• 제목/요약/키워드: Pt/$TiO_2$

검색결과 982건 처리시간 0.031초

SBN 세라믹 박막의 구조 및 AFM 특성 (Structure and AFM Characteristics of SBN Ceramic Thin Film)

  • 김진사;최영일;오용철;신철기;박건호;김충혁
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.291-291
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    • 2010
  • The SBN ceramic thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at substrate temperature of 300[$^{\circ}C$]. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The crystallinity of SBN thin films were increased with increase of annealing temperature in the temperature range of 600~800[$^{\circ}C$]. the surface rougness showed about 20 [nm].

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RF 스퍼터링법에 의한 SCT 박막의 Sr/Ca 비율 영향 (Effects of Sr/Ca Ratio of SCT thin film by RF Sputtering Method)

  • 김진사;오용철
    • 반도체디스플레이기술학회지
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    • 제5권4호
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    • pp.5-9
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    • 2006
  • The SCT thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with Sr/Ca ratio. The maximum grain of thin films is obtained by ratio of Ca at 15 mol%. The dielectric constant was increased with increasing the ratio of Ca, while it was decreased if the ratio of Ca exceeded over 15 mol%. The dielectric constant changes almost linearly in temperature ranges of $-80{\sim}+90$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200 kHz. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the measuring temperature increases.

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나노튜브 전극 기반 양자점 감응 태양전지 구현을 위한 투명한 상대전극 (Transparent Counter Electrode for Quantum Dot-Sensitized Solar Cells with Nanotube Electrodes)

  • 김재엽
    • 한국표면공학회지
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    • 제52권1호
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    • pp.1-5
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    • 2019
  • Anodic oxidized $TiO_2$ nanotube arrays are promising materials for application in photoelectrochemical solar cells as the photoanode, because of their attractive properties including slow electron recombination rate, superior light scattering, and smooth electrolyte diffusion. However, because of the opacity of these nanotube electrodes, the back-side illumination is inevitable for the application in solar cells. Therefore, for the fabrication of solar cells with the anodic oxidized nanotube electrodes, it is required to develop efficient and transparent counter electrodes. Here, we demonstrate quantum dot-sensitized solar cells (QDSCs) based on the nanotube photoanode and transparent counter electrodes. The transparent counter electrodes based on Pt electrocatalysts were prepared by a simple thermal decomposition methods. The photovoltaic performances of QDSCs with nanotube photoanode were tested and optimized depending on the concentration of Pt precursor solutions for the preparation of counter electrodes.

Growth of Textured CoFe2O4 Thin Films on Platinized Silicon Prepared by a Sol-Gel Method

  • Mustaqima, Millaty;Lee, Min Young;Kim, Deok Hyeon;Lee, Bo Wha;Liu, Chunli
    • Journal of Magnetics
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    • 제19권3호
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    • pp.227-231
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    • 2014
  • We fabricated textured polycrystalline $CoFe_2O_4$ thin films on $Pt(111)/TiO_2/SiO_2/Si$ substrate through a sol-gel method. We varied the thickness of the films, by using precursor solutions with different concentrations of 0.1, 0.2, and 0.3 M, and by depositing 5, 8, or 10 layers on the substrate by spin-coating. X-ray diffraction spectra indicated that when the precursor concentration of the solution was higher than 0.1 M, the spin-coated films were preferentially oriented in the <111> direction. Inspection of the surface morphology by scanning electron microscopy revealed that $CoFe_2O_4$ thin films prepared with 0.2 M solution and 5-time spin-coatings had smoother surface, as compared to the other conditions. Each coating had an average thickness of about 50 nm. The magnetic properties measured by vibrating sample magnetometer showed magnetic anisotropy, as evidenced from the difference in the in-plane and out-of-plane hysteresis loops, which we attributed to the textured orientation of the $CoFe_2O_4$ thin films.

