• Journal of Welding and Joining
• /
• v.26 no.3
• /
• pp.30-36
• /
• 2008

A flip-chip bonding system using IR laser with a wavelength of 1064 nm was developed and associated process parameters were analyzed using Taguchi methods. An infrared laser beam is designed to transmit through a silicon chip and used for transferring laser energy directly to micro-bumps. This process has several advantages: minimized heat affect zone, fast bonding and good reliability in the microchip bonding interface. Approximately 50 % of the irradiated energy can be directly used for bonding the solder bumps with a few seconds of bonding time. A flip-chip with 120 solder bumps was used for this experiment and the composition of the solder bump was Sn3.0Ag0.5Cu. The main processing parameters for IR laser flip-chip bonding were laser power, scanning speed, a spot size and UBM thickness. Taguchi methods were applied for optimizing these four main processing parameters. The optimized bump shape and its shear force were modeled and the experimental results were compared with them. The analysis results indicate that the bump shape and its shear force are dominantly influenced by laser power and scanning speed over a laser spot size. In addition, various effects of processing parameters for IR laser flip-chip bonding are presented and discussed.

• Proceedings of the Korean Fiber Society Conference
• /
• 1999.10a
• /
• pp.464-467
• /
• 1999

• Proceedings of the Korean Fiber Society Conference
• /
• 1987.06a
• /
• pp.15-15
• /
• 1987

• Proceedings of the Korean Society of Rheology Conference
• /
• 2002.05a
• /
• pp.41-44
• /
• 2002

• Journal of the Korean Ceramic Society
• /
• v.52 no.6
• /
• pp.395-402
• /
• 2015

The suspension plasma spray (SPS) technique has been used to obtain dense $Y_2O_3$ coatings and to overcome the drawbacks of the conventional air plasma spray (APS). SPS uses suspensions containing micrometer or sub-micrometer sized powders dispersed in liquid media. In this study, microstructure developments and mechanical properties have been investigated as functions of particle size of source material and plasma processing parameters such as plasma power and stand-off distance. The microstructure of the coating was found to be highly related to the particle size and the plasma processing parameters, and it was directly reflected in the hardness and the adhesion strength. When fine powder (BET $16.4m^2/g$) was used as a raw material in the suspension, there was, with increasing stand-off distance, a change from a dense structure with a slightly bumpy surface to a porous structure with a cauliflower-like surface. On the other hand, when a coarse powder (BET $2.8m^2/g$) was used, the coating density was lower, with microscopic splats on the surface. Using fine $Y_2O_3$ powders, the coating layer with an optimum short stand-off distance showed a high hardness of approximately 90% of that of sintered $Y_2O_3$ and an adhesion strength several times higher than that of the coating by conventional APS.

• Journal of Sensor Science and Technology
• /
• v.24 no.1
• /
• pp.10-14
• /
• 2015

This paper reports the results of a study on the optimization of the etching profile, which is an important factor in deep-reactive-ion etching (DRIE), i.e., dry etching. Dry etching is the key processing step necessary for the development of the Internet of Things (IoT) and various microelectromechanical sensors (MEMS). Large-area etching (open area > 20%) under a high-frequency (HF) condition with nonoptimized processing parameters results in damage to the etched sidewall. Therefore, in this study, optimization was performed under a low-frequency (LF) condition. The HF method, which is typically used for through-silicon via (TSV) technology, applies a high etch rate and cannot be easily adapted to processes sensitive to sidewall damage. The optimal etching profile was determined by controlling various parameters for the DRIE of a large Si wafer area (open area > 20%). The optimal processing condition was derived after establishing the correlations of etch rate, uniformity, and sidewall damage on a 6-in Si wafer to the parameters of coil power, run pressure, platen power for passivation etching, and $SF_6$ gas flow rate. The processing-parameter-dependent results of the experiments performed for optimization of the etching profile in terms of etch rate, uniformity, and sidewall damage in the case of large Si area etching can be summarized as follows. When LF is applied, the platen power, coil power, and $SF_6$ should be low, whereas the run pressure has little effect on the etching performance. Under the optimal LF condition of 380 Hz, the platen power, coil power, and $SF_6$ were set at 115W, 3500W, and 700 sccm, respectively. In addition, the aforementioned standard recipe was applied as follows: run pressure of 4 Pa, $C_4F_8$ content of 400 sccm, and a gas exchange interval of $SF_6/C_4F_8=2s/3s$.

