• 제목/요약/키워드: Pre-annealing

검색결과 114건 처리시간 0.026초

Robust Parameter Design via Taguchi's Approach and Neural Network

  • Tsai, Jeh-Hsin;Lu, Iuan-Yuan
    • International Journal of Quality Innovation
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    • 제6권1호
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    • pp.109-118
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    • 2005
  • The parameter design is the most emphasized measure by researchers for a new products development. It is critical for makers to achieve simultaneously in both the time-to-market production and the quality enhancement. However, there are difficulties in practical application, such as (1) complexity and nonlinear relationships co-existed among the system's inputs, outputs and control parameters, (2) interactions occurred among parameters, (3) where the adjustment factors of Taguchi's two-phase optimization procedure cannot be sure to exist in practice, and (4) for some reasons, the data became lost or were never available. For these incomplete data, the Taguchi methods cannot treat them well. Neural networks have a learning capability of fault tolerance and model free characteristics. These characteristics support the neural networks as a competitive tool in processing multivariable input-output implementation. The successful fields include diagnostics, robotics, scheduling, decision-making, prediction, etc. This research is a case study of spherical annealing model. In the beginning, an original model is used to pre-fix a model of parameter design. Then neural networks are introduced to achieve another model. Study results showed both of them could perform the highest spherical level of quality.

Optimization of Ohmic Contact Metallization Process for AlGaN/GaN High Electron Mobility Transistor

  • Wang, Cong;Cho, Sung-Jin;Kim, Nam-Young
    • Transactions on Electrical and Electronic Materials
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    • 제14권1호
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    • pp.32-35
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    • 2013
  • In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobility transistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding the ohmic contact and pre-metal-deposition $BCl_3$ etching processes were evaluated in terms of the device performance. In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization scheme under different rapid thermal annealing (RTA) temperature and time. A $BCl_3$-based reactive-ion etching (RIE) method was performed before the ohmic metallization, since this approach was shown to produce a better ohmic contact compared to the as-fabricated HEMTs. A HEMT with a 0.5 ${\mu}m$ gate length was fabricated using this novel manufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductance of 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).

Ion Beam을 이용한 사파이어($Al_2O_3$) 표면개질 및 금(Au) 박막증착: 접합성 향상 및 접학기구에 대한 연구 (Ion beam induced surface modifications of sapphire and gold film deposition: studies on the adhesion enhancement and mechanisms)

  • 박재원;이광원;이재형;최병호
    • 한국진공학회지
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    • 제8권4B호
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    • pp.514-518
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    • 1999
  • Gold (Au) is not supposed to react with sapphire(single crystalline ) under thermodynamic equillibrium, therefore, a strong adhesion between these two dissimilar materials is not expected. However, pull test showed that the gold film sputter-deposited onto annealed and pre-sputtered sapphire exhibited very strong adhesion even without post-deposition annealing. Strongly and weakly adhered samples as a result of the pull testing were selected to investigate the adhesion mechanisms with Auger electron spectroscopy. The Au/ interfaces were analyzed using a new technique that probes the interface on the film using Auger electron escape depth. It revealed that one or two monolayers of Au-Al-O compound formed at the Au/Sapphire interface when AES in the UHV chamber. It showed that metallic aluminum was detected on the surface of sapphire substrates after irradiating for 3 min. with 7keV Ar+ -ions. These results agree with TRIM calculations that yield preferential ion-beam etching. It is concluded that the formation of Au-Al-O compound, which is responsible for the strong metal-ceramic bonding, is due to ion-induced cleaning and reduction of the sapphire surface, and the kinetic energy of depositing gold atoms, molecules, and micro-particles as a driving force for the inter-facial reaction.

