• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.245-251
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• 2000

Dielectric properties, piezoelectric properties and mechanical properties of NiO-doped Pb($(Ni_{1/3}Nb_{2/3})O_3-PbTiO_3-PbZrO_3$ ceramics were investigated. Powders, prepared by columbite precursor method, were cold pressed and sintered at temperature ranging from $1100^{\circ}C$ to $1250^{\circ}C$. Dielectric constant and piezoelectric constant increased with amount of NiO up to 1 mol% and then decreased with further addition of NiO. It seems that NiO acts as a sintering aid at the sintering temperatures of $1150^{\circ}C$. When the samples were sintered at temperature above $1200^{\circ}C$, however, both dielectric constant and electromechanical coupling factor decreased and mechanical quality coefficient increased with addition of NiO. Hardness and fracture toughness of PNN-PT-PZ increased with addition of NiO up to 1 mol%, and then decreased slightly with further addition of NiO. These results showed that dielectric properties, piezoelectric properties and mechanical properties of PNN-PT-PZ system seemed to be closely related with microstructural factors such as grain size, bulk density and the amount of second phase.

• Journal of Technologic Dentistry
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• v.38 no.3
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• pp.157-163
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• 2016

Purpose: It is to compare and evaluate the change of the wear rate and phase variation of the Zirconia before and after the sintering after the grinding by a high speed equipment manufactured for the Zirconia. Methods: The specimen of the sintered Zirconia was manufactured as size of $15mm{\times}15mm{\times}2mm$. The grinding has been applied to each of all pieces of each test groups for a minute fit for each condition at same speed of 50,000 rpm by a diamond bur at high speed handpiece with injection of the air and water. For the observation of the surface before and after the sintering of the each test piece, the cross section of it was observed as 100 magnification by a scanning electron microscope after it was coated by PT, and the diffraction analysis was performed by XDR to compare the crystal phase of the Zirconia. The average surface roughness value of all specimens were evaluated. The wear test was performed at room temperature by applying a load of 1kg for 120,000 cycles for the chewing period 6 months. Wear was analyzed for the enamel cusps by measurement of the vertical substance loss with a laser scanner. Conclusion: The phase variation from the tetragonal phase to the monoclinic phase was confirmed in the test group of the pre-sintered Zirconia after the grinding, and the value of the surface roughness and the wear rate was increased in experimental group.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.65-67
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• 1990

In this study, (0.80-x)Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-$PbTiO_3$-Pb($Ni_\frac{1}{2}W_\frac{1}{2}$)$O_3$ 0.05$\leq$x$\leq$0.20) ceramics were fabricated by the mixed oxide method, the sintering temperature and time were 950∼1200[$^{\circ}C$], 2[hr], respectively. The dielectric and structural properties with composition and sintering temperature were investigated for the application as multilayer ceramic capacitors. Dielectric constant of 0.70PMN-0.2PT-0.10PNW composition with repeated calcination was increased rapidly. Increasing the Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-$PbTiO_3$-Pb($Ni_\frac{1}{2}W_\frac{1}{2}$)$O_3$ contents from 0.05 to 0.20 [mol], phase transition temperature was shifted from 68 to 2[$^{\circ}C$] and dielectric constant was decreased while sintered density was increased. In the specimens containing 0.10, 0.15[mol] of PNW, dielectri constants at room temperature were exhibited the highest values 11199, 10114, respectively. Resistivity of specimens were $10^{10}$ ∼ $10^{12}$($\Omega$.m) and there was no dependence on sintering temperature and composition.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.991-1000
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• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.418-427
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• 1997

The effect of $La_2O_3$ as a dopant on the microstructure structure, crystal structure and electrical properties was studied. $0.05Pb(Sn_{0.5}Sb_{0.5})O_3＋0.11PbTiO_3＋0.84PbZroO_3＋0.4Wt%MnO_2$ (=0.05PSS ＋0.11PT＋0.84PZ+0.4wt%$MnO_2$) systems doped with 0, 0.1, 0.3, 0.5, 0.7, 1, 3, 5 mole% $La_2O_3$ were fabricated and investigated sintering density, crystal structure and micro-structure. The sintered 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system doped with $La_2O_3$showed sintering density of the range of 7.683 g/㎤ of 0 mole% doping to 7.815 g/㎤ of 0 mole% doping. The average grain sizes in the range of 0 to 5 mole% $La_2O_3$were decreased from 9.0 $\mu\textrm{m}$ to 1.3 $\mu\textrm{m}$. X-ray diffraction investigation of sintered bodies showed that solid solutions were formed between 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system and $La_2O_3$ in the range of 0 to 1 mole% but second phases were formed in case of 3, 5 mole%. Dielectric constants at 1 kHz were increased with 0 to 3 mlole% $La_2O_3$ before and after poling at the condition of 5 $KV_{DC}$/mm at $120^{\circ}C$ or $140^{\circ}C$ during 20 minutes. All Dielectric losses at 1 kHz were less than 1%, Curie temperatures were $208^{\circ}C$, $183^{\circ}C$, $152^{\circ}C$ and $127^{\circ}C$ at 0, 0.5, 1, 3 mole% $La_2O_3$ respectively. The values of $K_p$ were increased from 0 to 3 mole% $La_2O_3$ after poling at condition of 5 $KV_{DC}$mm at the condition of $120^{\circ}C$ or $140^{\circ}C$. The case of 0.7 mole% $La_2O_3$doped 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system showed $K_p$ of 14.5% by poling at $140^{\circ}C$ during 20 minutes.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.159-163
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• 2002

