• 조명전기설비학회논문지
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• 제26권7호
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• pp.1-8
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• 2012

In this paper, we improved the light extraction efficiency by structural change of LEDs on conventional LEDs. We simulated the LEDs light emission as functions of LED side wall angle, various refractive indices the geometrical structures and analyzed the condition improved the light efficiency. We present the results of experimerns and simulations for light output power from LEDs for various refractive indices and the geometrical structures of the LED encapsulants. When the side wall angle range was from 40[$^{\circ}$] to 30[$^{\circ}$], the LED emission increased. LED side wall angle onto LED using the simulation system with a fine tuning of the structure of the LEDs side wall angle is fabricated. Additionally, we changed the side wall angle of LED package with spherical structure and flat structure. The result of spherical structure ray tracting is higher compared with flat structure about 14[%].

• 마이크로전자및패키징학회지
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• 제21권1호
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• pp.19-23
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• 2014

LED (Light Emitting Diode) 시장의 발전이 빠르게 이루어지고 있음에 따라 점차 고효율 LED의 필요성이 증가하고 있다. 이에 우리는 Hole Type의 Padless 신 구조 수직형 LED에서, 접촉 전극의 크기와 그 배치가 Chip의 가동 전압에 어떠한 영향을 미치는지 알아보았다. 이를 위하여 LED simulation을 통한 계산과 실제 Chip 제작을 통한 전기적 특성 평가를 하였다. 그 결과, Simulation 을 통하여 n전극의 크기가 커질수록 구동전압이 낮아짐을 확인하였고, N 전극의 형태가 확산됨에 따라서도 구동전압이 낮아짐을 확인하였다. 이러한 추세는 실제 제작한 LED Chip의 측정 결과와 비슷한 경향을 나타내었다.

• Journal of the Optical Society of Korea
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• 제16권4호
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• pp.349-353
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• 2012

Uniform spreading of injection current in light-emitting diodes (LEDs) is one of the crucial requirements for better device performances. It is reported that non-uniform current spreading leads to low output power, high current crowding, heating, and reliability degradation of the LED device. This paper reports on the effects of different surface and electrode geometries in the LEDs. To increase the output power of LEDs and reduce the series resistance, a rectangular-type LED (RT-LED) with a centered island cathode has been fabricated and investigated by comparison with a conventional LED (CV-LED). The performances of RT-LEDs were prominently enhanced via uniform current spreading and low current crowding. Performances in terms of increased output power and lower forward voltage of simulated RT-LEDs are much superior to those of CV-LEDs. Based on these results, we investigated the correlation between device geometries and optical characteristics through the fabricated CV and RT-LEDs. The measured output power and forward voltage of the RT-LEDs at 100 mA are 64.7% higher and 8% smaller compared with those of the CV-LEDs.

• 대한화장품학회지
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• 제48권3호
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• pp.245-254
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• 2022

본 연구에서는 655 nm에서 저출력 레이저와 625 ± 5 nm와 850 ± 10 nm에서 파장을 방출하는 LED를 이용한 복합 광선 요법이 탈모 및 두피에 나타나는 효능을 조사하고자 하였다. 이번 연구에는 총 33 명의 시험대상자가 등록되었다. 각 시험대상자는 Low-level laser therapy (LLLT)와 light-emitting diode (LED) 기기를 매일 10 min 씩 12 주간 두피와 모발에 사용했다. LLLT와 LED 기기를 사용한 지 12 주 후, 두피의 붉은기, 탄력, 수분 함량에서 상당한 개선이 있었으며, 모발의 윤기와 인장 강도, 탈락 모발 수가 개선되었다. 시험대상자가 시험 기기를 사용하는 기간 동안 특별한 피부 이상반응에 대한 보고는 없었다. LLLT와 LED를 이용한 복합 광선 요법은 탈모와 두피 상태 개선에 효과적인 요법임이 입증되었다.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2004년도 학술대회 논문집
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• pp.145-150
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• 2004

The LED lighting used spot-light illuminate the limited surface. So it is a key-point to condense wide emission angle of high power light emitting diodes (LEDs) to narrow that angle. In this paper, the secondary optics was designed by lens-makers formula for concentration rays of LED into specific region. So, it simulated the optics that designed by lens makers-formula in the optical design program, LightTools. And then, show the p propriety of lens design utilizing simulation result, luminous intensity, emission angle.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.295-299
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• 2012

