• Journal of the Korean Electrochemical Society
• /
• v.7 no.1
• /
• pp.44-48
• /
• 2004

The two-component type enzyme amplified amperometric DNA assay is described to use an ambient $O_2$ of the substrate of the DNA labeling enzyme. Although the assay detects DNA only at > 0.5M concentration, a concentration $\~10^6$ fold higher than the sandwich-type enzyme amplified amperometric DNA assay, it can be run with an always available substrate. The assay utilizes screen-printed carbon electrodes (SPEs) which were pre-coated by a co-electrodeposited film of an electron conducting redox hydrogel and a 37-base long single-stranded DNA sequence. The DNA in the electron conducting film hybridizes and captures, when present, the 37-base long detection-DNA, which is labeled with bilirubin oxidase (BOD), an enzyme catalyzing the four-electron reduction of $O_2$ to water. Because the redox hydrogel electrically connects the BOD reaction centers to the electrode, completion of the sandwich converts the film from non-electrocatalytic to electrocatalytic for the reduction of $O_2$ to water when the electrode is poised at 200 mV vs. Ag/hgCl. The advantage or the assay over the earlier reported sandwich type enzyme amplified amperometric DNA assay, in which the amplifying enzyme was horseradish peroxidase, is that it utilizes ambient $O_2$ instead of the less stable and naturally unavailable $H_2O_2$.

• Journal of the Korean Vacuum Society
• /
• v.9 no.1
• /
• pp.30-35
• /
• 2000

Indium-Tin Oxide (ITO) thin films were deposited on the commercial glass substrate by rf-magnetron sputtering. The ITO films with the thickness of 2,000~2,400 $\AA$ were prepared by changing the oxygen partial pressures of 2, 3, and 5%, as well as by changing the substrate temperature of $300^{\circ}C$ and $500^{\circ}C$. spectrophotometer, XRD, SEM, AFM, 4-point probe and Hall effect system were employed to characterize the ITO films. The optimum deposition conditions were the substrate temperature of $500^{\circ}C$ and oxygen partial pressure of 2-3%. At theses conditions, the ITO film showed the transmittance of 91%, the resistivity of $5.4\times10^{-3}\Omega$cm, the carrier concentration of $1.0\times10^{19}\textrm{cm}^{-3}$, and the carrier mobility of 150$\textrm{cm}^2$/Vsec. In XRD spectra, the (222) and (400) $In_2O_3$ planes were dominant under the optimum deposition conditions When the substrate was cleaned only by the method of ultrasonic cleaning without both pre-annealing and chemical treatment of the substrate, the ITO film exhibited the transmittance of 86%, the carrier concentration of $5.4\times10^{19}\textrm{cm}^{-3}$ and the mobility of 24$\textrm{cm}^2$/Vsec.

• Korean Journal of Plant Resources
• /
• v.17 no.2
• /
• pp.147-152
• /
• 2004

To increase the utilization of farming lard and the income of farmers four cropping systems by introducing two crops in the cultivation of sesame and perilla were tested from May, 2001 to June, 2002. Weed occurrence was observed abunantly at the in barley＋sesame cropping system. Among cropping systems, weed in barley+sesame was greater in post-crop than in pre-crop, but other cropping systems were in pre-crop. Pre- or post-crops at the barley＋sesame, sesame+chinese cabbage showed good growth. The income of cropping system containing sesame was higher 21％ and 61％ in barley＋sesame and sesame＋chinese cabbage, than in sesame and perilla mono-crop systems respectively. The sesame＋chinese cabbage was labor-saying and cost down cropping system, because polyethylene film of pre-crop was reused in post-crop. But when perilla was introduced as post-crop of sesame, the delayed seed time resulted in decreased growth and grain yield. Soil physical properties were improved at the sesame＋chinese cabbage and barley＋sesame cropping systems.