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Vertically Well-Aligned ZnO Nanowires on c-$Al_2O_3$ and GaN Substrates by Au Catalyst

  • Park, Hyun-Kyu;Oh, Myung-Hoon;Kim, Sang-Woo;Kim, Gil-Ho;Youn, Doo-Hyeob;Lee, Sun-Young;Kim, Sang-Hyeob;Kim, Ki-Chul;Maeng, Sung-Lyul
    • ETRI Journal
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    • 제28권6호
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    • pp.787-789
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    • 2006
  • In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned, while nanowires normally tilted from the surface when grown on Au-coated c-$Al_2O_3$ substrates. However, pre-growth annealing of the Au thin layer on c-$Al_2O_3$ resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.

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Growth Characteristics of Amorphous Silicon Oxide Nanowires Synthesized via Annealing of Ni/SiO2/Si Substrates

  • Cho, Kwon-Koo;Ha, Jong-Keun;Kim, Ki-Won;Ryu, Kwang-Sun;Kim, Hye-Sung
    • Bulletin of the Korean Chemical Society
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    • 제32권12호
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    • pp.4371-4376
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    • 2011
  • In this work, we investigate the growth behavior of silicon oxide nanowires via a solid-liquid-solid process. Silicon oxide nanowires were synthesized at $1000^{\circ}C$ in an Ar and $H_2$ mixed gas. A pre-oxidized silicon wafer and a nickel film are used as the substrate and catalyst, respectively. We propose two distinctive growth modes for the silicon oxide nanowires that both act as a unique solid-liquid-solid growth process. We named the two growth mechanisms "grounded-growth" and "branched-growth" modes to characterize their unique solid-liquid-solid growth behavior. The two growth modes were classified by the generation site of the nanowires. The grounded-growth mode in which the grown nanowires are generated from the substrate and the branchedgrowth mode where the nanowires are grown from the side of the previously grown nanowires or at the metal catalyst drop attached at the tip of the nanowire stem.

졸-겔 법으로 증착된 ZnO 박막의 냉각 속도 및 후열처리에 따른 특성

  • 김민수;임광국;김소아람;남기웅;이동율;김진수;김종수;임재영
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.246-246
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    • 2011
  • 졸-겔 스핀코팅(sol-gel spin-coating)법을 이용하여 실리콘 기판에 ZnO 박막을 증착하였다. 증착된 졸 용액을 전열처리(pre-heat treatment) 후, 다른 속도로 상온까지 냉각시켰다. ZnO 박막의 특성 분석을 위하여 atomic force microscopy (AFM), X-ray diffraction (XRD), Raman, photoluminescence (PL)을 이용하였다. 전열처리 후 5$^{\circ}C$/min의 속도로 천천히 냉각시킨 ZnO 박막은 산맥구조(mountain chain structure)로 표면이 매우 거친 반면, 빠르게 냉각시킨 ZnO 박막은 매우 매끄러운 표면을 나타내었다. 빠르게 냉각시킨 ZnO 박막의 c-축 배향성(c-axis preferred orientation)이 느리게 냉각시킨 ZnO 박막의 배향성보다 더 우세하게 나타났고, 결정성도 우수하였다. 뿐만 아니라, 빠르게 냉각시킨 ZnO 박막의 광학적 특성이 느리게 냉각시킨 ZnO 박막의 특성보다 우수하게 나타났다. 후열처리(post-heat treatment)에 의해 ZnO 박막의 구조적 및 광학적 특성이 더욱 향상되었다.

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2자유도 PID 제어기를 이용한 AGV의 조향 제어에 관한 연구 (A Study on AGV Steering Control using TDOF PID Controller)

  • 이권순;이영진;손주한;이만형
    • 대한전기학회논문지:시스템및제어부문D
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    • 제49권5호
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    • pp.241-248
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    • 2000
  • Until now, all of the port goods are transported manually by container transporter in the port. Recently there are a lot of studies about unmanned vehicle driven automatically. In terms of the vehicle automation, the control of steering and velocity on vehicle systems is very important part in container transporter. In common sense, vehicle systems have lots of nonlinear parameters so we have many difficulties in designing the optimal controller of them. In this paper, we present a design of the TDOF PID controller using a hybrid schematic algorithm to control the steering system optimally. We used the single-track model to pre-test the designed controller before appling to AGV. We also used the ES(evolutionary strategy) and SA(simulated annealing) algorithms to construct the hybrid tuning algorithm for parameters of controller. Finally, we had the computer simulation to verify that our designed controller has better performance than the other one.

