• 제목/요약/키워드: Preferential growth

검색결과 113건 처리시간 0.024초

Thermal treatment effect of $CaF_2$ films for TFT gate insulator applications

  • Kim, Do-Young;Park, Suk-Won;Junsin Yi
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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    • pp.145-148
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    • 1998
  • Fluoride({{{{ { CaF}_{2 } }}}}) films exhibited a cubic structure with similar lattice constant to that of Si and have sufficient breakdown electric field as gate dielectric material. Therefore, {{{{ { CaF}_{2 } }}}} are expected to replace conventional insulator such {{{{ { SiO}_{ 2},{Ta}_{2}{O}_{ 2} and{Al}_{2}{O}_{5}. However, {CaF}_{2}}}}} films showed hystereisis properties due to mobile charges in the film. To solve this problem we performed thermal treatment and achieves field. C-v results indicate a reduced hystereisis window of {{{{ }}}}ΔV =0.2v, LOW INTERFACE STATE {{{{{D}_{it}=2.0 TIMES {10}^{11}{cm}^{-1}{eV}^{-1}}}}} in midgap, and good WIS diode properties. We observed a preferential crystallization of(200) plane from XRD analysis. RTA treatment effects on various material properties of {{{{{CaF}_{2}}}}} are presented in this paper.

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기계적 후면 손상이 레이저/극초단파 광전도 기법에 의한 소수 반송자 재결합 수명 측정에 미치는 영향 (Effect of mechanical backside damage upon minority carrier recombination lifetime measurement by laser/microwave photoconductance technique)

  • 조상희;최치영;조기현
    • 한국결정성장학회지
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    • 제5권4호
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    • pp.408-413
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    • 1995
  • 초크랄스키 실리콘 기판의 뒷면에 형성된 기계적 손상이 레이저 여기/극초단파 반사 광전도 감쇠법에 의한 소수반송자 재결합 수명 측정에 미치는 영향을 고찰하였다. 기계적손상의 정도는 X-선 이중결정 회절법과 X-선 단면 측정법 및 습식산화/선택적 식각 방법으로 평가하였다. 그 결과, 웨이퍼 뒷면에 가해지는 기계적 손상의 세기가 강할수록 소수반송자 재결합 수명은 짧아지고, 소수반송자 재결합 수명 측정에 영향을 미치는 반치전폭의 임계값은 약13초임을 알 수 있다.

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Structure and chemical properties of TiO2 surfaces on C fiber

  • Kim, Myoung-Joo;Kim, Kwang-Dae;Dey, Nilay Kumar;Seo, Hyun-Ook;Kim, Dong-Wun;Jeong, Myoung-Geun;Kim, Young-Dok
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.81-81
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    • 2010
  • Growth of TiO2 films prepared by atomic layer deposition (ALD) was studied on C fiber. Moreover, adsorption and photocatalytic decomposition of methylene blue on TiO2 thin films were studied. Preferential growth of TiO2 on steps of C surfaces could be identified by scanning electron microscopy (SEM). X-ray Photoelectron Spectroscopy (XPS) showed thickness-dependent positive core level shift of Ti, which can be interpreted in terms of enhanced final state charging for thicker films. Adsorption and photocatalytic behaviors of TiO2 thin films will be discussed in this poster.

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Surface and Interface Analysis with Medium Energy Ion Scattering Spectroscoppy

  • Moon, Dae-Wom
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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    • pp.129-129
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    • 1998
  • Most of the surface/interface analysis tools have limited depth profiling c capability in terms of the profiling range and the depth resolution. However, M MEIS can profile the surface and subsurface composition and structure q quantitatively and non-destructively with atomic layer depth resolution. I In this presentation, the MEIS system developed at KRISS will be briefly d described with an introduction on the principle of MEIS. Recent MEIS r results on the surface and interface composition and structural change due to i ion bombardment will be presented for preferential sputtering of T:없Os and d damage depth profiles of SHooD, Pt(l11), and Cu(l1D due to Ar+ ion b bombardment. Direct observation of strained Si lattices and its distribution i in the SHool)-SiCh interface and the initial stage of Co growth on Pt(l11) w will be reported. H surfactant effects on epitaxial growth of Ge on Si(ooD w will be discussed with STM results from SND.

