• Journal of Power Electronics
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• 제16권5호
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• pp.1689-1697
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• 2016

Continuous conduction mode (CCM) boost converters are commonly used in home appliances and various industries because of their simple topology and low input current ripples. However, these converters suffer from several disadvantages, such as hard switching of the active switch and reverse recovery problems of the output diode. These disadvantages increase voltage stresses across the switch and output diode and thus contribute to switching losses and electromagnetic interference. A new topology is presented in this work to improve the switching characteristics of CCM boost converters. Zero-current turn-on and zero-voltage turn-off are achieved for the active switches. The reverse-recovery current is reduced by soft turning-off the output diode. In addition, an input current sensorless control is applied to the proposed topology by pre-calculating the duty cycles of the active switches. Power factor correction is thus achieved with less effort than that required in the traditional method. Simulation and experimental results verify the soft-switching characteristics of the proposed topology and the effectiveness of the proposed input current sensorless control.

• 한국광학회지
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• 제18권3호
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• pp.208-215
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• 2007

광섬유 연결 반도체레이저 여기 세라믹 Nd:YAG 레이저의 열렌즈를 보상하기 위한 공진기를 구성하였다. 초점거리 30 mm, 유효직경 22 mm인 보상렌즈를 레이저 매질의 단면으로부터 25 mm 떨어진 곳에 위치시켜 열렌즈 효과를 보상하였다. 보상렌즈가 없는 경우 레이저 출력은 열렌즈 효과에 의해 여기파워 6 W 이상에서 급격히 감소하기 시작하였으며, 12 W에 이르러서는 레이저가 거의 발진되지 않았다. 열렌즈 효과가 보상되었을 경우 레이저 출력은 선형적으로 증가하였으며, 여기파워 12 W에서 $M^{2}$값은 2.4로 좋은 빔질을 나타내었다.

• Journal of Electrical Engineering and Technology
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• 제13권1호
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• pp.387-392
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• 2018

Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.

• 전기학회논문지
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• 제65권11호
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• pp.1919-1924
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• 2016

In general, Diode rectifier has been applied to DC traction power supply system. Diode has some characteristics which is voltage drop in inverse proportion of load because of non-controlled switch, and cannot flow a current in reverse bias. So, voltage drop occurs frequently, and regenerated power cannot use in substation. The PWM rectifier is able to control output voltage constantly to reduce voltage drop and to use regeneration power without additional inverter. This paper proposes analysis algorithm for DC traction power supply system with PWM rectifier.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2005년도 ICCAS
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• pp.179-185
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• 2005

This paper presents a novel circuit topology of a high efficiency single-phase power conditioner. This power conditioner is composed of time-sharing sinewave absolute pulse width modulated boost chopper with a bypass diode in the first power processing stage and time-sharing sinewave pulse width modulated full-bridge inverter in the second power processing stage operated by time-sharing dual mode pulse pattern control scheme. The unique operating principle of the two power processing stage with time-sharing dual mode sinewave modulation scheme is described with a design example. This paper proposes also a sinewave tracking voltage controlled soft switching PWM boost chopper with a passive auxiliary edge-resonant snubber. The new conceptual operating principle of this novel power conditioner related to new energy utilization system is presented and discussed through the experimental results.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 F
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• pp.2568-2571
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• 1999

Recently, new trend in telecommunication device is to apply low voltage, about 3.3V-1.5V. However, it is undesirable in view of high efficiency and power desity which is the most important requirement in the distributed power system. Rectification loss in the output stage in on-board converter for distributed power system are constrained to obtain high efficience at low output voltage power suppies. This paper is investigated conduction power loss in synchronouss rectifier with a parallel -connected Schottky Barrier Diode(SBD). Conduction losses are calculated for both MOSFET and SBD respectively. The SBD conduction power loss dissipates more than the MOSFET rectifier conduction power loss.

