• Korean Journal of Materials Research
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• v.8 no.6
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• pp.560-564
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• 1998

CoPtCr magnetic layer was fabricated on the Cr underlayer by RF magnetron sputtering and the protective $SiO_2$ layer was deposited at room temperature. As the thickness of Cr underlayer increased, the coercive force of magnetic layer increased, then saturated slightly further increasing Cr underlayer thickness. Maximum coercive force was 860 Oe. It is thought that in-plane arrangement of magnetic phase and magnetic decoupling between the magnetic crystallites could lead to the increase of the coercive force. Post-annealing raised the coercive force exceedingly. and maximum coercive force value was 1650 Oe which was acquired from the sample annealed at 55$0^{\circ}C$ for 1hr.

• Journal of Ceramic Processing Research
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• v.23 no.1
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• pp.29-32
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• 2022

K(Ta_0.80Nb_0.20)O₃ films with Pb(Zr_0.52Ti_0.48)O₃PZT buffer layer on Pt/Ti/SiO₂/Si substrate were fabricated by sol-gel and spin-coating method. Structural and electrical properties were measured with variation of the sintering temperature, and the applicability to microwave materials was investigated. All K(Ta_0.80Nb_0.20)O₃ films showed a cubic crystal structure. Average grain size was about 123~193 nm and average thickness of the K(Ta_0.80Nb_0.20)O₃ films was approximately 366 nm. Through the AFM results, root mean square roughness (Rrms) of all K(Ta_0.80Nb_0.20)O₃ films was around 6 nm. All K(Ta_0.80Nb_0.20)O₃ films showed a tendency to increase dielectric loss as frequency increased. As the sintering temperature increased, tunability with an applied DC voltage indicated a decreasing tendency. Tunability and temperature coefficient of the K(Ta_0.80Nb_0.20)O₃ film sintered at 700 ℃ showed good values of 22.1% at 10 V, -0.594/℃.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.9-12
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)$ thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using RF magnetron sputtering method. With increasing post-annealing temperature from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}C/cm^{2}$] 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of $750[^{\circ}C]$ is $1.01{\times}10^{-8}A/cm^2$ at 100[kV/cm]

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.225-225
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• 2008

PLZT 박막을 Pt/Ti/$SiO_2$/Si 기판 위에 RF-마그네트론 스퍼터링방법으로 형성할 때 기판온도에 따른 PLZT 박막의 결정성과 전기적 특성 및 강유전 특성에 미치는 영향에 관하여 연구하였다. 하부전극 Pt와 PLZT 박막 사이에는 완충층으로 $TiO_2$를 사용하여 계면에서의 상호확산을 제어하면서 우수한 물성의 PLZT 박막을 얻고자 하였으며, 여러 기판온도에서 PLZT 박막을 증착한 후, 박막의 결정화를 위해 급속열처리법으로 $700^{\circ}C$로 후열처리하였다. 그 결과 기판온도 $400^{\circ}C$에서 증착한 PLZT 박막이 가장 우수한 특성을 나타내었으며, 이때의 잔류분극과 누설전류밀도는 각각 15.8 ${\mu}C/cm^2$, $5.4\times10^{-9}A/cm^2$ 이였다. 그러나 $500^{\circ}C$에서는 결정립 조대화현상이 나타나면서 잔류분극과 누설전류밀도는 9 ${\mu}C/cm^2$, $3.09\times10^{-7}A/cm^2$로 특성이 저하되었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.439-444
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• 2005

We investigated the structural and electrical properties of BLT films grown on Si covered with $ZrO_{2}$ buffer layer. The BLT thin film and $ZrO_{2}$ buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the $ZrO_{2}$ layer. AES and TEM show no interdiffusion and reaction that suppressed using the $ZrO_{2}$ film as a buffer layer The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the $ZrO_{2}$ layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using $ZrO_{2}$ buffer layer. The results show that the $ZrO_{2}$ buffer layers are prospective candidates for applications in MFIS-FET memory devices.

• Proceedings of the KAIS Fall Conference
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• 2001.05a
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• pp.220-223
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• 2001

Pb가 10% 과잉되고 Zr : Ti = 52 : 48 조성을 갖는 PZT sol이 Pt(3500Å)/Ti(400Å)/SiO₂(3000Å)Si(525㎛)기판 위에 스핀 코팅법으로 반복 코팅된 후, 450℃에서 10분, 650℃에서 2분간 반복 열처리되었다. 이와 같이 다양한 두께로 적층된 박막은 각 시편에 대해 최종적으로 650℃ 30분 동안 어닐링 처리되었다. 제조된 PZT 박막의 두께는 4100Å에서 1.75㎛사이의 4종이었다. 이어서 스퍼터링법으로 Pt전극이 PZT 막 위에 증착되었다. 제조된 PZT 박막의 결정 구조 조사를 위해 XRD, 그리고 미세 구조 및 전기적 특성을 알아보기 위해 FESEM과 P-E 이력 곡선이 각각 관찰되었다. 4100Å에서 1.75㎛까지 두께 증가에 따른 장비상의 포화 이력 한계로 잔류 분극(Pr)값이 25μC/㎠에서 다소 감소되었다. 측정된 X선 회절 결과에서 최초 4회 코팅시 perovskite 결정 구조로 성장한 결정립은 (111)배향이 우세하었으나, 두께가 증가됨에 따라 (111)/(110)값이 감소되었으며, 이를 통해 두께 증가에 따른 (111)배향성이 다소 감소됨을 알 수 있었다. 이상의 결과로부터 제조된 PZT 박막은 큰 힘과 높은 내전압 특성을 갖는 마이크로 압전 액츄에이터에 적용될 수 있을 것으로 생각되었다.

