• Journal of the Optical Society of Korea
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• v.17 no.5
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• pp.376-383
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• 2013

The design of the LEDs lighting in general household illumination was proposed and compared with the fluorescent lighting in this study. Using the LED as a light source would promote energy saving lighting for household illumination purposes. We used the LightTools and DIALux software to design and simulate different standards of illuminance, different correlated color temperatures and different color rendering indices for household environments. The power consumption and efficiency of traditional illuminated light sources and an LED light source with the same standard of illuminance for lighting the household environment were analyzed and compared with each other. Finally, our results show the advantages of using white-light LEDs for lighting and household illumination.

• Korean Journal of Materials Research
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• v.19 no.8
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• pp.417-420
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• 2009

This study develops a highly transparent ohmic contact using phosphorus doped ZnO with current spreading for p-GaN to increase the optical output power of nitride-based light-emitting diodes (LEDs). The phosphorus doped ZnO transparent ohmic contact layer was prepared by radio frequency magnetron sputtering with post-deposition annealing. The transmittance of the phosphorus doped ZnO exceeds 90% in the region of 440 nm to 500 nm. The specific contact resistance of the phosphorus doped ZnO on p-GaN was determined to be $7.82{\times}10^{-3}{\Omega}{\cdot}cm^2$ after annealing at $700^{\circ}C$. GaN LED chips with dimensions of $300\times300{\mu}m$ fabricated with the phosphorus doped ZnO transparent ohmic contact were developed and produced a 2.7 V increase in forward voltage under a nominal forward current of 20 mA compared to GaN LED with Ni/Au Ohmic contact. However, the output power increased by 25% at the injection current of 20 mA compared to GaN LED with the Ni/Au contact scheme.

• Journal of Korea Multimedia Society
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• v.14 no.6
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• pp.752-758
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• 2011

In this paper, we perform a research on a message delivery link based on visible light communication using illumination light-emitting diodes (LEDs) for car-to-car communications and the link transmission success probability is analyzed for the link. The message delivery system is modeled and the signal-to-noise ratio is calculated from the received optical power. Then, the link transmission probability is estimated from the calculated bit error rates (BERs). The message delivery system has optical links from an LED transmitter near the rear lamp of a car ahead to a receiver near the headlamp of a car behind, whose positions are assumed to follow the normal Gaussian distribution. The link transmission success probability is calculated considering the physical characteristics of the optical link. The car positions are generated according to the normal distribution and the bit error rates are calculated for all links. The link transmission success probability is defined. For the unoptimized optical car-to-car message delivery links, it is shown that the link transmission success probability is larger than 0.9 with the transmitted optical power of 400 mW and the semi-angle at half power of 30 degree.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.593-600
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• 2010

In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ${\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.145-145
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• 2011

Light-emitting diodes (LEDs) based on III-nitrides compound semiconductors have achieved a high performance device available for display and illumination sector. However, the conventional c-plane oriented LED structures are still showing several problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. The QCSE results in spatial separation of electron and hole wavefunctions in quantum wells, thereby decreasing the internal quantum efficiency and red-shifting the emission wavelength. Due to demands for improvement of device performance, nonpolar structure has been attracting attentions, since the quantum wells grown on nonpolar templates are free from the QCSE. However, current device performance for nonpolar LEDs is still lower than those for conventional LEDs. In this study, we discuss the potential possibilities of nonpolar LEDs for commercialization. In this study, we characterized current-light output power relation of the a-plane InGaN/GaN LEDs structures with the variation of quantum well structures. On-wafer electroluminescence measurements were performed with short pulse (10 us) and low duty factor (1 %) conditions applied for eliminating thermal effects. The well and barrier widths, and indium compositions in quantum well structures were changed to analyze the efficiency droop phenomenon.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.610-614
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• 2008

In this work, the electrical and optical properties of the two different p-type GaN electrode schemes, ZnNi/ITO and ZnNi/Au, were compared each other, and applied to the top-emitting GaN/InGaN light-emitting diodes (LEDs). The ZnNi/ITO electrode showed much higher transmittance (90%) and slightly lower contact resistance $(1.27{\times}10^{-4}{\Omega}cm^2)$ than those (77%, $(2.26{\times}10^{-4}{\Omega}cm^2)$) of the ZnNi/Au at a wavelength of 460 nm. In addition, GaN LEDs having ZnNi/ITO showed accordingly higher light output power and luminous intensity than those having ZnNI/Au did at the current levels up to 1 A.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.114-121
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• 2015

