• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2544-2546
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• 1998

The electrical and physical charateristics of Pt-Co alloy thin films on $Al_2O_3$ substrate, deposited by r.f cosputtering respectively, were analyzed with thickness of thin films ($1700{\sim}10000{\AA}$) and increasing annealing temperature ($800{\sim}1000^{\circ}C$). At input power of Pt : 4.4 W/$cm^2$, Co : 6.91 W/$cm^2$, working vacuum of 10 mTorr and annealing conditions of $1000^{\circ}C$) and 60 min, the resistivity and sheet resistivity of Pt-Co thin films with thickness of $3000{\AA}$ was $15{\mu}{\Omega}{\cdot}cm$ and 0.5 ${\Omega}/{\square}$, respectively. The TCR value of Pt-Co alloy thin films was measured with various thickness of thin films and annealing conditions. The optimum TCR value of 3850 ppm/$^{\circ}C$ in temperature range($200{\sim}400^{\circ}C$) is gained under conditions $3000{\AA}$ of thin films thickness and $1000^{\circ}C$ of annealing temperature. The thermal charateristics of Pt-Co micro heaters were analysed with Pt-Co RTD integrated on the same substrate. In the analysis of characteristics of Pt-Co micro heaters, the Pt-Co micro heaters with thickness of $3000{\AA}$ and annealing temperature of $1000^{\circ}C$ had a good linearity and temperature is up to $468.2^{\circ}C$ with 2.1 watts of the heating power.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.911-917
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• 1996

Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.

• Journal of Magnetics
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• v.4 no.4
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• pp.119-122
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• 1999

Magnetic properties and crystal structures of (Fe1-XCoX) Pt (X = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0) ternary thin films were investigated. The order-disorder phase transformation of FePt thin films during annealing was also studied by x-ray diffraction and M ssbauer spectroscopy. The magnetic thin films were deposited on glass substrates using a dc sputtering method and were subsequently annealed at 400~$700^{\circ}C$ in a high vacuum. The as-deposited films exhibited a high degree of the <111> preferred orientation and the preferred orientation was not destroyed even after the subsequent post annealing. The coercivity of the ($Fe_xCo_{1-x}$) Pt thin films annealed at $700^{\circ}C$ showed a minimum value at the equiatomic composition of the Fe and Co atoms. The ordered structure of the FePt alloy was thought to have formed from the disordered structure by an inhomogeneous process, which was confirmed by the asymmetric peak shapes and M ssbauer spectra.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.176-186
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• 1998

Pure Pt, Co and their alloy thin films with three different compositions (Pt66-Co34, Pt40-Co60 and Pt18-Co82) were deposited on Si(100) wafers and proposed as a set of certified reference materials (CRM) for the quantification and standardization of surface compositional analysis. The compositions of the binary alloy thin films were controlled by in-situ XPS analyses and the certified compositions of the films have been determined by ICP-AES and RBS analyses after thin film growth. Through comparison of the compositions determined by in-situ XPS with those by ICP, relatively accurate compositions could be obtained with a matrix effect correction. Standard deviations of XPS and AES round robin tests with the Pt-Co alloy thin films were large up to about 4%. On the other hand, the average compositions of the Pt-Co alloy thin films by two methods were in a good agreement within 1%. The formation of a Pt rich surface layer by ion beam sputtering indicates that the surface modification by preferential sputtering must be understood for a better compositional analysis.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1408-1416
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• 1995

Microstructure and ferroelectric properties of sol-gel derived PZT(52/48) and PT interlayered PZT(52/48) thin films on Pt/Ti/SiO2/Si substrates were investigated. Films were fabricated using Acetylacetone chelated PT and PZT(52/48) sols. PZT(52/48) thin films annealed at $700^{\circ}C$ for 20 min showed the rosette structure with the size of 1.2~1.6${\mu}{\textrm}{m}$ and the pyrochlore phse was contained. PT interlayered PZT thin films, which is inserted by PbTiO3 thin layer with the thickness of 130 $\AA$ between PZT thin film and electrode, consisted of a single perovskite phase after annealing above 55$0^{\circ}C$. They exhibited the uniform and columnar grains of 0.1~0.16${\mu}{\textrm}{m}$, which are applicable for microelectronic device including non-volatile memory. Typical P-E hysteresis loops could be obtained from PT interlayered PZT thin film at as low as the annealing temperature of 50$0^{\circ}C$. Ferroelectric properties of PT interlayered PZT thin films were improved as increasing annealing temperature up to $700^{\circ}C$, and then deteriorated at 75$0^{\circ}C$. PZT(52/48) and PT interlayered PZT(52/48) thin film annealed at $700^{\circ}C$ for 20 min displayed Ps=38.8$\mu$C/$\textrm{cm}^2$, Pr=10.0$\mu$C/$\textrm{cm}^2$, Ec=65.3 kV/cm and Ps=28.5$\mu$C/$\textrm{cm}^2$, Pr=9.8$\mu$C/$\textrm{cm}^2$, Ec=76.1 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.214-214
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• 2010

