• Journal of the Korean association of regional geographers
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• v.22 no.1
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• pp.251-266
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• 2016

Intelligent interpolation methods such as dasymetric mapping are considered to be the best way to disaggregate zone-based population data by observing and utilizing the internal variation within each source zone. This research reviews the advantages and problems of the dasymetric mapping method, and presents a geographically weighted regression (GWR) based method to take into consideration the spatial heterogeneity of population density - land cover relationship. The locally adaptive intelligent interpolation method is able to make use of readily available ancillary information in the public domain without the need for additional data processing. In the case study, we use the preclassified National Land Cover Dataset 2011 to test the performance of the proposed method (i.e. the GWR-based multi-class dasymetric method) compared to four other popular population estimation methods (i.e. areal weighting interpolation, pycnophylactic interpolation, binary dasymetric method, and globally fitted ordinary least squares (OLS) based multi-class dasymetric method). The GWR-based multi-class dasymetric method outperforms all other methods. It is attributed to the fact that spatial heterogeneity is accounted for in the process of determining density parameters for land cover classes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.60-69
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• 2000

This paper describes a single-chip full-custom implementation of pipelined adaptive decision-feedback equalizer(PADFE) using a 0.25-${\mu}m$ CMOS technology for wide-band wireless digital communication systems. To enhance the throughput rate of ADFE, two pipeline stages are inserted into the critical path of the ADFE by using delayed least-mean-square(DLMS) algorithm. Redundant binary (RB) arithmetic is applied to all the data processing of the PADFE including filter taps and coefficient update blocks. When compared with conventional methods based on two's complement arithmetic, the proposed approach reduces arithmetic complexity, as well as results in a very simple complex-valued filter structure, thus suitable for VLSI implementation. The design parameters including pipeline stage, filter tap, coefficient and internal bit-width, and equalization performance such as bit error rate (BER) and convergence speed are analyzed by algorithm-level simulation using COSSAP. The single-chip PADFE contains about 205,000 transistors on an area of about $1.96\times1.35-mm^2$. Simulation results show that it can safely operate with 200-MHz clock frequency at 2.5-V supply, and its estimated power dissipation is about 890-mW. Test results show that the fabricated chip works functionally well.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.44 no.4 s.316
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• pp.28-35
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• 2007

Airbone laser altimeters have been utilized for 3D topographic mapping of the earth, moon, and planets with high resolution and accuracy, which is a rapidly growing remote sensing technique that measures the round-trip time emitted laser pulse to determine the topography. The traveling time from the laser scanner to the Earth's surface and back is directly related to the distance of the sensor to the ground. When there are several objects within the travel path of the laser pulse, the reflected laser pluses are distorted by surface variation within the footprint, generating multiple echoes because each target transforms the emitted pulse. The shapes of the received waveforms also contain important information about surface roughness, slope and reflectivity. Waveform processing algorithms parameterize and model the return signal resulting from the interaction of the transmitted laser pulse with the surface. Each of the multiple targets within the footprint can be identified. Assuming each response is gaussian, returns are modeled as a mixture gaussian distribution. Then, the parameters of the model are estimated by LMS Method or EM algorithm However, each response actually shows the skewness in the right side with the slowly decaying tail. For the application to require more accurate analysis, the tail information is to be quantified by an approach to decompose the tail. One method to handle with this problem is proposed in this study.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.241-246
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• 2001

Single or dual ion implantations were performed onto the transparent polyethylene terephthalate(PET) sheet, and the surface hardness and the light transmittance in the visual-UV range were examined. Nanoindentation showed that the surface hardness was the highest at about 50 nm depth from the surface and was increased by about 3 times when nitrogen ions were implanted with energy and dose of 90 keV and $1\times10^{15}\textrm{/cm}^2$ respectively. When dual ions such as He+N and N+C ions were implanted into PET, the hardness was increased even more than the case only N ions were implanted. Especially, when PET were implanted with N+C dual ions, the surface hardness of PET increased 5 times more as compared to when implanted with N ions alone. The light at the 550 nm wavelength(visual range) transmitted more than 85%, which is close to that of as-received PET, and at the wavelength below 300 nm(UV range) the rays were absorbed more than 95% as traveling through the sheet. implying that there are processing parameters which the ion implanted PET maintains the transparency and absorbs the UV rays. It can be considered that the increase in the hardness of polymeric materials is attributed to not only cross linking but also forming hard inclusions such as hard C-N compounds, as evidenced by the formation of the highest hardness when both N and C ions are implanted onto PET.

