• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.55-55
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Journal of IKEEE
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• v.22 no.1
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• pp.180-184
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• 2018

Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Journal of Korean Society of Transportation
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• v.22 no.5
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• pp.75-87
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• 2004

Along the seashore regions in Korea, though strong winds with very large strength are frequently witnessed, no system which can provide appropriate speed information for driving vehicle has been introduced. The driving against strong winds could be very dangerous because of the high possibility of accidents such as rollover and collision. These accidents usually resulted from driver's forced driving try even in difficult situation for steering vehicle, and sometimes overspeed without consideration of wind impact to the vehicles. To reduce accident caused by strong winds, it is important to inform drivers of appropriate driving speeds by perceiving strong winds. By setting up WIS at the main points where strong winds frequently appear and using the variable message sign(VMS) connected to the on-line whether information system, it tis possible to provide desired speed information, which can maintain vehicles' tractive force and maximum running resistance. The case study is conducted on the case of Mokpo-Big-Bridge, which is under construction at Mokpo city. The result show that in case the annual average direction of wind is South and the wind speed is over 8m/hr, the desired speed, which is required in order for vehicles running to South direction to maintain the marginal driving power, is 60km/hr. In addition, for the case of a typhoon such as Memi generated in 2003 year, if wind speed had been 18m/sec in Mokpo city at that time, the running resistance at the speed of 40km/hr is calculated as 1131N. This resistance can not be overcome at the 4th gear(1054N) level, therefore, the gear of vehicles should be reduced down to the 3rd level. In this case, the appropriate speed is 40km/h, and at this point the biggest difference between running resistance and tractive force is generated.

• Journal of Energy Engineering
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• v.11 no.1
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• pp.1-9
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• 2002

The purpose of this study is to maintain high efficiency and reasonable use of cool thermal storage systems operated in the domestic building sector. As the result of efficiency test from the five types of operated cool storage systems on the condition that COP ranges are 2.6 to 3.4 during the day time and 2.1 to 3.0 during the night time and it decreased by more than 30% of rated COP given 3.8 to 3.0. The Analysis of cool storage rate shows that only 3 (21.4%) systems out of 15 buildings hold to over 40% capacity for its total capacity. To prevent the decrease in operating efficiency, it should correct the malfunction of 3-way valve and expansion valve and the mistake of control values for schedule program and increase cooling tower capacity. In order to improve piping line, it needs bypass brine line off refrigerator, separation of chilled water line with Ice Slurry system at day and night time and speed control of chilled and warm water pumps. This study does require the more studies on improving difficulty of increasing cooling load with Ice on Coil system, waterproofing with Ice Ball system, COP drop during the night time with Ice Lens, low operating temperature during the day time with Ice Slurry and increasing of Power loss due to hot gas de-icing with Ice Harvest in the future.

• The Journal of Fisheries Business Administration
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• v.39 no.1
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• pp.87-114
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• 2008

The cultured tuna production which has suddenly expanded at the short time and the demand for it attract attention. Farming mode, distribution transactions, change of the market (domestic and international) and the price trend are reviewed from the Japan's position which is the biggest consuming country. This paper tries to describe the current status of the food system related to the cultured tuna. Japanese government began the development of the tuna culture technology in 1970. It was by the Fisheries Agency's project. Kinki University which is the large scale private university in Japan participated in the project. After that, 32 years have passed. Kinki University established the full farming of the bluefin tuna in August, 2002. On the other hand, in 1974, one Japanese private enterprise began its tuna farming business in Canada. Kinki University gave this company technical cooperation. Also, in the early stages of the 90s, as for the policy of the overseas fishery cooperation foundation, it supported the tuna farming business in Australia. It is very clear to understand that the long-term technological-development has supported the take-off scene of the tuna culture business not only in foreign countries but also in Japan. The total shipment scale of the cultured tuna expanded very much within about 10 recent years. However, the decrease of the wild tuna catch, the reinforcement of the fisheries regulation and the tuna body to dwarf are remarkable now. Under the condition as the mentioned above, Japan's tuna consumption, especially, in the market at the fatty meat of tuna of the cultured tuna is building up firm status. At present, the Mediterranean Sea coastal countries, Australia, Mexico and Japan have the tuna farming sites. Australia farms the southern bluefin tuna. The others do the bluefin tuna. About for 3 years, Japan farms the juvenile of the tuna. The global production areas are as follows. 8 coastal countries of the Mediterranean Sea; 18,000 tons (61 % of the cultured tuna quantity in foreign countries), Mexico; 4,500 ton (15%), Australia; 7,000 tons (24%). In 2003, Japan has 32 managements and 39 offices for tuna farming. In Japan, Kyushu and Okinawa district, the share shows itself as 80 % of the domestic production quantity. Especially, the share of Amami-oshima Island in Kagoshima Prefecture exceeds 60 %. Therefore, this island has the maximum production scale of Japan. The amount of supply of BT and SBT was 56,000 tons in 2004. In Abroad, the tuna farming business forms a fixed connection between the importer and the wholesaler which have their office in Japan. In the field of the capital composition, the payment in advance, transaction and the way of settlement, each maintains their fixed relation. The market conditions of the cultured tuna are supported by "the decline of price level" and "the expansion of the general public consumption segment". These lead a team merchandising, and it is supported by the fixed business connection of each. This makes the profit of each business which are on the cultured tuna distribution. However, they have competition on the power balance among them.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.993-994
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• 2008

