• Journal of the Korean Electrochemical Society
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• v.16 no.4
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• pp.211-216
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• 2013

At Pt(111), Pt(100), Pt, and Rh interfaces, the Frumkin adsorption isotherm of underpotentially deposited hydrogen (UPD H) and related electrode kinetic data are determined using the standard Gibbs energy of adsorption. The Temkin adsorption isotherm of UPD H correlating with the Frumkin adsorption isotherm of UPD H is readily determined using the correlation constants between the Temkin and Frumkin or Langmuir adsorption isotherms. At the Pt(111), Pt(100), Pt, and Rh interfaces, the lateral repulsive interaction between the UPD H species is interpreted using the interaction parameter for the Frumkin adsorption isotherm. The lateral repulsive interaction between the UPD H species at the Pt(111), Pt(100), Pt, and Rh interfaces is significantly different from the lateral attractive interaction between the overpotentially deposited hydrogen (OPD H) species at Pt, Ir, and Pt-Ir alloy interfaces.

• Journal of the Korean Vacuum Society
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• v.3 no.3
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• pp.296-304
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• 1994

Pt-Ni 합금의 질서-무질서 상전이 현상과 {111}표면에서의 편석현상을 Ising 형태의 해밀토니안 을 이용한 몬테 카를로 시뮬레이션으로 연구하였다. 표면 편석 현상을 질서-무질서 상전이 현상과 연관 시켜 고려함으로서 기존의 편석과 질서에 관한 실험 결과들을 좀 더 구체적으로 이해하게 하였다. PtxNi1-x{111} 의 경우 표면편석 현상은 덩어리의 상전이 온도 이전에서부터 나타나며 이는 표면이 덩어 리의 단면 형태의 질서와는 다른 화학적 질서를 갖는 특징에 기인하는 것임을 보았다. 표면 근방에만 한정된 진동하는 형태의 표면 편석현상을 보았고 이는 실험결과들과도 잘 일치하는 것을 알 수 있었다.

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.102-103
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• 2001

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.67-71
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• 2014

An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.

• 한국전기화학회:학술대회논문집
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• 1999.04a
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• pp.10-10
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.203-203
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• 2011

The importance of stepped single-crystal surfaces as model catalysts has been well recognized [1]. We re-investigated the adsorption properties of $H_2$ and CO, most important species in platinum-based catalysts, on nearly defect-free and highly stepped surfaces of one and the same Pt(111) crystal. While both being symmetric and single-peaked from the nearly defect-free surface, temperature-programmed desorption (TPD) spectra from the highly stepped surface saturated at 90 K with H and CO were triply- and doubly-peaked, respectively. Once pre-adsorbed, CO preempted step and then terrace sites, inhibiting the dissociative $H_2$ adsorption completely. Pre-adsorbed H inhibited the CO adsorption on terrace sites only, leaving defect sites intact for CO adsorption even at the saturation H precoverage. On defect-free Pt(111), while pre-adsorbed CO inhibited the dissociative $H_2$ adsorption completely, pre-adsorbed H could not inhibit the CO adsorption completely. These intriguing, but interesting results are discussed in terms of energetics/kinetics and the role of surface step sites in the dissociative adsorption of $H_2$ on Pt(111) [2].

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.395-395
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• 2010

RIS(Reactive Ion Scattering)은 저 에너지 이온 빔을 쏘아 표면을 분석하는 방법이다. 분자 동력학 계산(MD simulation) 결과에 따르면 $Cs^+$이온은 두꺼운 얼음 표면에서 산란이 거의 일어나지 않는다. 본 연구에서는 이와 달리 Pt(111)과 Ru(0001) 표면에 생성시킨 두꺼운 얼음 표면에서 $Cs^+$이온 산란 실험이 가능함을 보였다. 한편, RIS signal은 얼음 층이 쌓인 구조나 두께에 따라 영향을 받는데, Ru(0001)과 Pt(111)의 표면에 생성시킨 crystalline water ice에서 시간과 water ice film의 두께가 RIS signal에 어떠한 영향을 미치는지도 조사하였다.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.145-151
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• 1993

Ultra High Vacuum chamber for surface analysis and a series of AES-LEED controllers for LEED optics was designed and constructed. Electron energy resolution of LEED optics was tested. On the basis of the layer by layer mode, thickness of evaporated Ni on Pt(111) was calculated from the Auger signal ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.06a
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• pp.125-125
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• 1998

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.74-77
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• 2000

Ta-doped PZT thin films prepared by reactive co-sputtering method could be transformed into single grained perovskite structure utilizing physical etching of Pt bottom electrode. It is found that PZT perovskite phase on damaged (111) Pt electrode by IMD was more easily crystallized than random oriented Pt electrode and less crystallized than (111) Pt electrode. This shows that amorphized Pt electrode surface by IMD process has an effect on crystallization of PZT perovskite phase. 40$\mu\textrm{m}\times40\mu\textrm{m}$ square shape single grain PZT array could be obtained utilizing the difference of incubation time for nucleation of rosettes between ion damaged Pt and (111) oriented Pt electrode. Single grained PZT thin films show low leakage current density of $1\times10^{-7}$ A/$\textrm{cm}^2$ and high break down field of 440kV/cm. The loss of remanent polarization after $10^{11}$ cycles was less than 15% of initial value.