• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.657-663
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• 1993

BaTiO3 sputtering targets of 3 inch diameter were prepared by sintering the CIP (Cold Isotatic Pressing) compacts at 136$0^{\circ}C$ for 3hrs. The apparent density and grain size were 97% and 30${\mu}{\textrm}{m}$, respectively. After BaTiO3 films were deposited on Si and Pt/Ti/SiO2/Si substrates using these targets, films were annealed at various conditions and the crystallization behavior, reaction with the substrate and the electrical properties were investigated. The films on both substrates required 5~20hrs furnace annealing for crystallization at the temperatures from $600^{\circ}C$ to 80$0^{\circ}C$. For the films on Si substrate, interaction between the film and the substrate was suppressed upt o $700^{\circ}C$ for 10 hrs and the relative dielectric constant was 30. As the annelaing temperature and time were increased, the relative dielectric constants of the films decreased due to the formation of silicate phases through the reaction with the substrate. For the BaTiO3 films on Pt/Ti/SiO2/Si substrate, the reaction with the substrate was further reduced when the annealing condition was identical to that for Si substrate, but the reaction between the layers in Pt electrode took place above $700^{\circ}C$. When the films were annealed at $600^{\circ}C$ where the stability of Pt electrode was sustained, relative dielectric constant was increased to 110 since the reaction with substrate was effectively reduced even for a longer annealing time and the crystallization was enhanced.

• Journal of the Korean Electrochemical Society
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• v.2 no.4
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• pp.202-208
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• 1999

Composite cathodes of $50/50\;vol\%$ LSM-YSZ $(La_{-x}Sr_xMnO_3-yttria\;stabilized\;zirconia)$ were deposited onto dense YSZ electrolytes by colloidal deposition technique. The cathode characteristics were then examined by scanning electron microscopy (SEM) and studied by ac-impedance spectroscopy (IS). The conditioning effects on LSM-YSZ cathodes were seen and remedies for these effects were noted in order to improve the performance of a solid oxide fuel cell (SOFC). The effects of temperature on impedance, surface contamination on cathode bonding to YSZ electrolyte, changing Pt paste, aerosol spray technique applied to curved surface on microstructure and cell to cell variability were solved by testing at $900^{\circ}C$, sanding the YSZ surface, using only one batch of Pt paste, using flat YSZ plates and using consistent procedures and techniques, respectively. And then, reproducible impedance spectra were confirmed by using the improved cell and the typical spectra measured for an (air)LSM-YSZ/YSZ/LSM-YSZ(air) cell at $900^{\circ}C$ were composed of two depressed arcs. Impedance characteristics of the LSM-YSZ cathodes were also affected by experimental conditions such as catalytic interlayer, composite cathode compositions and applied current.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.290-293
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• 2001

The SrBi$_2$Nb$_2$O$_{9}$ (SBN) thin films were deposited on p-type(100) Si substrates by rf magnetron sputtering to confirm the Possibility of Pt/SBN/Si structure for the application of nondestructive read out ferroelectric random access memory (NDRO- FRAM). The SBN thin films were deposited by co-sputtering method with Sr$_2$Nb$_2$O$_{7}$ (SNO) and Bi$_2$O$_3$ ceramic targets. The SBN thin films deposited at room temperature were annealed at $700^{\circ}C$ for 1hr in $O_2$ ambient. The structural and electrical properties of SBN with different power ratios of targets were measured by x-ray diffraction(XRD), scanning electron microscopy(SEM), capacitance-voltage(C-V), and current-voltage(I-V). The C-V curves of the SBN films showed hysteresis curves of a clockwise rotation showing ferroelectricity. When the Power ratio of the SNO/Bi$_2$O$_3$ targets was 120 W/100 W, the SBN thin films had excellent electrical properties. The memory window of SBN thin film was 1.8 V-6.3 V at applied voltage of 3 V-9 V and the leakage current density was 1.5 $\times$ 10$^{-7}$ A/$\textrm{cm}^2$ at applied voltage of 5 V The composition of SBN thin films was analysed by electron probe X-ray micro analyzer(EPMA) and the atomic ratio of Sr:Bi:Nb with pawer ratio of 120 W/100 W was 1:3:2.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.190-194
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• 2008

