• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.7
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• pp.1-8
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• 2012

In this paper, we improved the light extraction efficiency by structural change of LEDs on conventional LEDs. We simulated the LEDs light emission as functions of LED side wall angle, various refractive indices the geometrical structures and analyzed the condition improved the light efficiency. We present the results of experimerns and simulations for light output power from LEDs for various refractive indices and the geometrical structures of the LED encapsulants. When the side wall angle range was from 40[$^{\circ}$] to 30[$^{\circ}$], the LED emission increased. LED side wall angle onto LED using the simulation system with a fine tuning of the structure of the LEDs side wall angle is fabricated. Additionally, we changed the side wall angle of LED package with spherical structure and flat structure. The result of spherical structure ray tracting is higher compared with flat structure about 14[%].

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.19-23
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• 2014

For the application of light-emitting diodes (LEDs) for general illumination, the development of high power LEDs chips became more essential. For these reasons, recently, modified vertical LEDs have been developed to meet various requirements such as better heat dissipation, higher light extraction and less cost of production. In this research, we investigate the effect of Size and Array of N-GaN contact on operation voltage with new structured padless vertical LED. We changed the size and array of N-electrodes and investigated how they affect the operation voltage of LEDs. We simulated the current crowding and expected operation voltage for different N-contact structures with commercial LED simulator. Also, we fabricated the padless vertical LED chips and measured the electrical property. From the simulation, we could know that the larger size and denser array of n-electrodes could make operation voltage decrease. These results are well in accordance with those measured values of real padless vertical LED chips.

• Journal of the Optical Society of Korea
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• v.16 no.4
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• pp.349-353
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• 2012

Uniform spreading of injection current in light-emitting diodes (LEDs) is one of the crucial requirements for better device performances. It is reported that non-uniform current spreading leads to low output power, high current crowding, heating, and reliability degradation of the LED device. This paper reports on the effects of different surface and electrode geometries in the LEDs. To increase the output power of LEDs and reduce the series resistance, a rectangular-type LED (RT-LED) with a centered island cathode has been fabricated and investigated by comparison with a conventional LED (CV-LED). The performances of RT-LEDs were prominently enhanced via uniform current spreading and low current crowding. Performances in terms of increased output power and lower forward voltage of simulated RT-LEDs are much superior to those of CV-LEDs. Based on these results, we investigated the correlation between device geometries and optical characteristics through the fabricated CV and RT-LEDs. The measured output power and forward voltage of the RT-LEDs at 100 mA are 64.7% higher and 8% smaller compared with those of the CV-LEDs.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.48 no.3
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• pp.245-254
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• 2022

In this study, we tried to investigate the efficacy of combined light therapy using low-power lasers at 655 nm and LEDs emitting wavelengths at 625 ± 5 nm and 850 ± 10 nm in hair loss and scalp. A total of 33 subjects were enrolled in this clinical trial. Each subject used the LLLT and LED device on the scalp for 10 min on a daily basis for 12 weeks. After 12 weeks of LLLT and LED device use, there were significant improvements in redness, elasticity, and hydration of the scalp. Additionally, hair luster and tensile strength were improved. A remarkable decrease in total shed hairs was observed in all subjects at 4, 8, and 12 weeks without any serious adverse event. Combined light therapy using LLLT and LEDs proved to be an effective treatment for reducing hair loss and improving scalp condition.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.11a
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• pp.145-150
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• 2004

The LED lighting used spot-light illuminate the limited surface. So it is a key-point to condense wide emission angle of high power light emitting diodes (LEDs) to narrow that angle. In this paper, the secondary optics was designed by lens-makers formula for concentration rays of LED into specific region. So, it simulated the optics that designed by lens makers-formula in the optical design program, LightTools. And then, show the p propriety of lens design utilizing simulation result, luminous intensity, emission angle.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.295-299
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• 2012

We investigated the crystal and the optical properties of GaN-based blue light emitting diodes (LEDs) which were simultaneously grown on c-plane (0001) and semipolar (11-22) GaN templates by using metal-organic chemical vapor deposition (MOCVD). The X-ray rocking curves (XRCs) full width at half maximums (FWHMs) of c-plane (0001) and semipolar (11-22) GaN templates were 275 and 889 arcsec, respectively. In addition, high-resolution X-ray ω-2θ scan showed that satellite peaks of semipolar (11-22) InGaN quantum-wells (QWs) was weaker and broader than that of c-plane (0001) InGaN QWs, indicating that the interface quality of c-plane (0001) QWs was superior to that of semipolar (11-22) QWs. Photoluminescence (PL) and electroluminescence (EL) results showed that the emission intensity and the FWHMs of polar c-plane (0001) LED were much higher and narrower than those of semipolar (11-22) LED, respectively. From these results, we believed that relative poor crystal quality of semipolar (11-22) GaN template might give rise to the poor interfacial quality of QWs, resulting in lower output power than conventional c-plane (0001) GaN-based LEDs.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.71-76
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• 2015

Recently, light emitting diodes (LEDs) have been studied to improve their efficiencies for the uses in various fields. Particularly in the aspect of chip structure, via hole type vertical LED chip is developed for improvement of light output power, and heat dissipations. However, current vertical type LEDs have still drawback, which is current concentration around the n-contact holes. In this research, to solve this phenomenon, we introduced isolation layer under n-contact electrodes. With this sub-electrode, even though the active area was decreased by about 2.7% compared with conventional via-hole type vertical LED, we could decrease the forward voltage by 0.2 V and wall-plug efficiency was improved approximately 4.2%. This is owing to uniform current flow through the area of n-contact.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.6
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• pp.175-182
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• 2012

Light characteristics of the monochromatic red(R), blue(B), green(G) and white(W) and the mixed LED (B-R LED) were investigated by light control a Spectrometer-MMS1 and an illuminometer. The power consumption of each LED was 1W and R LED has five wavelength bands(600nm, 640nm, 660nm, 680nm, 750nm). The light intensity of each LED was changed in a range 10~100%. As a results, the wavelength and the spectrum distribution of R LED increase with increasing light intensity but the wavelength of B, G, W LED decreases. It was found that illumination of each mononochromatic and B-R LED increases linearly with increasing light intensity. It was confirmed that the illumination intensity of R-B light has greater values than those obtained by monochromatic light at the same conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.108-108
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• 2012

High-performance GaN-based light emitting diodes (LEDs) with high efficiency and excellent reliability have been of technological importance forapplications in full color display, automotive lighting, and solid state lighting. To realize high-performance and excellent-reliability LEDs, various technologies such as surface texturing, transparent conducting oxide, surface Plasmon, highly p-conduction layer, current blocking layer, photon-enhanced layer, and nanostructures have been extensively investigated. Among them, advanced core technologies based on how to suppress surface leakage and current crowding, how to enhance current injection efficiency and output power, and how to resist electrostatic damage will be displayed and discussed using our reported and preliminary results. New approaches like integrated LEDs will be also introduced and discussed.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1343-1348
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• 2008

LEDs which have many merits are widely used in the field of light devices, and have rapidly replaced old light devices such as incandescent or fluorescent lamps. Long life, on the order of 50,000 to 100,000 hours, is one of the key features of light emitting diodes(LEDs) that has attracted the lighting community to this technology. High Power white LEDs have yet to demonstrate this capability. This paper planed accelerated life test that has two factor(temperature, current) and two levels. Finally, using ALTA programs, we estimated the common shape parameter of Weibull distribution, life-stress relationship, B10 life and accelerating factors.