• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.956-959
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• 2005

High Tc superconducting with a BiSrCaCuO was prepared by the titrate method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12 h is not in the amorphous state as expected but in a crystalline state. X-tay diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.1044-1052
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• 1994

Tape casting technique was successfully applied to produce porous ceramics and multi-layered ceramics containing porous layers, where spherical hollow polymer particles were introduced as pore precursors. In the presence of extreme differences in density and size between Al2O3 and pore precursor particles, hindered settling was effective in preventing segregation of component particles and packing behavior of mixed powders was improved through bimodal packing. There were two transitions in packing behavior of mixed powders. The first transition took place at 40~50 vol% pore precursor addition, where majority of pores changed from close to open pore state. The other transition occured at 60~70 vol% pore precursor addition, where pore precursor particles formed a continuous network structure.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.177-181
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• 1997

Epitaxial films of cubic silicon carbide (3C-SiC, $\beta$-SiC) have been grown on Si(001) and Si(111) substrates by high vacuum chemical vapor deposition using the single precursor 1,3-disilabutane, $H_3SiCH_2SiH_2CH_3$, at temperatures 900~$100^{\circ}C$. The advantage of using the single precursor over the covnentional chemical vapor deposition is evident in that the source chemical is safe to handle, carbonization of the substrates is not necessary, accurate stoichiometry of the silicon carbide films is easily achieved, and the deposition temperature is much lowered. The films were characterized by XPS, XRD, SEM, RHEED, RBS, AES, and TED.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.141-147
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• 2003

Silicon carbide thin film was deposited in APCVD and LPCVD system with 1,3-DSB precursor 1,3-DSB is the single precursor to deposit SiC on Si at low temperature. SiC film was deposited at $850^{\circ}C$ lower than ordinary temperature ($1000~1200^{\circ}C$) in CVD process. SiC thin film glowed to high oriented (111) plane in APCVD system. In LPCVD system, SiC film groved to preferred (220) plane at same temperature. This discrepancy between preferred planes can be described by the difference of deposition mechanism. Amorphous phase and crystal defect were observed in APCVD system with the main growth mechanism of mass transport limited region. But in LPCVD system, we got the SIC film of uniform, faceted structure and high quality.

• Journal of Powder Materials
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• v.6 no.1
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• pp.75-80
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• 1999

The formation of $n-TiO_2$ powder by oxidation of Ti-ethoxied vapor in a flat flame burner reactor maintained under 20 torr has been studied. The produced powder were characterized in terms of crystal structure, chemical composition by XRD and TEM. The results showed that the powder consisted of loose agglomerated anatase and rutile particles and their size were about 10 nm and 20 nm, respectively. In the course of synthesis, changes of the flame color were happened to each condition during heating up the bubbler. The flame color transition phenomena reveled that a critical precursor delivery rate was needed for the powder formation (obtainable powder yield). The critical precursor delivery rate was estimated by a simple function of the bubbler temperature and the carrier gas flow rate. The critical precursor delivery rate was reviewed as an important variable of the nanopowder synthesis.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.354-358
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• 1996

High indium incorporation was observed in InGaAs growth by precursor alternating metalorganic chemical vapor deposition (PAMOCVD). A possible mechanism of high indium incorporation into the crystal in PAMOCVD was proposed by considering the decomposition products of gallium and indium precursors, and thus the different adsorption behavior of the decomposed precursor molecules.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.65-68
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• 1999

A well oriented Bi2212 superconductor thick films were fabricated by screen printing with a Cu-free Bi-Sr-Ca-O mixture powder on a copper plate and heat-treating at 820-88$0^{\circ}C$ for several minute in air. During the heat-treatment, the printing layer partially melted by reaction between the Cu-free precursor and CuO of the oxidizing copper plate. In the partial melting state, it is believed that the solid phase is Bi-free phase and Cu-rich phase and the composition of the liquid is around Bi : Sr : Ca : Cu = 2 : 2 : 0 : 1. Following the partial melting, the Bi2212 superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. With decreasing the Bi composition in the precursor powder, the critical temperature(T$_{c}$) of the fabricated Bi2212 thick film increased to about 79 K.K.

• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.114-118
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• 2009

A new Zn/O single source precursor, TMEDA-Zn$(eacac)_2$, has been synthesized by using N, N, N’, N’-tetramethylethylendiamine (TMEDA), sodium ethyl-acetoacetate, and $ZnCl_2$. From this organometallic precursor, ZnO thin films have been successfully grown on Si (100) substrates through the metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions in the temperature range of 390~430 ${^{\circ}C}$. The synthesized ZnO films have been found to possess average grain sizes of about 70 nm with an orientation along the c-axis. The precursor and ZnO films are characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, EI-FAB-spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

• Journal of Magnetics
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• v.20 no.1
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• pp.21-25
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• 2015

Fine Nd-Fe-B-type particles were prepared by ball milling of different types of Nd-Fe-B precursor materials, such as die-upset magnet, HDDR-treated material, and sintered magnets. Coercivity dependence on the grain and particle size of the powder was investigated. Coercivity of the milled particles was reduced as the particle size decreased, and the extent of coercivity loss was dependent upon the precursor material. Coercivity loss in the finely milled particles was attributed to the surface oxidation. The extent of coercivity loss in the fine particles was closely linked to grain size of the precursor materials. Coercivity loss was more profound for the fine particles with larger grain size. Contrary to the fine particles from the sintered magnets with larger grain size the fine particles (~10 um) from the die-upset magnet and HDDR-treated material with much finer grain size still retained high coercivity (> 10 kOe for die-upset magnet, > 4 kOe for HDDR-treated material).

• Journal of Microbiology and Biotechnology
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• v.29 no.3
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• pp.392-400
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• 2019

Chondroitin, the precursor of chondroitin sulfate, which is an important polysaccharide, has drawn significant attention due to its applications in many fields. In the present study, a heterologous biosynthesis pathway of chondroitin was designed in a GRAS (generally recognized as safe) strain C. glutamicum. CgkfoC and CgkfoA genes with host codon preference were synthesized and driven by promoter Ptac, which was confirmed as a strong promoter via GFPuv reporter assessment. In a lactate dehydrogenase (ldh) deficient host, intracellular chondroitin titer increased from 0.25 to 0.88 g/l compared with that in a wild-type host. Moreover, precursor enhancement via overexpressing precursor synthesizing gene ugdA further improved chondroitin titers to 1.09 g/l. Chondroitin production reached 1.91 g/l with the engineered strain C. glutamicum ${\Delta}L-CgCAU$ in a 5-L fed-batch fermentation with a single distribution $M_w$ of 186 kDa. This work provides an alternative, safe and novel means of producing chondroitin for industrial applications.