• Journal of Power Electronics
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• v.19 no.6
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• pp.1591-1600
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• 2019

In this paper, a practical SPICE model for an IGBT and a PiN diode is proposed based on the Finite Differential Method (FDM). Other than the conventional Fourier model and the Hefner model, the excess carrier distribution can be accurately solved by a fast FDM in the SPICE simulation tool. In order to improve the accuracy of the SPICE model, the Taguchi method is adopted to calibrate the extracted parameters. This paper presents a numerical modelling approach of an IGBT and a PIN diode, which are also verified by SPICE simulations and experiments.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.448-451
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• 1999

This paper describes controller development for a dynamic voltage compensator using a shunt diode converter and series inverter. The control system was designed using 1/4 period integrator and vector relationship between the supply voltage and load voltage. A simulation model and scaled hardware model were developed for analyzing performance of the controller and the whole system. Both results confirm that the dynamic compensator can restore the load voltage under the fault of the distribution system.

• 한국연소학회:학술대회논문집
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• 2003.05a
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• pp.75-83
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• 2003

Diode laser absorption system is advantageous of their non-invasive nature, fast response time, high sensitivity and real-time measurement capability. Furthermore, recent advances in room-temperature, near-IR and visible diode laser sources for telecommunication, optical data storage applications are enabling combustion diagnostics system based on diode laser absorption spectroscopy. So, combined with fiber-optics and high sensitive detection strategies, compact and portable sensor system are now appearing for a variety of applications. The objective of this research is to take advantage of distributed feed-back diode laser and develope new gas sensing system. It experimentally found out that the wavelength, power characteristics as a function of injection current and temperature. In addition to direct absorption and wavelength modulation spectroscopy have been demonstrated in these experiments and have a bright prospect to this diode laser system.

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.369-374
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• 2004

In this paper, we propose a new tunable laser diode structure. The laser diode consists of a sampled-grating distributed feedback laser diode monolithically integrated with a sampled-grating distributed-Brags-Reflector. For a specific design, the possibility of continuous/discrete wavelength tuning over 27nm is confirmed by a numerical analysis using a split-step time domain model. Because the laser diode can be directly coupled with optical fiber without the intervention of the passive section, the laser diode exhibits higher output power than the conventional laser diode.

• Journal of Power Electronics
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• v.13 no.4
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• pp.584-591
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• 2013

In this paper, a hybrid booster power module with Si IGBT and Silicon Carbide (SiC) Schottky Barrier Diode (SBDs) is presented. The switching characteristics of the hybrid booster module are compared with commercial Silicon IGBT/Si PIN diode based modules. We applied the booster power module into a non-isolated on board vehicle charger with a simple buck-booster topology. The performances of the on-vehicle charger are analyzed and measured with different power modules. The test data is measured in the same system, at the same points of operation, using the conventional Si and hybrid Si/SiC power modules. The measured power conversion efficiency of the proposed on-vehicle charger is 96.4 % with the SiC SBD based hybrid booster module. The conversion efficiency gain of 1.4 % is realizable by replacing the Si-based booster module with the Si IGBT/SiC SBD hybrid boost module in the 6.6 kW on-vehicle chargers.

• Journal of Power Electronics
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• v.14 no.2
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• pp.271-281
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• 2014

Fluctuating wind conditions necessitate the use of a variable speed wind turbine (VSWT) with a AC/DC/AC converter scheme in order to harvest the maximum power from the wind and to decouple the synchronous generator voltage and frequency from the grid voltage and frequency. In this paper, a combination of a three phase diode bridge rectifier (DBR) and a modified topology of the diode clamped multilevel inverter (DCMLI) has been considered as an AC/DC/AC converter. A control strategy has been proposed for the DCMLI to achieve the objective of grid interface of a wind power system together with local load compensation. A novel fixed frequency current control method is proposed for the DCMLI based on the level shifted multi carrier PWM for achieving the required control objectives with equal and uniform switching frequency operation for better control and thermal management with the modified DCMLI. The condition of the controller gain is derived to ensure the operation of the DCMLI at the fixed frequency of the carrier. The converter current injected into the distribution grid is controlled in accordance with the wind power availability. In addition, load compensation is performed as an added facility in order to free the source currents being fed from the grid of harmonic distortion, unbalance and a low power factor even though the load may be unbalanced, non-linear and of a poor power factor. The results are validated using PSCAD/EMTDC simulation studies.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.5
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• pp.423-432
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• 1999

