• Journal of the Korean Ceramic Society
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• v.43 no.7 s.290
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• pp.389-392
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• 2006

Electric field-induced phase transition from the tetragonal to rhombohedral phase was investigated for the <111> direction in tetragonal PZN-PT single crystals, which have spontaneous polarization along the <001> direction. From the strain and dielectric data, it was confirmed that the samples followed a tetragonal-orthorhombic-rhombohedral phase transition sequence with application of an electric field. This transition is different from the rhombohedral-tetragonal phase transition of <001> rhombohedral composition single crystals, in which a phase transition occurred without showing the intermediate orthorhombic phase.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.351-356
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• 1996

The quartemary system ceramics 0.5[xPb(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-(1-x)Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_{3}$]-0.5[yPbTiO$_{3}$-(1-y) PbZrO$_{3}$ for piezoelectric actuators were prepared bv the were added to the raw materials up to 5 mole. Sintering temperature was varied form 1000.deg. C to 1200.deg. C. Sintering characteristrics, dielectric and piezoelectric properties were then investigated. Piezoelectric properties of sample prepared by the molten salt method were improved compared to those prepared by the conventional method. Addition of PZN shifted morphotropic phase boundary to more Zr-rich composition and decreased the piezoelectric properties.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.680-687
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• 2006

An overview is given to optimize the solid state processes toward phase pure and well-crystallized fine particulates of mixed oxides, serving as electroceramic materials in various genres. Elevation of the reactivity and preservation of stoichiometry of the starting mixture are of universal importance. Mechanical activation is versatile for these purposes, particularly when an oxygen atom as a hinge promotes formation of hetero-bridging bonds between dissimilar cationic species prior to calcination. Case studies carried out recently in the author's laboratory are displayed and compared for ferroelectric materials, i.e. $PbMg_{1/3}Nb_{2/3}O_3$ $xPbTiO_3$(PMN-PT), $(1-y)Pb(Zn_xMg{1-x})_{1/3}$ $yNb_{2/3}O_3$ (PZN-PMN), $BaBi_2Ta_2O_9$ (BBT), $Ba(Mg_{1/3}Ta_{2/3})O_3$ (BMT), and ferromagnetics, i.e. M-, Y-, and Z-phases of Ba-hexaferrites.

• Applied Microscopy
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• v.29 no.4
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• pp.471-477
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• 1999

Microstructural observations on the pyrochlore-type $Lu_2Ti_2O_7$ and the similar type of compounds, $In_2(Ti_{1.7}Zn_{0.3})O_{6.7}$ and $In_2(Ti_{1.7}Mg_{0.3})O_{6.7}$ which were made by the isothermal heat-treatment at 1623K for 18 days in Pt tube, were carried out using a top-entry HRTEM working at 200 kV. The modulated structures were found in both compounds, however, not in $Lu_2Ti_2O_7$. From the electron diffraction pattern analysis, the modulated superlattices are incommensurate and are 2.69 times of sublattices along (220) direction. The high resolution TEM images have shown that the superlattices consist of alternate superlattices which are composed of two or three sublattices, resulting in the average of 2.7 times of sublattices in accordance with the analysis of electron diffraction patterns. The crystal structures of both compounds are found to quite similar to those of pyrochlore, however the evidence that the cubic axes are slightly deviated from right angle. The modulated structure has gradually changed to the unmodulated structure induced by electron irradiation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.10-10
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• 2009

Transparent BNO thin films were grown on Al-doped ZnO (AZO)/Ag/AZO/polyethersulfon (PES) (abbreviated as AAAP) transparent electrodes at a low temperature by the NCD technique. The BNO films grown on the crystallized AZO/Ag/AZO (AAA) electrodes exhibit an amorphous phase with a root mean square (rms) roughness of approximately 2 nm in the range of deposition temperature. The capacitors (Pt/BNO/AAAP) with BNO films grown at $100^{\circ}C$ show a dielectric constant of 24 and dissipation factor of 8% at 100 kHz, a leakage current density of about $8{\times}10^{-6}A/cm^2$ at an applied voltage of 1.0V. The optical transmittances of the BNO/AAAP exhibited above 80% at wavelength of 550nm at all of deposition temperature. The mechanical stability of the BNO/AAA as well as AAA electrode with the PES substrates through the bending was ensured for flexible electronic device applications. The transparent BNO capacitors grown on AAAP are powerful candidate for integration with the transparent solar cells.