A single phase perovskite relaxor ferroelectric PMN-PT-BT was prepared by a single calcination and the modified mixed oxide process. It was accomplished by ball-milling PbO, $Nb_2O_5,\;Ti(OC_3H_7)_4,\;BaCO_3,\;and\;Mg(NO_3)_2$ instead of MgO, removing the solvent, and then followed by calcination at 900$^{\circ}C$ for 2h. The specimen sintered at 1100$^{\circ}C$/2h showed the sintered density of 7.83 g/$cm^3$, room temperature dielectric constant of 22000, and dielectric loss of 2.5%. Addition of 1.0 mole% (0.3 wt%) of Ag as $AgNO_3$ and followed by calcination at 550$^{\circ}C$/2h lowered the sintering temperature to 900$^{\circ}C$. It still showed the sintered density of 7.88 g/$cm^3$, room temperature dielectric constant of 20000 and dielectric loss of 2.4%.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.846-850
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• 2002

A PMN-PT-BT/Ag composite was prepared by surface modification with MgO sol with hoping to suppress silver's migration during sintering. The mixture of PbO, $N_2O_5,\;TiO_2\;with\;Mg(NO_3)_2$ instead of MgO was ball milled, the solvent was removed and then the dried powders were calcined at 950$^{\circ}C$/1h. The calcined powder were treated with 3.0 mol% $Ag_2O$ and 1.0 wt% MgO sol and calcined at 550$^{\circ}C$/1h. The dielectrics sintered at 1000$^{\circ}C$/4h under a flowing oxygen showed the density of 7.84g/$cm^3$, the room temperature dielectric constant of 18400, the dielectric loss of 2.4%, the specific resistivity of $0.24{\times}10^{12}{\Omega}{\cdot}cm$. It also showed the bending strength of $120.7{\pm}11.26$ MPa and the fracture toughness of $0.87{\pm}0.002\;MPam^{1/2}$ which were comparable to commercial PZT. The microstructure sonsisted of grains of ∼4${\mu}m$. SEM and SIMS analysis showed that Ag grew as ∼1${\mu}m$ and excess MgO as ∼0.5${\mu}m$.

• Journal of the Microelectronics and Packaging Society
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• v.3 no.1
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• pp.25-32
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• 1996

본 연구에서는 BaTiO3에 Sr과 Pb를 치환시켜TiO3 조성의 세라믹 유전체를 제조한 후 페로브스카이트형 Ba(Cu, Mo)O3를 저융점 flux 로 첨가하여 120$0^{\circ}C$ 이하의 여러온도에 서 소결을 행하였으며 flux 첨가량의 변화에 따른 소결거동 및 유전 특성의변화를 조사하였 다. 이러한 저온 소결용 유전체 세라믹스가 MLCC의 응용시 Pt-Pd계의합금을 내부전극으로 사용가능성을 검토하였다. Flux를 4mol%첨가한 TiO3-0.04Ba(Cu,Mo)O3 조성의 유전체는 120$0^{\circ}C$의 온도에서 2시간 소결했을 경우 소결밀도는 이론밀도의 95% 에 근접하였으며 이때 의 비유전율은 8000이상을 나타내었다. 이러한 소결 온도의 감소는 저융점인 ba(Cu,Mo)O3 계의 flux가 첨가되면서 비교적 낮은 온도에서 액상을 형성하여 소결을 촉진시켰기 때문으 로 사료된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.814-817
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• 2003

As additive Pt of a little to $SnO_2$ that gas sensing property is superior oxide-semiconductor material to fabricate gas sensor that operation is possible at room temperature and fabricated ceramic gas sensing devices. And, the change amount and sintering temperature of addition material investigated gas sensitivity by change of operation temperature, humidity relativity, Long-term stability and hysteresis. And achieved SEM and XRD analysis for characteristics searching examination of devices.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.212-215
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• 2010

$BiFeO_3/Pb(Zr_{0.95}Ti_{0.05})O_3$ (BFO/PZT) heterolayered thin films were fabricated by the spin coating method on a Pt/Ti/$SiO_2$/Si substrate using metal alkoxide solutions. The coating and heating procedure was repeated 6 times to form the heterolayered films. The thickness of the BFO/PZT films after one cycle of drying/sintering is about 30-40 nm. All BFO/PZT films show a void free uniform grain structure without the presence of rosette structures. It can be assumed that the crystal growth of the upper BFO layers can be influenced by the lower PZT layers. As the number of coatings increased, the dielectric constant increased, so that the value for the 6-layer film was 1360 at 1 KHz.