• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.751-757
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• 2000

The r.f. power effect for Pt doping is investigated on structural and electrochemical properties of amorphous vanadium oxide(V$_2$O$_{5}$) film, grown by direct current (d.c.) magnetron sputtering. Room temperature charge-discharge measurements based on a half-cell with a constant current clearly indicated that the Pt doping could improve the cyclibility of V$_2$O$_{5}$ cathode film. Using glancing angle x-ray diffraction(GXRD) and high-resolution transmission electron microscopy (HRTEM) analysis, we found that the Pt doping with 10W r.f. power induces more random amorphous structure than undoped V$_2$O$_{5}$ film. As the r.f. power of Pt target increases. large amount of Pt atoms incorporates into the amorphous V$_2$O$_{5}$ film and makes $\alpha$-PtO$_2$microcrystalline phase in the amorphous V$_2$O$_{5}$ matrix. These results suggest that the semiconducting $\alpha$-PtO$_2$ microcrystalline phase in amorphous matrix lead to a drastically faded cyclibility of 50W Pt doped V$_2$O$_{5}$ cathode film. Possible explanations are given to describe the Pt doping effect on cyclibillity of the amorphous V$_2$O$_{5}$ cathode film battery. film battery.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.369-369
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• 2007

ZnO film has been investigated during several decades because it has excellent optical property like a transmittance among the range of visible light for using transparent conducting oxide (TCO) films. But ZnO film has not enough conductivity for applying to TCO devices. Therefore we synthesized platinum nanoparticles and they incorporated into ZnO due to improve the electrical property of ZnO film by sol-gel synthesis method. Also, we fabricated photosensitive ZnO thin film containing Pt nanoparticles by sol-gel process and spin-coating for using photochemical solution deposition. Photosensitive ZnO film could carry out the direct-pattern which allow the etching process to be convenient. The optical and electrical properties of ZnO film with or without various atomic percent of Pt nanoparticles annealed at various temperatures were investigated by using UV-Vis spectroscopy and 4-point probe method, respectively. We characterized the ZnO thin film containing Pt nanoparticles using X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.363-364
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• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.278-279
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• 2005

The crystallization of FePt/MgO(100) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 500-${\AA}$-thick, ordered (fct) FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 812-${\AA}$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.358-361
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• 1999

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD\`s and micro-heater on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to SiO$_2$ layer The MgO layer improved adhesion of Pt thin-films to SiO$_2$` layer without any chemical reactions to Pt thin-films under high as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at N2 flow rate of 2000 sccm/min, heating power of 1.2W. The respons time was about 100 msec when input flow was step-input

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.375-378
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• 1998

Platinum thin film which hardly form volatile compounds with any reactive gas at normal process temperature was etched in inductive coupled BCl$_{3}$/Cl$_{2}$ plasma. The etch rate of platinum thin film increased with increasing Cl$_{2}$/(Cl$_{2}$ + BCl$_{3}$) ratio. That reasoned increasing of ion current density.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.176-186
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• 1998

Pure Pt, Co and their alloy thin films with three different compositions (Pt66-Co34, Pt40-Co60 and Pt18-Co82) were deposited on Si(100) wafers and proposed as a set of certified reference materials (CRM) for the quantification and standardization of surface compositional analysis. The compositions of the binary alloy thin films were controlled by in-situ XPS analyses and the certified compositions of the films have been determined by ICP-AES and RBS analyses after thin film growth. Through comparison of the compositions determined by in-situ XPS with those by ICP, relatively accurate compositions could be obtained with a matrix effect correction. Standard deviations of XPS and AES round robin tests with the Pt-Co alloy thin films were large up to about 4%. On the other hand, the average compositions of the Pt-Co alloy thin films by two methods were in a good agreement within 1%. The formation of a Pt rich surface layer by ion beam sputtering indicates that the surface modification by preferential sputtering must be understood for a better compositional analysis.

• Journal of the Korean Magnetics Society
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• v.12 no.3
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• pp.94-98
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• 2002

Sputtering conditions and various underlayer such as Al, Cu, Ni, Cr, Ag, Mg, Fe, Co, Pd, Au, Pt, Mo and Hf were investigated for coercivity enhancement of 20 nm Ti/CoCrPt thin films in order to increase the coercivity of the films thinner than 20 nm. Among them, Ag and Mg were effective to increase the coercivity. Particularly 2 nm Ag was very effective to increase the coercivity and nucleation field as well as to reduce ${\alpha}$ value in CoCrPt thin film such that the coercivity of 2 nm Ag/18 nm Ti/10 nm CoCrPt film was 2200 Oe. However, it seemed that other coercivity enhancement mechanism operated in CoCrPt films because Ti (002) preferred texture was not developed with Ag underlayer contrary to a general expectation. And the coercivity and nucleation field were decreased when glass substrate with rougher surface was used.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.87-91
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• 2004

We have investigated the effects of W-N/Pt bottom electrode on the ferroelectric degradation of $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)/Pt$ due to hydrogen annealing at $350^{\circ}C$ in $N_2$ gas atmosphere containing $5{\%}\;H_2$ gas for 1hr. As a result, inserting the W-N thin films between SBT and Pt, this W-N thin film prevents hydrogen molecules to be chemisorbed at the Pt electrode surface of at the electrode/ferroelectric interface during hydrogen annealing. These hydrogen atoms can diffuse into the SBT and react with the oxide causing the oxygen deficiency in the SBT film, which will result in the ferroelectric degradation. Experimental results show that W-N thin film is a good diffusion barrier during the hydrogen annealing.