• Title/Summary/Keyword: Pre-film

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An Overview of Liquid Spray Modeling Formed by High-Shear Nozzle/Swirler Assembly

  • Koo, Ja-Ye
    • Journal of Mechanical Science and Technology
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    • v.17 no.5
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    • pp.726-739
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    • 2003
  • A multi-dimensioanl model is being increasingly used to predict the thermo-flow field in the gas turbine combustor. This article addresses an integrated survey of modeling of the liquid spray formation and fuel distribution in gas turbine with high-shear nozzle/swirler assembly. The processes of concern include breakup of a liquid jet injected through a hole type orifice into air stream, spray-wall interaction and spray-film interaction, breakup of liquid sheet into ligaments and droplet,5, and secondary droplet breakup. Atomization of liquid through hole nozzle is described using a liquid blobs model and hybrid model of Kelvin-Helmholtz wave and Rayleigh-Taylor wave. The high-speed viscous liquid sheet atomization on the pre-filmer is modeled by a linear stability analysis. Spray-wall interaction model and liquid film model over the wall surface are also considered.

Diffusion Coefficient of Iron in ZnSe Polycrystals from Metal Phase for mid-IR Gain Medium Application

  • Jeong, Junwoo;Myoung, NoSoung
    • Applied Science and Convergence Technology
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    • v.23 no.6
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    • pp.371-375
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    • 2014
  • Diffusion coefficient of Fe in polycrystalline host ZnSe as a mid-IR gain medium has been measured in the annealing temperature ranges of 850 to $950^{\circ}C$. The synthesis of the samples was carried out in quartz ampoule in which the Fe thin film deposited by physical vapor evaporation method on the ZnSe. One can realize that the diffusion coefficient strongly depends on the surface active surfactants through the cleaning process and the substrate temperature during the thin film deposition leading to $2.04{\times}10^{-9}cm^2/s$ for $Fe^{2+}:ZnSe$. The Annealing temperature dependence of the Fe ions diffusion in ZnSe was used to evaluate the activation energy, $E_a$=1.39 eV for diffusion and the pre-exponential factor $D_0$ of $13.5cm^2/s$.

Temperature cycling test of Cu films on anodized aluminum substrate of metal-PC application

  • Kim, Hyeong-Jin;Park, Jae-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.334-334
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    • 2011
  • We applied N-ion bombardment and heat treatment to the Cu thin films deposited on aluminum oxide layer for the enhancement of adhesion. With e-beam evaporation method. $1,000{\AA}$ thick Cu pre-bombardment layer was deposited on the aluminum oxide surface and then N-ion beam was bombared in order to mix the atoms at the film/substrate interface. Additional $4,000{\AA}$-thick Cu film was the coated. Subsequently, the ion mixide Cu on aluminum oxide was annealed at $200^{\circ}C$ and $300^{\circ}C$ in vacuum.

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Flight Model Development of Linearized Channel Amplifier (선형화 채널 증폭기 비행모델 개발)

  • Hong, Sang-Pya;Go, Yeong-Mok;Yang, Ki-Dug;Ra, Keuk-Hwan
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.8 no.3
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    • pp.83-90
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    • 2009
  • This paper presents the design and measurement of a flight model for a Ku-Band Linearized Channel Amplifier. All MMICs, Variable Gain Amplifier (VGA), Variable Voltage Attenuator ('.IVA), Branch line Coupler and Detector for Pre-distorter are fabricated using a Thin-Film Hybrid process. The performance of the fabricated module is verified through the radio frequency circuit simulation tool and electrical function test in space environment.

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All printed organic thin film transistors with high-resolution patterned Ag nanoparticulate electrode using non-relief pattern lithography

  • Eom, You-Hyun;Park, Sung-Kyu;Kim, Yong-Hoon;Kang, Jung-Won;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.568-570
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    • 2009
  • Octadecyltrichlorosilane (OTS) self-assembled monolayer was selectively patterned by deep ultraviolet exposure, resulting in differential surface state, hydrophilic area with OTS hydrophobic surroundings. High-resolution (<10 ${\mu}m$) nanoparticulate Ag electrodes and organic semiconductors were patterned from simple dip-casting and ink-jetting on the pre-patterned hydrophilic surface, forming all solution-processed organic thin film transistors. The devices typically have shown a mobility of 0.065 $cm^2/V{\cdot}s$ and on-off current ratio of $8{\times}10^5$.