In conventional LEDs, a mesa-structure is usually used and it causes the current to be overcrowded in a specific region. We propose a novel structure of GaN-based LED to overcome this problem. In order to distribute the current in an active region, a spreading pad is inserted at the p-type region in the GaN based LED device. The inserted spreading pad helps the current flow because it is more conductive than the p-type GaN layer. By performing electrical and optical simulations, the effects of the spreading pad insertion are confirmed. The results of electrical simulation show that the current spreads more uniformly and more radiative recombination is produced as well. Moreover, from the optical simulation, it is revealed that the ITO is less absorptive material than p-GaN if the condition of specific wavelength sources is satisfied. Considering all of the results, we can conclude that the luminescent power is enhanced by the spreading pad.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1038-1042
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• 2003

LED(Light Emitting Diodes)를 이용한 LCD 백라이트는 현재까지 모바일용의 $2{\sim}3$ 인치정도의 소형모델에서 상용화되고있다. 현재 동종분야에서 $5{\sim}7$ 인치 이상의 중대형에서는 아직 검토나 개발단계인 것으로 파악되고 있다. LED의 특징인 장수명, 고색순도, Robustness 등의 장점에도 불구하고 광효율이나 경제적측면에서 아직 형광램프 Type 에 비해 개선점이 남아있는 것도 개발지연 이유중의 하나다. 최근에 일부 광원업체에서 소비전력 5W로 높은 출광효율을 갖는 고휘도를 가진 LED가 개발되고있다. 고색재현성을 요구하는 TV등의 민수용 디스플레이시장이 커지는 현 추세에 한 방법으로 3색의 고휘도 LED광원을 사용한 백 라이트를 개발했다. R(Red), G(Green), B(Blue)의 3색 점광원 다수를 이중도광판 구조의 장변에 일정 간격으로 배열하여 최종 출사면에서 백색이 되도록 소정의 구성비로 설계하였다. 점광원간의 간격으로 인해 발생되는 혼색도를 보완하기위해 광원과 출사면까지의 광경로를 점광원이 아닌 튜브형의 형광광원 사용시보다 일정량 길게 설계해야 되는데, 이것으로 인해 출광효율이 형광램프구조에 비해 떨어지는 결과로 나타났다. 본 연구에서는 17인치 모니터구조의 백라이트에서 색재현성 105%와 소비전력 67W에서 표면휘도 $2000cd/m^2$ 정도를 달성하였다.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.6
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• pp.169-180
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• 2018

White light-emitting diodes (LEDs) are more economical than fluorescent lights, and provide high brightness, a high lifetime expectancy, and greater durability. As LEDs are closely connected with people's daily lives, dimming control of LED is an important component in providing energy savings and improving quality of life. In visible light communications systems using these LEDs, multiple input multiple output (MIMO) technology has attracted a lot of attention, in that it can attain the channel capacity in proportion to the number of antennas. This paper analyzes the power performance of three kinds of modulation in visible light communications (VLC) systems applied space-time block code (STBC) techniques. The modulation schemes are return-to-zero on-off keying (RZ-OOK), variable pulse position modulation (VPPM), and overlapping pulse position modulation (OPPM), and dimming control was applied. The power requirements and power consumption were used as metrics to compare the power efficiency in $2{\times}2$ STBC-VLC environments under the three kinds of modulation. We confirm that dimming control affects the communications performance of each modulation scheme. VPPM showed greater consumption among the three modulations, and OPPM showed energy savings comparable to VPPM.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.384-389
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• 2009

ZnO, a wurtzite lattice structure, has attracted much attention as a promising material for light-emitting diodes (LEDs) due to highly efficient UV emission resulting from its large band gap of 3.37 eV, large exciton binding energy of 60 meV, and low power threshold for optical pumping at room temperature. For the realization of LEDs, both n-type ZnO and p-type ZnO are required. Now, n-type ZnO for practical applications is available; however, p-type ZnO still has many drawbacks. In this study, ZnO films were grown on glass substrates by using atomic layer deposition (ALD) and the ZnO films were irradiated by nitrogen ion beams (20 keV, $10^{13}{\sim}10^{15}ions/cm^2$). The effects of nitrogen-beam irradiation on the ZnO structure as well as the electrical property were investigated by using fieldemission scanning electron microscopy (FESEM) and Hall-effect measurement.