The 0.65Pb($Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with $La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on $CeO_2$/YSZ/Si(001), Pt/$TiO_2$/Si and $SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of $550^{\circ}C$. Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and $CeO_2$/YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$/Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and $4.4{\mu}C/cm^2$ on $CeO_2$/YSZ/Si, Pt/TiO2/Si and STO substrates respectively.

• Journal of Magnetics
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• v.14 no.1
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• pp.7-10
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• 2009

In this work, we studied the effects of Sn addition on the ordering temperature of FePt thin film. The coercivity of FePtSn film was about 1000 Oe greater than the coercivity of FePt film for an annealing temperature of $600^{\circ}C$. Therefore, Sn addition was effective in promoting the $L1_0$ ordering and in reducing the ordering temperature of the FePt film. From our X-ray diffraction results, we found that in the as-deposited film, the addition of Sn induced a lattice expansion in disordered FePt thin films. After the annealing process, the excess Sn diffuses out from the ordered FePt thin film because of the difference in the solid solubility of Sn between the disordered and ordered phases. The existence of precipitates of Sn from the FePt lattice was deduced by Curie temperature measurements of the FePt and FePtSn films. Therefore, the key role played by the addition of Sn to the FePt film can be explained by a reduction in the activation energy for the $L1_0$ order-disorder transformation of FePt which originates from the high internal stress in the disordered phase induced by the supersaturated Sn atoms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.331-334
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• 1997

The electrical and physical charateristics of aluminum oxide and Pt thin films on it, deposited by reactive sputtering and DC magnetron sputtering, respectively, were analysed with increasing annealing temperature(400~80$0^{\circ}C$) by four point probe, SEM and XRD. Under $600^{\circ}C$ of annealing temperature, aluminum oxide had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin films and the resistivity of Pt thin finns was improved. But these properties of aluminum oxide and Pt thin finns on it were degraded over $700^{\circ}C$ of annealing temperature because aluminum oxide was changed into metal aluminum and then reacted to Pt thin films deposited on it. The thermal characteristics of Pt micro heater were analysed with Pt-RTD integrated on the same substrate. In the analysis of properties of Pt micro heater. active area was smaller size, Pt micro heater had better thermal characteristics. Temperature of Pt micro heater fabricated on membrane was up to 34$0^{\circ}C$ with 1.2watts of the heating power due to reduction of the external thermal loss.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.358-361
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• 1999

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD\`s and micro-heater on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to SiO$_2$ layer The MgO layer improved adhesion of Pt thin-films to SiO$_2$` layer without any chemical reactions to Pt thin-films under high as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at N2 flow rate of 2000 sccm/min, heating power of 1.2W. The respons time was about 100 msec when input flow was step-input

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1485-1487
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• 1997

Platinum-Cobalt alloy thin films were deposited on $Al_2O_3$ substrates by co sputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on $Al_2O_3$ substrate by lift-off method and investigated the physical and electrical characteristics of these films under sputtering conditions (; the input power, working vacuum), annealing conditions (; temperature, time) and also after annealing these films. After the annealing treatment at $800^{\circ}C$ for 60min, the resistivity and sheet resistivity of Pt-Co thin films was $0.0302{\mu}{\Omega}{\cdot}cm$ and $0.1{\Omega}/{\square}$, respectively, and the TCR value of Pt-Co RTD was $3600ppm/^{\circ}C$ in the temperature range of $25{\sim}400^{\circ}C$. These results indicate that Pt-Co thin films have potential for the excellent RTD temperature sensors.