• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.295-298
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• 1999

AlGaAs/InGaAs power P-HEMTS (Pseudo-morphic High Electron Mobility Transistors) with 1.0-${\mu}{\textrm}{m}$ gate length for PCS applications have been fabricated. We adopted single heterojunction P-HEMT structure with two Si-delta doped layer to obtain higher current density. It exhibits a maximum current density of 512㎃/mm, an extrinsic transconductance of 259mS/mm, and a gate to drain breakdown voltage of 12.0V, respectively. The device exhibits a power density of 657㎽/mm, a maximum power added efficiency of 42.1%, a linear power gain of 9.85㏈ respectively at a drain bias of 6.0V, gate bias of 0.6V and an operation frequency of 1.765㎓.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.4
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• pp.275-280
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• 2006

We propose Doherty power amplifier structure which can be integrated in Silicon RF ICs. Doherty power amplifiers are widely used in RF transmitters, because of their high Power Added Efficiency (PAE) and good linearity. In this paper, it is proposed that a method to replace the quarter wavelength coupler with IQ up-conversion mixers to achieve 90 degree phase shift, which allows on-chip Doherty amplifier. This idea is implemented and manufactured in CMOS 5 GHz band direct-conversion RF transmitter. We measured a 3dB improvement output RF power and linearity.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.326-329
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• 2003

In this paper, we designed and implemented a high power amplifier(HPA) to achieve the high Power Added Efficiency(PAE) over 40% at the 90W output power for the ISM-band(fo=2.45GHz). HPA presented in this paper has 3-stage drive amplifier and 1-stage final amplifier. In the final amplifier, we utilized balanced amplifier configuration with GaAs FET and each of two amplifiers has the push-pull configuration to increase PAE. From the measurement results, we obtained PAE of 42.95% at the 90.57W output power.

• Environmental and Resource Economics Review
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• v.23 no.2
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• pp.349-364
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• 2014

This study analyzed Granger causality between power consumption and production activity in manufacturing sector, by using error correction model. It found that there exists the connection between power consumption and production activity in manufacturing sector. By reflecting the industrial characteristics, it found not only the bilateral causality (power consumption ${\leftrightarrow}$ production activity) in power non-intensive industry, high value-added industry and low value-added industry, but also one-way causality (power consumption ${\rightarrow}$ production activity) in power-intensive industry. These results imply that power demand management policy focusing on efficiency improvement is necessary primarily to minimize negative impacts on production activity, and also stable power supply system is required to meet the increase of power demand.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.3 s.357
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• pp.1-6
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• 2007

A drain bias switching technique is presented to enhance power added efficiency for WiBro and wireless LAN dual band and dual mode transmitter. Some simulations have been done to predict the effect of drain and gate bias change, and bias switching is proposed to get the higher efficiency for dual mode transmitter which generates different output power for different applications. With drain bias switching and simulated optimum fixed gate bias, the amplifier shows dramatic PAE improvement compared to the amplifier without bias switching. The drain and gate bias switching technique will be useful for multi mode communication system with various functions.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.8 s.111
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• pp.707-712
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• 2006

In this paper, dual bias control circuit and PBG(Photonic BandGap) structure have been employed to improve PAE(Power Added Effciency) of the Doherty amplifier on Input power level. The gate and drain bias voltage has been controlled with the envelope of the input RF signal and PBG structure has been employed on the output port of Doherty amplifier. The proposed Doherty amplifier using dual bias controlled circuit and PBG has been improved the average PAE by 8%, $IMD_3$ by -5 dBc. And proposed Doherty amplifier has a high efficiency more than 30% on overall input power level, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.5
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• pp.724-730
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• 2002

Digital communication systems are required to cause the minimum interference to adjacent channels, they must therefore employ the linear power amplifiers. In respect to linear power amplifiers, there are many linearization techniques. Feedforward power amplifier represent very wide bandwidth and high linearization capability. In the feedforward systems, overall efficiency is reduced due to the loss of delay line. In this paper, delay filter instead of transmission delay line adapted to get more high efficiency. Experimental results showed that ACLR (Adjacent Channel Leakage Ratio) has improved 17.43(dB), which is added 3.44(dB) by using the delay filter.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.5
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• pp.372-375
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• 2021

A three-leg inverter-type isolated DC-DC Converter that can use 220 and 440 V grid input voltages is introduced. The secondary circuit structure of the proposed topology is center-tap, which is the same as the conventional phase-shifted full-bridge converter. However, the primary circuit structure is composed of a three-leg inverter structure and a transformer, in which two primary windings are connected in series. The proposed circuit structure has a wider input voltage range than the conventional phase-shifted full-bridge converter, and the circulating-current on the primary-side is reduced. In addition, the voltage stress at the secondary rectifier is greatly improved, and high efficiency can be achieved at a high input voltage by removing the snubber circuit added to the conventional converter. Prototype converters with input DC of 311 V, output of 622 V, and 50 V and 6 kW class specifications were designed and manufactured to verify the validity of the proposed topology; the experimental results are presented.

• Journal of Advanced Navigation Technology
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• v.12 no.3
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• pp.220-226
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• 2008

This paper proposes the Reconfigurable Doherty Amplifier(RDA) with asymmetric structure which has ${\lambda}/4$ impedance transformer for modulating the load impedance in peaking amplifier path. This structure is possible to implement a compact size for N-stage multi Doherty amplifier and to get almost same characteristics that is compared to conventional Doherty amplifier. To realize the high efficiency amplifier, we were implemented 45 Watts power amplifier at transmitter band of Wideband Code Division Multiple Access(WCDMA) base-station. As a result, in case of WCDMA 1 Frequency Allocation(FA) input signals, this amplifier has obtained a 26.3% Power Added Efficiency(PAE) at 8 dB back-off point from P1dB and an Adjacent Channel Leakage Power(ACLR) is -40.4 dBc at center frequency ${\pm}5MHz$ deviation.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.71-78
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• 1994

We have developed GaAs power metal semiconductor field effect transistors (MESFETs) for 4.7V operation under 900 MHz using a low-high deped structures grown by molecular beam epitaxy (MBE). The fabricted MESFETs with a gate widty of 7.5 mm and a gate length of 1.0.mu.m show a saturated drain current (Idss) of 1.7A and an uniform transconductance (Gm) of around 600mS, for gate bias ranged from -2.4 V to 0.5 V. The gate-drain breakdown voltage is measured to be higher than 25 V. The measured rf characteristics of the MESFETs at a frequency of 900 MHz are the output power of 31.4 dBm and the power added efficiency of 63% at a drain bias of 4.7 V.