This paper proposes a 12­pulse diode rectifier system with low kVA components suitable for powering switch mode power supplies or ac/dc converter applications. The proposed 12-pulse system employs a polyphase transformer, a zero sequence blocking transformer (ZSBT) in the dc link, and an interphase transformer. Results produce near equal leakage inductance in series with each diode rectifier bridge ensuring equal current sharing and performance improvements, The utility input currents and the voltage across the ZSBT are analyzed the kVA rating of each component in the proposed system is computed. The 5th , 7th , 17th and 19th harmonics are eliminated in the input line currents resulting in clean input power. The dc link voltage magnitude generated by the proposed rectifier system is nearly identical to a conventional to a conventional 6-pulse system. The proposed system is suitable to retrofit applications as well as in new PWM drive systems. Simulation and experimental results from a 208V , 10kVA system are shown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1096-1099
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• 2001

The basic design structure of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) is firstly given in this paper. The bulk of wafer is punch-through (PT) type with high resistivity and narrow N-base width. The photo-mask was designed upon the turn-off characteristics of GCT and solution of separation between GCT and diode part. The center part of Si wafer is free-wheeling diode (FWD) and outer is GCT part which has 240 fingers totally. The switching performance of GCT was investigated by Dessis of ISE. The basic manufacture process of 2500V-4500V RC-GCTs was given in this work. Additionally, the local carrier lifetime control by 5Mev proton irradiation was adopted so as to not only to have the softness of reverse recovering for FWD but for reduction of turn-off losses of GCT as well.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.363-365
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• 2006

소비자의 요구와 기술력의 발달로 PDP시장은 42인치와 60인치등 대형PDP가 주류를 이루고 있으며 대형화에 따라서 PDP전원의 소모전력 또한 $400W{\sim}600W$ 까지 증가 하고 있다. 기존 소용량 PDP전원으로 사용되던 Flyback의 경우 소모 전력이 증가함에 따라 대형PDP에 적용하기에는 소자 내압 및 시스템 효율 측면에서 다소 무리가 있다. 따라서 대형PDP의 전원을 위해서 새로운 2 Switch 3 Diode를 채용한 고효율 DCR (Diode Clamping Rectifier) Flyback Converter를 제안하였으며 이를 42인치 PDP에 적용하여 회로의 타당성 및 우수성을 검증하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.81-85
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• 2009

We has been analysed optical properties of OLED(organic light emitting diode) and characteristics of ITO(Indium Tin Oxide) in terms of $O_2$ plasma treatment for manufacturing high efficiency OLED, RF power of $O_2$ plasma was changed 25, 50, 100, 200 W. $O_2$ gas flow, gas pressure and treatment time were fixed. Sheet resistance and surface roughness of ITO were measured by Hall-effect measurement system and AFM, respectively. The ranges of sheet resistance and surface roughness were $5.5{\sim}6,06\;{\Omega}$ and $2.438{\sim}3.506\;nm$ changing of RF power, respectively, PM(Passive Matrix)OLED was fabricated with the structure of ITO(plasm treatment)/TPD($400\;{\AA}$)/$Alq_3(600\;{\AA})$/LiF($5\;{\AA}$)/Al($1200\;{\AA}$). Turn-on voltage of PMOLED was 7 V and luminance was $7,371\;cd/m^2$ at the RF power of 25 W, $O_2$ plasma treatment of ITO surface was result in lowering the operating voltage and improving luminance of PMOLED.