We investigated the crystal and the optical properties of GaN-based blue light emitting diodes (LEDs) which were simultaneously grown on c-plane (0001) and semipolar (11-22) GaN templates by using metal-organic chemical vapor deposition (MOCVD). The X-ray rocking curves (XRCs) full width at half maximums (FWHMs) of c-plane (0001) and semipolar (11-22) GaN templates were 275 and 889 arcsec, respectively. In addition, high-resolution X-ray ω-2θ scan showed that satellite peaks of semipolar (11-22) InGaN quantum-wells (QWs) was weaker and broader than that of c-plane (0001) InGaN QWs, indicating that the interface quality of c-plane (0001) QWs was superior to that of semipolar (11-22) QWs. Photoluminescence (PL) and electroluminescence (EL) results showed that the emission intensity and the FWHMs of polar c-plane (0001) LED were much higher and narrower than those of semipolar (11-22) LED, respectively. From these results, we believed that relative poor crystal quality of semipolar (11-22) GaN template might give rise to the poor interfacial quality of QWs, resulting in lower output power than conventional c-plane (0001) GaN-based LEDs.

• 마이크로전자및패키징학회지
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• 제22권4호
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• pp.71-76
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• 2015

최근 Light Emitting Diode (LED)의 효율을 높이기 위한 연구가 활발히 진행 되고 있다. 특히 소자 측면에서는 수평형 LED, 수직형 LED, via-hole 구조의 수직형 LED 등의 다양한 구조가 제시되었다. 본 논문에서는 시뮬레이션을 통해 via-hole 구조의 수직형 LED의 새로운 전극 디자인을 제시하였다. 기존 Via-hole 구조의 수직형 LED의 n-contact hole 주변에 전류가 밀집되는 문제점을 해결하면서 유효 발광면적을 극대화 시켜 소자 전체에 균일한 전류를 주입할 수 있는 소자 디자인에 대해 평가하였다. 시뮬레이션 결과를 바탕으로 최적의 전극 디자인을 실제 디바이스로 제작하여 기존의 via-hole 구조의 수직형 LED와 비교 분석하였다. 최적화된 디자인이 적용된 via hole type 수직형 LED의 경우 기존 디자인에 비해 350 mA 주입시 약 0.2 V의 Forward Voltage 감소하였지만 광 출력은 비슷하여 최종적으로 4.2%의 WPE (Wall plug efficiency)가 향상됨을 보였다.

• 한국기계가공학회지
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• 제11권6호
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• pp.175-182
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• 2012

Light characteristics of the monochromatic red(R), blue(B), green(G) and white(W) and the mixed LED (B-R LED) were investigated by light control a Spectrometer-MMS1 and an illuminometer. The power consumption of each LED was 1W and R LED has five wavelength bands(600nm, 640nm, 660nm, 680nm, 750nm). The light intensity of each LED was changed in a range 10~100%. As a results, the wavelength and the spectrum distribution of R LED increase with increasing light intensity but the wavelength of B, G, W LED decreases. It was found that illumination of each mononochromatic and B-R LED increases linearly with increasing light intensity. It was confirmed that the illumination intensity of R-B light has greater values than those obtained by monochromatic light at the same conditions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.108-108
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• 2012

High-performance GaN-based light emitting diodes (LEDs) with high efficiency and excellent reliability have been of technological importance forapplications in full color display, automotive lighting, and solid state lighting. To realize high-performance and excellent-reliability LEDs, various technologies such as surface texturing, transparent conducting oxide, surface Plasmon, highly p-conduction layer, current blocking layer, photon-enhanced layer, and nanostructures have been extensively investigated. Among them, advanced core technologies based on how to suppress surface leakage and current crowding, how to enhance current injection efficiency and output power, and how to resist electrostatic damage will be displayed and discussed using our reported and preliminary results. New approaches like integrated LEDs will be also introduced and discussed.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1343-1348
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• 2008

LEDs which have many merits are widely used in the field of light devices, and have rapidly replaced old light devices such as incandescent or fluorescent lamps. Long life, on the order of 50,000 to 100,000 hours, is one of the key features of light emitting diodes(LEDs) that has attracted the lighting community to this technology. High Power white LEDs have yet to demonstrate this capability. This paper planed accelerated life test that has two factor(temperature, current) and two levels. Finally, using ALTA programs, we estimated the common shape parameter of Weibull distribution, life-stress relationship, B10 life and accelerating factors.