Electrochromic (EC) devices are capable of reversibly changing their optical properties upon charge injection and extraction induced by the external voltage. The characteristics of the EC device, such as low power consumption, high coloration efficiency, and memory effects under open circuit status, make them suitable for use in a variety of applications including smart windows and electronic papers. Coloration due to reduction or oxidation of redox chromophores can be used for EC devices (e-paper), but the switching time is slow (second level). Recently, with increasing demand for the low cost, lightweight flat panel display with paper-like readability (electronic paper), an EC display technology based on dye-modified $TiO_2$ nanoparticle electrode was developed. A well known organic dye molecule, viologen, was adsorbed on the surface of a mesoporous $TiO_2$ nanoparticle film to form the EC electrode. On the other hand, ZnO is a wide bandgap II-VI semiconductor which has been applied in many fields such as UV lasers, field effect transistors and transparent conductors. The bandgap of the bulk ZnO is about 3.37 eV, which is close to that of the $TiO_2$ (3.4 eV). As a traditional transparent conductor, ZnO has excellent electron transport properties, even in ZnO nanoparticle films. In the past few years, one-dimension (1D) nanostructures of ZnO have attracted extensive research interest. In particular, 1D ZnO nanowires renders much better electron transportation capability by providing a direct conduction path for electron transport and greatly reducing the number of grain boundaries. These unique advantages make ZnO nanowires a promising matrix electrode for EC dye molecule loading. ZnO nanowires grow vertically from the substrate and form a dense array (Fig. 1). The ZnO nanowires show regular hexagonal cross section and the average diameter of the ZnO nanowires is about 100 nm. The cross-section image of the ZnO nanowires array (Fig. 1) indicates that the length of the ZnO nanowires is about $6\;{\mu}m$. From one on/off cycle of the ZnO EC cell (Fig. 2). We can see that, the switching time of a ZnO nanowire electrode EC cell with an active area of $1\;{\times}\;1\;cm^2$ is 170 ms and 142 ms for coloration and bleaching, respectively. The coloration and bleaching time is faster compared to the $TiO_2$ mesoporous EC devices with both coloration and bleaching time of about 250 ms for a device with an active area of $2.5\;cm^2$. With further optimization, it is possible that the response time can reach ten(s) of millisecond, i.e. capable of displaying video. Fig. 3 shows a prototype with two different transmittance states. It can be seen that good contrast was obtained. The retention was at least a few hours for these prototypes. Being an oxide, ZnO is oxidation resistant, i.e. it is more durable for field emission cathode. ZnO nanotetropods were also applied to realize the first prototype triode field emission device, making use of scattered surface-conduction electrons for field emission (Fig. 4). The device has a high efficiency (field emitted electron to total electron ratio) of about 60%. With this high efficiency, we were able to fabricate some prototype displays (Fig. 5 showing some alphanumerical symbols). ZnO tetrapods have four legs, which guarantees that there is one leg always pointing upward, even using screen printing method to fabricate the cathode.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.4
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• pp.491-498
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• 2012

Recently, many papers have been proposed in order to improve the OFDM system performance in T-DMB DOCR (Digital On Channel Repeater), by using removing the feedback signal so that the transmitter power can be increased or by using the equalizer to remove ICI. Despite these efforts, however, signal quality at the receiving terminal has not been improved because of constellation smearing in T-DMB DOCR. In this paper, in order to suppress constellation smearing, we propose an effective equalizer algorithm that can improve system performance. We perform adaptive channel estimation and non-coherent decision directed noise cancellation method that can estimate the channel subsequently during data symbols period in the frequency domain. So we can obtain better quality of the signal at the receiving terminal. In order to secure QoS(Quality of Service) required in T-DMB handsets, we evaluate SNR and BER in T-DMB DOCR(Digital On Channel Repeater) and verified by simulation. In this simulation results, this system is satisfied the performance of BER=$10^{-5}$ at less than SNR=14 dB at the receiver after compensation of phase noise -18 dBc.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.298-298
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• 2013

Finding renewable and clean energy resources is essential research to solve global warming and depletion of fossil fuels in modern society. Recently, complex harvesting of energy from multiple sources is available in our living environments using a single device has become highly desirable, representing a new trend in energy technologies. We report that when simultaneously driving the fusion and composite cells of two or more types, it is possible to make an affect the other cells to obtain a greater synergistic effect. To understand the coupling effect of photovoltaic and piezoelectric device, we fabricate the serially integrated hybrid cell (s-HC) based on organic solar cell (OSC) and piezoelectric nanogenerator (PNG). The size of increased voltage peaks when OSC and PNG are working on is larger than the case when only PNG is working. This voltage difference is the Voc change of OSC, not the voltage change of PNG and current density difference between these two cases is manifested more clearly. When the OSC and PNG are working in s-HC at the same time, piezoelectric potential (VPNG) is generated in ZnO and theoretical total voltage is sum of voltage of an OSC (VOSC) and VPNG. However, electrons from OSC are influenced by piezoelectric potential in ZnO and current loss of OSC in whole circuit decreases. As a result, VOSC increases temporarily. Current shows the similar behavior. PNG acts a resistance in the whole circuit and current loss occurs when the electrons from OSC pass through the PNG. But piezoelectric potential recover current loss and decrease the resistance of PNG. Our PNG can maintain piezoelectric potential when the strain is held owing to the LDH layer while general PNG cannot maintain piezoelectric potential. During the section that strain is held, voltage enhancement effect is maintained and same effect appeared even turn off the light. Actually at this time, electrons in ZnO nanosheets move to LDH and trapped by the positive charges in this layer. After this strain is held, piezoelectric potential of ZnO nanosheets is disappeared but potential difference which is developed by negative charge dominant LDH layer is remained. This potential acts similar role like piezoelectric potential in ZnO. Electrons from the OSC also are influenced by this potential and the more current flows.