Ferro. B75001). BSCT thick films were fabricated by the screen-printing method on alumina substrates. The bottom electrode was Pt and upper electrode was Ag, respectively. All BSCT thick films were sintered at $1420^{\circ}C$, for 2h. The result of the differential thermal analysis(DTA), exothermic peak at around $654^{\circ}C$ due to the formation of the polycrystalline perovskite phase. In the X-ray diffraction(XRD) patterns, all BSCT thick films showed the typical perovskite polycrystalline structure and no pyrochlore phase was dbserved. The microstructure investigated by scanning electron microscope(SEM). Pore and grain size of BSCT thick films were decreased with increasing amount of $Pr_{2}O_{3}$ dopant. And the average grain size and thickness of BSCT thick films doped with 0.1 mol% $Pr_{2}O_{3}$ was $3.09{\mu}m$, $60{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss decreased with increasing amount of $Pr_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Pr_{2}O_{3}$ were 7443 and 4 % at 1 kHz, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.873-876
• /
• 2000

Characteristics of piezoelectric thick films prepared by screen printing method were investigated. The piezoelectric thick films were printed using Pb(Mg,Nb)O$_3$-Pb(Zr,Ti)O$_3$system. The lower electrodes were coated with various thickness of Ag-Pd by screen printing to investigate the effect as a diffusion barrier and deposited with Pt by sputtering on Ag-Pd. The ceramic paste was prepared by mixing powder and binder with various ratios using three roll miller. The fabricated thick films were burned out at 650$^{\circ}C$ and sintered at 950$^{\circ}C$ in the O$_2$condition for each 20, 60min after printing with 350mesh screen. The thickness of piezoelectric thick film was 15∼20 $\mu\textrm{m}$ and the Ag-Pd electrode acted as a diffusion barrier above 3 $\mu\textrm{m}$ thickness. When the lower electrode Ag-Pd was 6 $\mu\textrm{m}$ and the piezoelectric thick films were sintered by 2nd step (650$^{\circ}C$/20min and 950$^{\circ}C$/1h) using paste mixed Pb(Mg,Nb)O$_3$-Pb(Zr,Ti)O$_3$$.$ MnO$_2$+ Bi$_2$O$_3$. V$_2$O$\_$5/ and binder in the ratio of 70:30, the remnant polarization of thick film was 9.1 ${\mu}$C /cm$^2$.