Epitaxial $L1_0$ FePd (001) thin films were successfully manufactured by sputtering deposition method. The structure and magnetic properties of FePd thin films were characterized as a function of Fe compositions. It was found that the long-range ordering parameter had a maximum for the stoichiometric composition, whereas the magnetic anisotropy had a maximum as the Fe content is decreased to slightly above the stoichiometric composition. This indicates that the stoichiometry is directly contributed to the chemical ordering and the magnetic anisotropy. These results imply that nonstoichiometric FePd compositions, with a slight excess of Pd, may in fact be preferred for applications that require high magnetic anisotropy.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.103-110
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• 1998

Pyroelectric infrared detectors based on La-modified $PbTiO_{3}$ (PLT) thin films have been fabricated by RF magnetron sputtering and rnicrornachining technology. The detectors form $Pb_{l-x}La_{x}Ti_{1-x/4}O_{3}$ (x=0.05) thin film ferroelectric capacitors epitaxially grown by RF magnetron sputtering on Pt/MgO (100) substrate. The sputtered PLT thin film exhibits highly c-axis oriented crystal structure that no poling treatment for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency. Polymide is coated on top of the sensing elements to support the fragile structure and the backside of the MgO substrate is selectively etched to reduce the heat loss. The sensing element exhibited a very high detectivity D* of $8.5{\times}10^{8}cm{\cdot}\sqrt{Hz}/W$ at room temperature and it is about 100 times higher than the case of micromachining technology is not used. A sensing system that detects the position as well as the existence of a human body is realized using the array sensor.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.291-294
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• 2014

In this study, a chemiresistive sensor based on one-dimensional $WO_3$ nanostructures is presented for application in non-invasive medical diagnostics. $WO_3$ nanostructures were used as an active gas sensing layer and were deposited onto a $SiO_2/Si$substrate using Pt interdigitated electrodes (IDEs). The IDE spacing was $5{\mu}m$ and deposition was performed using RF sputter with glancing angle deposition mode. Pt IDEs fabricated by photolithography and dry etching. In comparison with thin film sensor, sensing performance of nanostructure sensor showed an enhanced response of more than 20 times when exposed to 50 ppm acetone at $400^{\circ}C$. Such a remarkable faster response can pave the way for a new generation of exhaled breath analyzers based on chemiresistive sensors which are less expensive, more reliable, and less complicated to be manufactured. Moreover, presented sensor technology has the potential of being used as a personalized medical diagnostics tool in the near future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.252-252
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• 2008

The microhotplates consisting of a Pt-ased heating element on AlN/poly 3C-SiC layers were fabricated. The microhotplate has a $600{\mu}m{\times}600{\mu}m$ square shaped membrane which made of $1{\mu}m$ thick ploycrystalline 3C-SiC suspended by four legs. 3C-SiC is known for excellent chemical durability, mechanical strength and sustaining of high temperature. The membrane is fabricated by surface micromachining using oxidized Si sacrificial layer. The Pt thin film is used for heating material and resist temperature sensor. The fabrication methodology allows intergration of an array of heating material and resist temperature detector. For reasons of a short response time and a high sensitivity a uniform temperature profile is desired. The dissipation of microhotplate was examined by a IR thermoviewer and the power consumption was measured. Measured and simulated results are compared and analyzed. Thermal characterization of the microhotplates shows that significant reduction in power consumption was achieved using suspended structure.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.472-478
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• 1998

Ferroelectric SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si substrates at 50$0^{\circ}C$ using a sintered SBT target Bi and Ta targets by modified rf magnetron sputtering and then were annealed at 80$0^{\circ}C$ for 10min in oxygen ambinet(760 torr) The composition of the SBT films could be easily controlled using the mul-ti-targets. The film composition of {{{{ {Sr }_{0.8 } {Bi }_{2.9 } {Ta}_{2.0 } {O }_{9 } }} was obtained with SBTd sputtering power of 100 W Bi of 25W and Ta of 10 W. A 250nm thick SBT films exhibited a dense and uniform microstructure and showed the remanent polarization(Pr) of 14.4 $\mu$C/cm2 and the coercive field({{{{ {E }_{c } }})of 60 kV/cm at applied voltage of 5 V. The SBT films show practically no polarization fatigue up to {{{{ {10 }_{10 } }} cycles under 5V bipolar pulse. The retention characteristics of the SBT films looked very promising and the leakage current density of the SBT films was about 1.23$\times${{{{ {10 }^{-7 } }}A/c{{{{ {m }^{2 } }} at 120kV/cm.