$TIO_2$ 전극의 소결온도에 따른 DSSCS 제조 및 성격 (Preparation and characterization of $TiO_2$ Thin Film By Various temperature)

  • 김성진;박헌균
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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    • pp.95.2-95.2
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    • 2010
  • 염료감응형 태양전지의 효율을 향상을 시키기 위하여, 이산화티타니아박막을 doctor-blade 방법으로 FTO 기판위에 15-16um 코팅을 한뒤, 다른 온도의 $400^{\circ}C-600^{\circ}C$ 범위에서, 소결을 하였다. 상대전극은 FTO 기판위에 5Ml의 Pt용액을 가지고, $450^{\circ}C$온도에서 제작을 하였다. 실험의 결과 이산화티타니아의 표면거칠기 및 입자사이즈의 소결의 형상에 따라 DSSC의 효율의 상관관계가 영향을 받았다. 표면의 형상은 AFM으로 측정을 하였으며, 표면의 단차가 RMS의 값이 7nm이하 일 때, 효율의 향상을 이루었다. 실험결과 $500^{\circ}C$ 이하일 때, 상대적으로 낮은 open circuit voltage를 이루었으며, 낮은 Fill-factor를 이루었다. $500^{\circ}C$이상의 온도에서는 상대적으로 높은 high circuit voltage와 높은 fill factor를 나타내었다. 실험결과 $500^{\circ}C$에서 소결된 전극을 가진 DSSC가 단락의 전압과 개방전류가 상호보완된 적정값을 가져 가장 개선된 FF와 Eff를 나타내었다. 이와 같은 특성은 이산화티타니아의 준위 모식도에서 설명이 될수 있고, 이산화티타니아의 최적의 necking 및 pore, 입자크기등이 제어될수 있음을 의미한다.

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The Structural and Electrical Properties of NiCr Alloy for the Bottom Electrode of High Dielectric(Ba,Sr)Ti O3(BST) Thin Films

  • Lee, Eung-Min;Yoon, Soon-Gil
    • Transactions on Electrical and Electronic Materials
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    • 제4권1호
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    • pp.15-20
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    • 2003
  • NiCr alloys are prepared onto poly-Si/ $SiO_2$/Si substrates to replace Pt bottom electrode with a new one for integration of high dielectric constant materials. Alloys deposited at Ni and Cr power of 40 and 40 W showed optimum properties in the composition of N $i_{1.6}$C $r_{1.0}$. The grain size of films increases with increasing deposition temperature. The films deposited at 50$0^{\circ}C$ showed a severe agglomeration due to homogeneous nucleation. The NiCr alloys from the rms roughness and resistivity data showed a thermal stability independent of increasing annealing temperature. The 80 nm thick BST films deposited onto N $i_{1.6}$C $r_{1.0}$/poly-Si showed a dielectric constant of 280 and a dissipation factor of about 5 % at 100 kHz. The leakage current density of as-deposited BST films was about 5$\times$10$^{-7}$ A/$\textrm{cm}^2$ at an applied voltage of 1 V. The NiCr alloys are possible to replace Pt bottom electrode with new one to integrate f3r high dielectric constant materials.terials.

Preparation of Low-Temperature Fired PZT Thick Films on Si by Screen Printing

  • Cheon, Chae-Il;Lee, Bong-Yeon;Kim, Jeong-Seog;Bang, Kyu-Seok;Kim, Jun-Chul;Lee, Hyeung-Gyu
    • Transactions on Electrical and Electronic Materials
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    • 제4권2호
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    • pp.20-23
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    • 2003
  • Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $\mu\textrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{\circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{\circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${\mu}$C/$\textrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($\varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.

