• Journal of Power Electronics
• /
• 제7권3호
• /
• pp.181-190
• /
• 2007

This paper presents a novel circuit topology of a DC bus line series switch and parallel snubbing capacitor-assisted soft-switching PWM full-bridge inverter type DC-DC power converter with a high frequency planar transformer link, which is newly developed for high performance arc welding machines in industry. The proposed DC-DC power converter circuit is based upon a voltage source-fed H type full-bridge soft-switching PWM inverter with a high frequency transformer. This DC-DC power converter has a single power semiconductor switching device in series with an input DC low side rail and loss less snubbing capacitor in parallel with the inverter bridge legs. All the active power switches in the full-bridge arms and DC bus line can achieve ZCS turn-on and ZVS turn-off transition commutation. Consequently, the total switching power losses occurred at turn-off switching transition of these power semiconductor devices; IGBTs can be reduced even in higher switching frequency bands ranging from 20 kHz to 100 kHz. The switching frequency of this DC-DC power converter using IGBT power modules can be realized at 60 kHz. It is proved experimentally by power loss analysis that the more the switching frequency increases, the more the proposed DC-DC power converter can achieve a higher control response performance and size miniaturization. The practical and inherent effectiveness of the new DC-DC converter topology proposed here is actually confirmed for low voltage and large current DC-DC power supplies (32V, 300A) for TIG arc welding applications in industry.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 하계학술대회 논문집 F
• /
• pp.2069-2071
• /
• 1997

The power semiconductor switching devices(PSSD) continuously developed, Power Electronic Technology using PSSD is gradually extended. The high frequency inverter to generate the large power high frequency subject to power electronic technology pursuit various application. Also, in emboss with environmental destruction problem cause the atmosphere and the water pollution to growth of the commercial society, the research in favor of cleansing environmental a pollutant actively proceed. This paper describe study on the ozone generation power supply using the high frequency electric field method and the lamp type ozone generator using photochemistry, one of method of gene-rate ozone.

• ETRI Journal
• /
• 제34권1호
• /
• pp.134-137
• /
• 2012

Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.

• 전력전자학회논문지
• /
• 제18권2호
• /
• pp.199-204
• /
• 2013

Recently, the demand for fuel efficient electric vehicles (EVs) and hybrid electric vehicles (HEVs) has been growing globally. Due to the increased number of switching devices in the electrified vehicles, the probability of the semiconductor device failure is much higher than in other application areas. A sudden failure in one of the power switches and insufficient power management ability in the systems not only decreases system performance, but also leads to critical safety problems. In this paper, novel switch open circuit fault detection method is proposed, and the proposed approach is verified by experiments.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1989년도 하계종합학술대회 논문집
• /
• pp.522-526
• /
• 1989

Recently developments of high-speed Semi-conductor Switches as Power MOSFETS, Power IGBT, power SIT have enwidened the performance of classical inverter configuration, and also allowed the practical applications of new inverter configuration, with improved performance and wider operating zones. Static power converters are now used in a great variety of applications including induction heating, high-frequency generation, DC/DC power converter, etc.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
• /
• pp.231-234
• /
• 1989

In recent, due to the advanced development of the power semiconductor devices, the Digital Simulation becomes essential in order to investigate the behavior of the system before the manufacturing of the system by using computer for design and analysis of Power Electronic systems. This paper develope the program so-called PECA, which can be applied for the Power Electronic circuits composing of power transistors, thyristers, GTOs and power FET, etc. We consider transistor DC chopper circuit and prove the effectiveness of our program by both the experiment and simulation.

• Journal of Power Electronics
• /
• 제13권1호
• /
• pp.40-50
• /
• 2013

In this paper, a new zero-voltage-switching, high power-factor, bridgeless rectifier is introduced. In this topology, an auxiliary circuit provides soft switching for all of the power semiconductor devices. Thus the switching losses are reduced and the highest efficiency can be achieved. The proposed converter has been analyzed and a design procedure has been introduced. The control circuit for the converter has also been developed. Based on the given approach, a 250 W, 400 Vdc prototype converters has been designed at 100 kHz for universal input voltage (90-264 Vrms) applications. A maximum efficiency of 94.6% and a power factor correction over 0.99 has been achieved. The simulation and experimental results confirm the design procedure and highlight the advantages of the proposed topology.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2007년도 하계학술대회 논문집
• /
• pp.286-288
• /
• 2007

The proposed method offers an improved control method for high power density AC/DC adapter by using more energy efficient electrical equipments. Power factor corrector (PFC) topology is based on boost topology with boundary conduction mode (BCM). DC/DC topology is based on half-bridge topology with newly introduced off-time control method, which helps to reduce size of the semiconductor and the magnetic devices. Test results with 85W AC/DC adapter (18.5V/4.6A) design shows that the measured efficiency is 90% with power density of $36W/in^3$. It also show low no load power consumption of about 0.5W.

• Journal of Power Electronics
• /
• 제11권3호
• /
• pp.375-380
• /
• 2011

A STATic synchronous COMpensator (STATCOM) is a shunt connected voltage source converter (VSC) based FACTS controller using Gate Turn Off (GTO) power semiconductor devices employed for reactive power control. The operation principal is similar to that of a synchronous condenser. A typical application of a STATCOM is voltage regulation at the midpoint of a long transmission line for the enhancement of power transfer capability and/or reactive power control at the load centre. This paper presents the modeling of STATCOM with twenty four pulse three level VSC and Type-1 controller to regulate the reactive current or the bus voltage. The performance is evaluated by transient simulation. It is observed that, the STATCOM shows excellent transient response to step change in the reactive current reference. While the eigenvalue analysis is based on D-Q model, the transient simulation is based on both D-Q and 3 phase models of STATCOM (which considers switching action of VSC).

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.253-253
• /
• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.