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Al-Si이원계 합금의 응고현상에 미치는 정수압의 영향(I);금속 조직적 연구 (Effects of Hydrostatic Pressure on Solidification Phenomena of Al-Si binary alloys(I);Metallurgical Study)

  • 한요섭;김도향;이호인
    • 한국주조공학회지
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    • 제6권2호
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    • pp.116-121
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    • 1986
  • The effects of pressure during solidification on macro-and micro-structures have been studied in pure aluminium and Al-Si alloys. The application of pressure during solidifcation accelerated both equiaxed and columnar dendritic-growth due to stimulating of equiaxed survival and faster preferential growth of primary dendrites against the parallel direction of heat flow. Burden-Hunt model was modified to express the significant changes of CET behaviours under pressure. A further point to be noted was that greatly fine eutectic silicon flakes ($0.5\;{\times}\;13{\mu}m$) with the decrease of halo layers ($7{\mu}m$) of aluminium riched phases in the periphery of primary silicon particles were observed when pressure was applied during solidification.

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$ZnWO_4$ 단결정 성장 ($ZnWO_4$ Single Crystal Growth)

  • 임창성;오권한
    • 한국세라믹학회지
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    • 제23권4호
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    • pp.69-77
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    • 1986
  • Single crystals of zinc tungstates were grown by the Czochralski method. To obtain the seed crystals various methods were employed including 4 points platinum wirse which dipped the melt and the capillary action from the melt led the 3 differently oriented seeds such as [100], [010] and [001] directions. Optimum growing conditions were observed as neck diameter 2mm rotation speed 50-60 rpm maximum diameter 15mm and pulling rate 0-10 mm/hr. Dendrites covered on the olidified surface in a platinum crucible were turned out to be [001] direction because obviously this crystal has the strong [001] preferential growth habit. The (100) and (010) planes of single crystals showed the slip planes and the (010) plane showed the perfect cleavage surface.

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Buffer layer 를 이용한 저온 $\muC-Si/CaF_2$/glass 박막성장연구 (The Study of Low Temperature $\muC-Si/CaF_2$/glass Film Growth using Buffer layer)

  • 김도영;안병재;임동건;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.589-592
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    • 1999
  • This paper describes direct $\mu$C-Si/CaF$_2$/glass thin film growth by RPCVD system in a low temperature for thin film transistor (TFT), photovoltaic devices. and sensor applications. Experimental factors in a low temperature direct $\mu$ c-Si film growth are presented in terms of deposition parameters: SiH$_4$/H$_2$ ratio, chamber total pressure, substrate temperature, rf power, and CaF$_2$ buffer layer. The structural and electrical properties of the deposited films were studied by means of Raman spectroscopy, I-V, L-I-V, X-ray diffraction analysis and SEM. we obtain a crystalline volume fraction of 61%, preferential growth of (111) and (220) direction, and photosensitivity of 124. We achieved the improvement of crystallinity and electrical property by using the buffer layers of CaF$_2$ film.

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Hepatocyte Growth Factor and Met: Molecular Dialogue for Tissue Organization and Repair

  • Matsumoto, Kunio;Nakamura, Toshikazu
    • Animal cells and systems
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    • 제2권1호
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    • pp.1-8
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    • 1998
  • Hepatocyte growth factor (HGF), originally discovered and cloned as a powerful mitogen for hepatocytes, is a four kringle-containing growth factor which specifically binds to membrane-spanning tyrosine kinase, c-Met/HGF receptor. HGF has mitogenic, motogenic (enhancement of cell movement), morphogenic (e.g., induction of branching tubulogenesis), and anti-apoptotic activities for a wide variety of cells. During embryogenesis, HGF supports organogenesis and morphogenesis of various tissues, including liver, kidney, lung, gut, mammary gland, and tooth. In adult tissues HGF elicits an organotrophic function which supports regeneration of organs such as liver, kidney, lung, and vascular tissues. HGF is also a novel member of neurotrophic factor in nervous systems. Together with the preferential expression of HGF in mesenchymal or stromal cells, and c-Met/HGF receptor In epithelial or endothelial cells, the HGF-Met coupling seems to orchestrate dynamic morphogenic processes through epithelial-mesenchymal (or-stromal) interactions for organogenesis and organ regeneration. HGF or HGF gene may well become unique therapeutic tools for treatment of patients with various organ failure, through its actions to reconstruct organized tissue architectures. This review focuses on recently characterized biological and physiological functions integrated by HGF-Met coupling during organogenesis and organ regeneration.