• Korean Journal of Human Ecology
• /
• v.5 no.1
• /
• pp.62-70
• /
• 2002

The objective of this study was to evaluate the effects of processing parameters of co-rotating twin screw extruder and dry methods on the level of resistant starch (RS) and the properties of extrudate prepared from normal maize starch. The processing parameters were used 90, 110, 130$^{\circ}C$ in temperature, 25.0~30.0% in moisture content, 150, 200, 250 rpm in screw speed and hot and cool air drying and drying after refrigerating in drying methods. The barrel temperature and drying methods had affected the level of resistant starch of extrudate. RS levels of extrudates were ranged from 2.4 to 15.5% by AOAC method. The extrudates, extruded at 110$^{\circ}C$ and then stored at 4$^{\circ}C$, showed the highest level of RS level (15.5%). Water absorption index increased with increasing moisture content and peak temperatures and viscosities of extudates decreased compare to that of raw starch from 94$^{\circ}C$ to 50~65$^{\circ}C$ and from 220 to 46~98 RVU, respectively. Extudates treated in 90$^{\circ}C$ and 110$^{\circ}C$ showed strong peak at $2{\theta}=6.7{\sim}17.0^{\circ}$ by X-ray diffractometry and had ~150$^{\circ}C$ endotherm like as that of RS3 starch by differential scanning calorimetry. In case of 130$^{\circ}C$, extrudates showed strong peak at $2{\theta}=20.0^{\circ}$ and had 106$^{\circ}C$ endotherm.

• Electrical & Electronic Materials
• /
• v.15 no.9
• /
• pp.10-14
• /
• 2002

Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure flow rate input power density) and a various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimizations.

• 한국가시화정보학회:학술대회논문집
• /
• 2003.11a
• /
• pp.111-114
• /
• 2003

Drop size is one of the most important parameters which are control the performance of the engine using liquid fuel/oxidizer and drop formation is mainly controlled by aerodynamic force caused by ambient gas. Because of this, empirical data and correlation acquired under standard ambient condition are not valid. So experiments under high ambient pressure condition to measure the drop size using image processing method And find the empirical correlation between SMD and chamber pressure(density), injection velocity.

• Proceedings of the Korea Information Processing Society Conference
• /
• 2016.10a
• /
• pp.114-116
• /
• 2016

Recently, SDN and NFV technology have been developed actively and provide enormous flexibility of network provisioning. The future network services would generally involve many different types of services such as hologram games, social network live streaming videos and cloud-computing services, which have dynamic service requirements. To provision networks for future services dynamically and efficiently, SDN/NFV orchestrators must clearly understand the service requirements. Currently, network provisioning relies heavily on QoS parameters such as bandwidth, delay, jitter and throughput, and those parameters are necessary to describe the network requirements of a service. However it is often difficult for users to understand and use them proficiently. Therefore, in order to maintain interoperability and homogeneity, it is required to have a service abstraction layer between users and orchestrators. The service abstraction layer analyzes ambiguous user's requirements for the desired services, and this layer generates corresponding refined services requirements. In this paper, we present our initial effort to design a Smart Service Abstraction Layer (SmSAL) for future network architecture, which takes advantage of machine learning method to analyze ambiguous and abstracted user-friendly input parameters and generate corresponding network parameters of the desired service for better network provisioning. As an initial proof-of-concept implementation for providing viability of the proposed idea, we implemented SmSAL with a decision tree model created by learning process with previous service requests in order to generate network parameters related to various audio and video services, and showed that the parameters are generated successfully.