Influence of Yb2O3 Doping Amount on Screen-printed Barium Strontium Calcium Titanate Thick Films

  • Noh, Hyun-Ji;Lee, Sung-Gap;Ahn, Byeong-Lib;Lee, Ju
    • Transactions on Electrical and Electronic Materials
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    • 제8권6호
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    • pp.241-245
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    • 2007
  • [ $(Ba_{0.9-x}Sr_xCa_{0.10})TiO_3$ ] (x=0.33, 0.36) powders were prepared by sol-gel method. $(Ba,Sr,Ca)TiO_3$(BSCT) thick films, undoped and doped with $MnCO_3$ and $Yb_2O_3(0.1{\sim}0.7mol%)$, were fabricated by the screen printing method on the alumina substrate. The coating and drying procedure was repeated 6-times. The Pt bottom electrode was screen printing method on the alumina substrate. These BSCT thick films were annealed at $1420^{\circ}C$ for 2 hr in atmosphere. The upper electrodes were fabricated by screen printing the Ag paste and then firing at $590^{\circ}C$ for 10 min. And then the structured and dielectric properties as a function of the doping amount of $Yb_2O_3$ were studied. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed XRD patterns of typical cubic peroveskite structure. The average thickness of BSCT thick films was about $70^{\mu}m$. The curie temperature and the dielectric constant decreased with increasing $Yb_2O_3$ doped content and the relative dielectric constant of the specimen, doped with 0.5 mol% $Yb_2O_3$ at BSCT(54/36/10), showed a best value of 5018 at curie temperature.

Cr 함량이 ZnCrO 박막의 구조 및 자기적 특성에 미치는 영향

  • 이황호;김창민;이병호;최경산;안장훈;우빈;이영민;이세준;김득영
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.282.2-282.2
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    • 2014
  • Cr의 함량과 주입 가스의 유량 비율을 변화하여 ZnCrO 박막의 구조적 특성에 미치는 영향과 그것이 자기적 특성에 관여하는 상관관계 등에 관하여 조사하였다. ZnCrO 박막을 Pt/Ti/Al2O3 기판 위에 Sputter법으로 증착하였으며, 이 때 양질의 ZnCrO 박막을 제작하기 위하여 산소 분압 변화에 따른 박막의 표면 및 구조적 특성을 관찰하였다. 아르곤과 산소 분압이 1 : 1 (Ar : O2=15 sccm : 15 sccm) 이었을 경우, 가장 매끄러운 표면을 갖고 또한 구조적으로도 안정된 ZnCrO 박막을 얻을 수 있었다. 동일한 조건에서 Cr 함량을 변화시켜 본 결과, Cr 함량이 작아질수록 자기적 특성이 향상되는 것이 관측되었다. 즉, Cr의 함량이 감소할수록 Cr 입자 1개 당 유효 자화도가 증가하는 것이 관측되었는데, 이러한 결과는 Cr 함량 변화에 따는 ZnCrO 박막의 결정 자기이방성 변화에 따른 것이다.

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RF Magnetron Sputtering으로 증착된 PTO/PZO 초격자 박막의 유전 특성 (Dielectric properties of PTO/PZO superlattices prepared by RF Magnetron Sputterring)

  • 한현자;이병수
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.38-38
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    • 2003
  • PTO/PZO 초격자 박막은 박막 계면에 응력이 발생하여 기존의 박막처럼 size effect가 적용되지 않고 두께가 감소해도 높은 유전상수를 갖는다. Antiferroelectric PbZrO$_3$(PZO)와 ferroelectric PbTiO$_3$(PTO)를 적층 성장시킨 초격자는 400도에서 성장한 (100) Pt/SiO$_2$기판 위에 rf magnetron sputtering으로 증착하였다. PTO/PZO의 증착 주기는 30(PTO $_{4unti cells}$/PZO $_{4unti cells}$) 에서 1(PTO $_{125unti cells}$/PZO $_{125unti cells}$)까지 두께의 변화를 주어 준비했고 초격자 박막의 전체두께는 100nm로 고정시켰다. XRD결과, PTO/PZO는 주기에 따라 초격자의 특성인 main peak과 satellite peak을 관찰 할 수 있었다. 초격자의 주기가 감소함에 따라 2$\theta$값이 증가하고 평균 d 값이 감소되면서 PTO층에 뒤틀림이 증가하였다. PTO층의 뒤틀림 증가로 인해 superlattice의 주기가 증가함에 따라 초격자의 유전율이 증가하였고 강유전성이 향상되었다.향상되었다.

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