• Imaging Science in Dentistry
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• v.42 no.3
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• pp.183-190
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• 2012

Purpose: The purpose of this study was to investigate the level of clinical image quality of panoramic radiographs and to analyze the parameters that influence the overall image quality. Materials and Methods: Korean dental clinics were asked to provide three randomly selected panoramic radiographs. An oral and maxillofacial radiology specialist evaluated those images using our self-developed Clinical Image Quality Evaluation Chart. Three evaluators classified the overall image quality of the panoramic radiographs and evaluated the causes of imaging errors. Results: A total of 297 panoramic radiographs were collected from 99 dental hospitals and clinics. The mean of the scores according to the Clinical Image Quality Evaluation Chart was 79.9. In the classification of the overall image quality, 17 images were deemed 'optimal for obtaining diagnostic information,' 153 were 'adequate for diagnosis,' 109 were 'poor but diagnosable,' and nine were 'unrecognizable and too poor for diagnosis'. The results of the analysis of the causes of the errors in all the images are as follows: 139 errors in the positioning, 135 in the processing, 50 from the radiographic unit, and 13 due to anatomic abnormality. Conclusion: Panoramic radiographs taken at local dental clinics generally have a normal or higher-level image quality. Principal factors affecting image quality were positioning of the patient and image density, sharpness, and contrast. Therefore, when images are taken, the patient position should be adjusted with great care. Also, standardizing objective criteria of image density, sharpness, and contrast is required to evaluate image quality effectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.133-133
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• 2008

Recently, as the down-scailing of field-effect transistor devices continues, Schottky-barrier field-effect transistors (SB-FETs) have attracted much attention as an alternative to conventional MOSFETs. SB-FETs have advantages over conventional devices, such as low parasitic source/drain resistance due to their metallic characteristics, low temperature processing for source/drain formation and physical scalability to the sub-10nm regime. The good scalability of SB-FETs is due to their metallic characteristics of source/drain, which leads to the low resistance and the atomically abrupt junctions at metal (silicide)-silicon interface. Nevertheless, some reports show that SB-FETs suffer from short channel effect (SCE) that would cause severe problems in the sub 20nm regime.[Ouyang et al. IEEE Trans. Electron Devices 53, 8, 1732 (2007)] Because source/drain barriers induce a depletion region, it is possible that the barriers are overlapped in short channel SB-FETs. In order to analyze the SCE of SB-FETs, we carried out systematic studies on the Schottky barrier overlapping in short channel SB-FETs using a SILVACO ATLAS numerical simulator. We have investigated the variation of surface channel band profiles depending on the doping, barrier height and the effective channel length using 2D simulation. Because the source/drain depletion regions start to be overlapped each other in the condition of the $L_{ch}$~80nm with $N_D{\sim}1\times10^{18}cm^{-3}$ and $\phi_{Bn}$ $\approx$ 0.6eV, the band profile varies as the decrease of effective channel length $L_{ch}$. With the $L_{ch}$~80nm as a starting point, the built-in potential of source/drain schottky contacts gradually decreases as the decrease of $L_{ch}$, then the conduction and valence band edges are consequently flattened at $L_{ch}$~5nm. These results may allow us to understand the performance related interdependent parameters in nanoscale SB-FETs such as channel length, the barrier height and channel doping.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.1A
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• pp.26-34
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• 2002

Mobile telecommunication systems such as IS-95 and IMT-2000 employ frame based communication using frames up to 20 msec in length and the receiving end has to store the whole frome before it is being processed. The size of the frame buffer ofter dominates those of the processing unit such as soft decision Viterbi decoder. The frame buffer for IMT-2000, for example, has to be increased 80 times as large as that of IS-95. One of the parameters deciding the number of bits in a frame will be obviously the number of bits in soft quantization. Start after striking space key 2 times. This paper has studied a new aspect of offset and quantization step size on BER performance and proposes a new 3-bit soft quantization algorithm which shows similar performance as that of 4-bit soft decision Viterbi receiver. The optimal offset values and step sizes for the other practical quantization levels ---16, 8, 4, 2--- have also been found. In addition, a new optimal symbol metric table has been devised which takes the accumulation value of various repeated signals and produces a rescaled 3-bit valu.tart after striking space key 2 times.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.48 no.5
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• pp.88-98
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• 2011

Recently, according as the importance of GIS(geography information system) database security is embossed, much researches had been achieved about GIS network security. But most such researches are weak against sourceful illegal reproductions and distributions of GIS vector data map. In this paper, we proposed an efficient layer unit contents based partial encryption technique in the vector map compression domain to prevent illegal distributions and unauthorized accesses. This method achieves a partial encryption about each central coordinate and directional parameters of a MCA(minimum coding attribute) that is created at the vector map compression processing in the vector space. First, the position encryption is applied as permutating randomly the center coordinate of each record that is minimum unit of vector map shape. And second, the direction encryption that changing shapes of vector map topography is applied as encrypting the direction of vertices's coordinates of each record. In experimental results, we confirmed that our proposed method can encipher the large volumed vector map data effectively in low computational complexity. Also, we could minimize the decline of compression efficiency that occurred by conventional contents based encryption schemes using AES or DES algorithms.