• 한국산업융합학회 논문집
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• 제24권4_1호
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• pp.411-419
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• 2021

In this study, IGBT_Total_Loss and DIODE_Total_Loss were used to analyze the slope of the junction temperature for each section for temperature and duty variables in order to simply calculate the junction temperature of the power semiconductor (IGBT). As a result of the calculation, IGBT_Max_Junction_Temp and DIODE_Max_Junction_Temp form a proportional relationship with temperature for each duty. This simulation data shows that the power loss of a power semiconductor is calculated in a complex manner according to the current dependence index, voltage dependence index, and temperature coefficient. By applying the slope for each condition and section, the junction temperature of the power semiconductor can be calculated simply.

• 한국연소학회지
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• 제9권3호
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• pp.27-35
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• 2004

Diode laser absorption sensors are advantageous because they may provide fast, sensitive, absolute, and selective measurements of species concentration. These systems are very attractive for practical applications owing to its compactness, resonable cost, robustness, and ease of use. In addition, diode lasers are fiber-optic compatible and thus enable simultaneous measurements of multiple species along a line-of-sight. Recent advances of room-temperature, near-IR and visible diode laser sources for telecommunication, optical data storage applications make it possible to be applied for combustion diagnostics based on diode laser absorption spectroscopy. Therefore, combined with fiber-optics and high sensitive detection strategies, compact and portable sensor systems are now appearing for variety of applications. The objectives of this research are to develope a new gas sensing system and to verify feasibility of this system. Wavelength and power characteristics as a function of injection current and temperature are experimentally found out. Direct absorption spectroscopy has been demonstrated in these experiments and has a bright prospect to this diode laser system.

• 한국전자파학회논문지
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• 제18권4호
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• pp.364-371
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• 2007

본 논문에서는 와이브로 기지국 시스템을 위한 고전력 PIN 다이오드 스위치와 고속 스위치 구동회로에 대한 설계와 측정 결과를 제공한다. 일반적인 전력용 팩키지 다이오드의 기생 인덕턴스에 의한 격리도 열화를 막고 다이오드 스위치의 전력 능력을 향상시키기 위해 칩 형태의 다이오드를 사용하였으며, 본딩 와이어에 의한 직렬 인덕턴스는 전송선로의 임피던스에 쉽게 흡수될 수 있도록 회로를 구성하였다. 구현된 스위치 모듈은 사용된 다이오드의 개수를 최대한 줄이면서 최대의 성능을 얻을 수 있도록 설계되었으며 2.35 GHz에서 써큘레이터의 손실을 포함하여 약 0.84 dB의 삽입 손실과 80 dB 이상의 격리도 특성을 보였다. 또한 TTL 신호를 통한 스위치 모듈의 제어를 위해 스위치 구동회로를 설계, 제작하였으며 스위칭 속도는 200 nsec로 측정되었다. 스위치 모듈은 디지털 변조된 고전력 신호에 의해 전력능력이 시험되었으며 70 W의 전력이 인가되는 경우에도 정상적으로 동작하는 특성을 보여주었다.

• 한국전자통신학회논문지
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• 제17권5호
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• pp.853-858
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• 2022

본 논문에서는 레이저 다이오드를 활용하여 수중 광 전력과 수중 광 무선통신의 동시전송을 연구하고 이에 대한 실험 결과를 보인다. 본 실험에서는 송신부에 전/광 변환을 위한 레이저 다이오드를 사용하고 수신부에는 광/전 변환을 위한 태양전지를 사용하였다. 수중 전송 실험을 위해서는 플라스틱 관에 물을 채워 구현하였으며, 수중 광 무선통신 및 수중 광 무선충전을 위해 레이저 송신단과 수신단 시스템을 최적화하였다. 본 실험에서는 100 mW 급 레이저를 사용하였으며, 레이저의 최대 전/광 변환효율을 18.5 % 였다. 수중 광 무선충전 및 수중 광 무선통신의 동시전송 실험결과, 수중에서 최대 5 m 전송시에 0.33 %의 DC-to-DC 전송효율을 보였으며, 수중 무선 광통신은 수중에서 1 m 전송시에 최대 50 kbps의 전송속도를 보였다.