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Lubrication Analysis of Hydraulic Spool Valve with Groove Cross Sectional Shapes (Groove 단면형상에 따른 유압 Spool Valve의 윤활해석)

  • Park, Tae-Jo;Hwang, Yun-Geon
    • Tribology and Lubricants
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    • v.25 no.1
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    • pp.13-19
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    • 2009
  • The spools in most hydraulic spool type control valve have several circumferential grooves to pre-vent well known hydraulic locking problems which result in high friction force and excessive wear. In this paper, a commercial computational fluid dynamics (CFD) code, FLUENT is used to investigate the flow and lubrication characteristics of grooved hydraulic spool valve. The stream lines and pressure distributions are obtained for various groove cross sectional shapes and film thicknesses. The stream lines are highly affected by groove cross sectional shape but pressure distributions mainly depend on the film shape and its magnitude. Therefore the numerical method adopted in this paper and results can be use in designing of various grooved spool valve.

EFFECT OF SUBSTRATE BIAS ON THE DIAMOND GROWTH USING MICROWAVE PLASMA CVD

  • Sakamoto, Yukihiro;Takaya, Matsufumi
    • Journal of Surface Science and Engineering
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    • v.32 no.3
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    • pp.303-306
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    • 1999
  • On the effect of substrate bias at first stage of diamond synthesis at lower substrate temperature(approximately 673K) using microwave plasma CVD and effect of reaction gas system for the bias enhanced nucleation were studied. The reaction gas was mixture of methane and hydrogen or carbon monoxide and hydrogen. The nucleation density of applied bias -150V using $CH_4-H_2$ reaction gas system, significantly higher than that of $C-H_2$ reaction gas system. When the $CH_4-H_2$ reaction was used, nucleation density was increased because of existence of SiC as a interface for diamond nucleation. By use of this negative bias effect for fabrication of CVD diamond film using two-step diamond growth without pre-treatment, fabrication of the diamond film consist of diamond grains $0.2\mu\textrm{m}$ in diameter was demonstrated

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Studies on the Cropping System of Perilla in Middle Provinces of Korea (전.후작물 도입에 의한 중부지역 들깨 작부체계에 관한 연구)

  • 남상영;김인재;김민자;이철희;김태수;박충범
    • Korean Journal of Plant Resources
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    • v.16 no.2
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    • pp.134-140
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    • 2003
  • To increase self-sufficiency ratio and agricultural income, six cropping systems by introducing several crops in perilla were tested from 2001 and 2002. Weed occurrence was high in barley+perilla and safflower+perilla cropping system. Pre-and post-crops in barley+perilla and safflower+perilla showed good growth. Safflower+perilla cropping system was labor-saying and cost down because polyethylene film of pre-crop was reused in post-crop. But when perilla was introduced as post-crop of sesame, delayed seed date resulted in decreased growth and grain yield. The income in barley+perilla and safflower+perilla was greater 4.1fold and 5.2fold, respectively than in perilla mono-crop system. Soil physical properties were improved in order of safflower+perilla, barley+perilla cropping system.

Nucleation and Growth Rate of CVD-W on TiN (TiN상에서의 CVD-W의 핵생상 및 성장속도)

  • Kim, Eui-Song;Lee, Chong-Mu;Lee, Jong-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.11a
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    • pp.28-30
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    • 1992
  • Long incubation period of W nucleation on the TiN glue layer is a serious problem in blanket W process. In this study we investigated the dependence of W nucleation and growth rate on the preparation method of the TiN film, deposition temperature, chemistry, $SiH_4/WF_6$ ratio and sputter etching, ion implantation, and $SiH_4$ flushing pre-treatments. Incubation periods of W nucleation and deposition rates of W growth on three different TiNs are in the order of TiN>RTP-TiN> annealed TiN and TiN${\leq}$RTP-TiN${\leq}$ annealed TiN, respectively. $\beta$-W is not found on TiN substrate even for high $SiH_4/WF_6$ ratio. Sputter etching pre-treatment increases incubation period of W nucleation, while it decreases deposition rate. $SiH_4$ flushing pre-treatment decreases incubation period, but it slightly decreases deposition rate.

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Boiling CHF phenomena in water and FC-72

  • Park, Jongdoc;Fukuda, Katsuya;Liu, Qiusheng
    • Journal of Advanced Marine Engineering and Technology
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    • v.38 no.5
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    • pp.581-588
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    • 2014
  • Extensive researches toward pool boiling characteristics have been widely investigated. However, the correct understanding of its boiling crisis by Critical Heat Flux (CHF) phenomenon during steady and transient heat transfer as a fundamental database for designing heat generation systems is still need to be clarified. The pool boiling CHFs were investigated to clarify the generalized phenomena of transition to film boiling at transient condition. The CHFs were measured on 1.0 mm diameter horizontal cylinder of platinum for exponential heat generation rates with various periods for saturated liquids at atmospheric pressure. The incipience of boiling processes was completely different depending on pre-pressurization. Also, the dependence of pre-pressure in transient CHFs changed due to the wettability of boiling liquids. The trend of typical CHFs were clearly divided into the first, second and third groups for long, short and intermediate periods, respectively. By the effect of pre-pressurization, the boiling incipience mechanism was replaced from that by active cavities entraining vapor to that by the HSN in originally flooded cavies.