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Electron Beam Floating Zone Melting에 의한 몰리브덴의 정련 및 단결정 성장에 관한 연구 (Purification and Single Crystal Growth of Molybdenum by Electron Beam Floating Zone Melting)

  • 최용삼;지응준
    • 한국결정학회지
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    • 제3권2호
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    • pp.85-97
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    • 1992
  • EBFZM( Electron Beam Floating Zone Melting) 법을 이용하여 몰리브덴에서의 금속계 불순물과 침입형 불순물의 정련기구 및 단결정 성장기구를 연구하 였다. Fe, Cr, Co등의 금속계 불순물은 몰리브덴과의 평형증기압의 차이에 따른 불순물의 선택적 증발에 의하여 우수한 정련효과를 나타내며, 몰리브덴보다 응점이 높은 Ta, W는 잘 제거되지 않았다. 한편 대역 정제에 의한 정련효과는 미약함을 확인하였다. EBF ZM은 C,0,N등의 침입형 불순물의 정련에도 효과적 이었다. 본 연구의 모든 조건에서 몰리브덴은 단결정으로 성장하였으며 2차 재결정 epitaxy에 의한 단결 정 성장기구가 제시되었다. 몰리브덴 단결정 내의 전 위밀도는 strain-anneal법에 의한 단결정의 경우보다 높았으며,본 실험의 열처리 조건에서는 변화하지 않았다. The purification and single crystal growth mechanisms of molybdenum were analysed in EBFZM ( electron beam floating zone melting). Metallic impurities of Fe, Cr, Co were purified efficiently but Ta and W were not removed well in this study. It was due to a preferential evaporation of the elements caused by the difference in equillibrium vapor pressure between the elements and molybdenum. The pu- rification effect by zone refining was not significant. The EBFZM also refined the interstitial impurities of C, 0 and N, effectively. The single crystals of molybdenum were grown regardless of the experimental conditions and the secondary recrystallization epitaxy was surge sled as a growth mechanism. The dislocation density in single crystal was higher than that by strain-anneal method, and was not reduced by heat treatments.

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Urea와 THAMP 유기 단결정의 육성에 관한 연구 (Studies on the growth of organic single crystals of urea and THAMP)

  • 임창성;황완인;김판채
    • 한국결정성장학회지
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    • 제5권3호
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    • pp.223-232
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    • 1995
  • Urea($(NH_2)_2CO$) 및 THAMP(Tris(hydroxymethyl)aminomethane phosphate) 유기 단결정은 레이저의 파장변환소자등의 응용에 유용한 새로운 유기 비선형 광학재료(NLO)이다. 온도하강법과 온도차법을 이용하여 urea와 THAMP 유기 단결정의 육성을 시도하였으며 이들 방법에 따른 육성조건을 확립하였다. Urea의 용매로는 용해도의 측정을 통하여 메탄올이 가장 적합하였으며, 용해도에 대한 온도계수는 posotive였으며, 용해열은 - 2.58 kcal/mol이었다. 육성된 urea 결정은 z축의 성장이 지배적이었고, z축의 성장제어와 x, y축의 성장을 위하여 $NH_4_H_2PO_4$, KCL, $H_3PO_4$, $CaCl_2{\cdot}2H_2O$, $C_2H_5OH$의 첨가제를 사용하여 z축의 성장제어와 x, y축의 성장을 증진시켰다. THAM과 $H_3PO_4$의 화학 양론적 혼합비 1 : 1의 몰비로부터 양질의 THAMP 유기 단결정을 육성하였고 용해도에 대한 온도계수는 positive였으며, 용해열은 - 1.70 kcal/mol이었다.

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