• Journal of Sensor Science and Technology
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• v.18 no.5
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• pp.349-352
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• 2009

This paper describes the fabrication and characteristics of micro heaters built on AlN($0.1{\mu}m$)/3C-SiC($1{\mu}m$) suspended membranes by surface micromachining technology. In this work, 3C-SiC and AlN films are used for high temperature environments. Pt thin film was used as micro heaters and temperature sensor materials. The resistance of temperature sensor and the power consumption of micro heaters were measured and calculated. The heater is designed for operating temperature up to about $800^{\circ}C$ and can be operated at about $500^{\circ}C$ with a power of 312 mW. The thermal coefficient of the resistance(TCR) of fabricated Pt resistance of temperature detector(RTD)'s is 3174.64 ppm/$^{\circ}C$. A thermal distribution measured by IR thermovision is uniform on the membrane surface.

• Korean Journal of Materials Research
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• v.7 no.6
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• pp.522-528
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• 1997

RF-magnetron Sputtering Process를 이용하여 Pt/Ti/Si(100)기판위에 lanthanum-modified lead titanate 박막을 제작하였다. 기판온도와 증착시간이 증가함에 따라 증착율은 감소하였다. 기판온도가 증가함에 따라 fine grain들은 large grain으로 변화하였다. Perovskite구조는 기판온도 54$0^{\circ}C$, gas pressure 30mtorr에서 나타나기 시작하였다. 본 실험에서 perovskite 박막제작에 대한 조건은 기판온도 58$0^{\circ}C$, gas pressure 30mtorr였다. Pt/Ti/Si(100) 우선 배향된 박막을 얻었다. La양이 증가함에 따라 유전율, 항전계, 잔류분극량은 증가하였다. 중심주파수가 44.7MHz, 전파속도는 2680m/sec를 가지는 SAW filter 특성을 얻었다.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.18-21
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• 2007

The hexagonal $HoMn_{1-x}-Fe_xO_3$(x=0.00, 0.05) thin films were prepared using pulsed laser deposition(PLD) method on $Pt/Ti/SiO_2/Si$ substrate. The microstructure and magnetic properties have been studied by x-ray diffraction(XRD), atomic force microscopy (AFH), scanning electron microscope(SEM:), x-ray photoelectron spectroscopy(XPS), and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). From the analysis of the x-ray diffraction patterns, the crystal structure for all films was found to be a hexagonal($P6_3cm$), which was preferentially grown along(110) direction. The lattice constant $c_0$ of the film with x=0.05 was close to that of single crystal, whereas lattice constant $a_0$ with respect to single crystal shows a slight decrease. This difference of lattice parameters between film and single crystal was caused by the lattice mismatch between the film and $Pt/Ti/SiO_2/Si$ substrate. Conversion electron $M\"{o}ssbauer$ spectrum of $HoMn_{0.95}Fe_{0.05}O_3$ thin film shows an asymmetry doublet absorption ratio at room temperature, which is due to the oriented direction of crystallographic domains. This is corresponding with analysis of x-ray diffraction. The quadrupole splitting(${\Delta}E_Q$) at room temperature is found to be $1.62{\pm}0.01mm/s$. This large ${\Delta}E_Q$ was caused by asymmetry environment surrounding Fe ion.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.205-210
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• 2011

Structural and electrochemical properties of spinel oxide $LiMn_2O_4$ thin films prepared by using a sol-gel method on Pt/Ti/$SiO_2$/Si substrates were investigated. When Li/Mn molar ratio of the film was smaller than 0.5, $Mn_2O_3$hase was found to coexist with $LiMn_2O_4$. Half-cell batteries fabricated using the $LiMn_2O_4$ films as the cathode were put into chargedischarge (C-D) cycles and the change in structural properties of the cathode after the cycles was examined by X-ray diffraction and Raman spectroscopy. As the C-D cycle number increases, the discharge capacity of pure $LiMn_2O_4$ battery gradually decreases, being reduced to 72% of the initial capacity at 300 cycles. Such capacity fading is attributable to the decrease in the number of $Li^+$ ions that return to the tetrahedral sites of the spinel structure during the discharge step and the resultant increase in $Mn^{4+}$ density in the film. Also, $Mn_2O_3$ phase gradually appeared in the film as the cycle number increases.