• Journal of the Korean Vacuum Society
• /
• v.9 no.2
• /
• pp.144-149
• /
• 2000

Variables affecting the passivation capability of Cu(Mg) alloy films, which were sputter deposited from a Cu (4.5 at. %) target, have been investigated. The results show that the passivation capability of a Cu(Mg) alloy film is a function of annealing temperature, $O_2$ pressure, and Mg content in the film. Increasing the annealing temperature up to $500^{\circ}C$ favors formation of a dense MgO layer on the surface which has a growth limited thickness of 150 $\AA$. Decreasing the $O_2$ pressure enhances the preferential oxidation of Mg over Cu. Furthermore, increasing the Mg content in the Cu(Mg) film promotes formation of a dense MgO layer. Vacuum pre-annealing was found to be very effective in segregating Mg to the surface, facilitating the passivation capability of the Cu(Mg) alloy film even when the Mg content is low. In the current study, self-aligned MgO layers with low resistivity and an effective passivation capability over the Cu surface, have been obtained by manipulating these factors when Cu(Mg) thin films are annealed.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2007.11a
• /
• pp.327-328
• /
• 2007

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.407-410
• /
• 2003

We will introduce our new concept deposition system for SMOLED manufacturing in this conference. This system is designed to deposit organic and metal material to downward to overcome the limit of substrate size and process tact time hurdle for OLED mass production, and is organized with organic deposition chamber, substrate pre-cleaning chamber, metal deposition chamber and encapsulation system. These entire process chambers are integrated with linear type substrate transfer system. We also compare our new SMOLED manufacturing system with conventional vacuum deposition systems, and show basic organic thin film property data, organic material deposition property data, and basic device property.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.6
• /
• pp.311-316
• /
• 2002

Two different approaches, namely two-step deposition process and Bias-Enhanced Nucleation (BEN) technique have been examined for deposition of high quality diamond thin film on polycrystalline Ni which has low chemical activity with the carbon neutrals provided from the $CH_4/H_2$mixtures. A two-step deposition process, consisted of pre-deposition of soot layer at lower temperatures and subsequent deposition at higher temperature condition, has been developed to deposit diamond layer directly on Ni substrate. Diamond particles were observed after deposition step at $925^{\circ}C$ for 5 hours and those particles seem to be nucleated from the soot layer pre-deposited at lower temperatures ($810^{\circ}C$). Diamond particles of a substantial size were found on Ni substrate after biasing -220 V for 10 minutes and subsequent deposition for 2 hours while no diamond particles were observed under the conditions without applied bias.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.34.2-34.2
• /
• 2011

The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.

• Korean Journal of Materials Research
• /
• v.1 no.1
• /
• pp.54-61
• /
• 1991

YBCO films deposited on MgO(100) and Si(100) by rf-magnetron sputtering using stoichiometric single target were annealed under oxygen atmosphere at $880^{\circ}C$ for 1 hr. The microstructure and superconducting properties of YBCO thin films depended on the composition of pre-annealed thin films. Basal planesuperconducting particles grown on MgO(100) substrate had small and rod-like shade due to preferred orientation, while superconducting film grown on the basal plane-superconducting particles showed round-shape particles. If pre-annealed thin film had nonstoichiometric composition, liquid phase was formed during the heat treatment, which made it easy for particles to grow in the preferred orientation and thus to form textured structure. But the thin films with the textured structure did not show good superconducting properties, especially $T_c$, since the liquid phase transformed into second phase in the grain boundary during the cooling. The effect of the second phase on $T_{c, \;zero}$ was greater than that on $T_{c, \;on}$.

• Journal of Sensor Science and Technology
• /
• v.9 no.5
• /
• pp.389-395
• /
• 2000

In this paper, we propose the formation of an $Al_2O_3$ pre-layer using a protective Si-oxide layer and Al layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at $800^{\circ}C$ led to the growth of epitaxial $Al_2O_3$ layer on Si(111). And ${\gamma}-Al_2O_3$ layer was grown on the $Al_2O_3$ per-layer. Etching of the Si substrate by $N_2O$ gas could be avoided in the initial growth stage by the $Al_2O_3$ pre-layer. It was confirmed that the $Al_2O_3$ pre-layer was effective in improving the surface morphology of the very thin ${\gamma}-Al_2O_3$ films.