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Effect of Thermal History on Pitting Corrosion of High Nitrogen and Low Molybdenum Stainless Steels

  • Kim, Kwangsik;Chang, Hyunyoung;Kim, Youngsik
    • Corrosion Science and Technology
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    • 제2권2호
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    • pp.75-81
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    • 2003
  • Chromium, molybdenum. and nitrogen are very important alloying elements in stainless steels and its effect was approved in pitting resistance equivalent (PRE) equations and many experimental results. However, Cr can improve the corrosion resistance, but facilitate the formation of sigma phase. Also. Mo has the same effect in stainless steels. If Cr and Mo are added at high amount to increase the corrosion resistance of stainless steel, corrosion resistance in annealed alloys can be improved, but in case of welding or aging heat treatment. its resistance will be drastically decreased. In this work, increasing Cr and N contents but decreasing Mo than the commercial alloys made the experimental alloys. Typical alloys are 25Cr-4.5Mo-0.43N alloy, 27Cr-4.7Mo-0.4N alloy, 27Cr-5.3Mo-0.25N alloy, 32Cr-2.6Mo-0.36N alloy. After annealing and aging heat treatment, microstructures, anodic polarization test, and pitting corrosion test were performed. Annealed alloys showed $100^{\circ}C$ of CPT and aged alloys showed the different tendency depending upon Cr and Mo contents(SFI)

AlAs로 도핑된 ZnO 박막 특성에 대한 연구 (Study on AlAs-doped ZnO Thin Film Properties)

  • 남형진;차경환
    • 한국산학기술학회논문지
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    • 제8권5호
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    • pp.1057-1061
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    • 2007
  • 본 연구에서는 AlAs와 ZnO target을 사용하여 RF magnetron sputtering 시스템에서 layer-by-layer 방법으로 증착한 ZnO 박막의 특성에 대하여 조사하였다. 또한 열처리 전에 $H_2O_2$용액을 사용한 처리가 박막 특성에 미치는 영향도 조사하였다. 연구 결과 열처리 조건에 따라 n-형 또는 p-형 박막이 형성되는 것으로 관찰되었다. 이러한 결과는 박막의 전도 형태를 임의로 수정할 수 있음을 의미하는 동시에 박막 특성의 열적 불안정성을 암시하는 것이기도 하다. 144시간까지 스트레스를 인가한 후 측정한 박막 특성 결과 열처리 과정 중 발생하는 이러한 박막 특성 변화는 열처리 전 박막을 30% $H_2O_2$용액에 1분간 처리함으로써 억제할 수 있는 것으로 관찰되었다.

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Study on compensation of thermal stresses in multilayered materials

  • Han, Jin-Woo;Kim, Jong-Yeon;Kim, Byoung-Yong;Han, Jeong-Min;Moon, Hyun-Chan;Park, Kwang-Bum;Seo, Dae-Shik
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.413-413
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    • 2007
  • In recent years, flexible display devices such as liquid crystal display (LCD), organic light emitting diode (OLED), etc. have attracted considerable interest in a wide variety of applications. Polymer substrate is absolutely necessary to realize this kind of flexible display devices. Using the polymer as a substrate, there are lots of advantages including not only mechanical flexibility such as rolling and bending characteristics but also light weights, low cost and so on. In detail, thickness and weights is only one forth and one second of glass substrate, respectively. However, it needs low temperature below $150^{\circ}C$ in the fabrication process comparing to conventional deposition process. The polymer substrate is not thermally stable as much as the glass substrate so that some deformation can be occurred according to variation of temperature. In particular, performance of devices can be easily deteriorated by shrinkage of substrate when heating it. In this paper, pre-annealing and deposition of buffer layer was introduced and studied to solve previously mentioned problems of the shrinkage and followed shear stress.

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