• 제목/요약/키워드: Power Mask

검색결과 219건 처리시간 0.026초

Analysis of Amorphous Carbon Hard Mask and Trench Etching Using Hybrid Coupled Plasma Source

  • Park, Kun-Joo;Lee, Kwang-Min;Kim, Min-Sik;Kim, Kee-Hyun;Lee, Weon-Mook
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.74-74
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    • 2009
  • The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

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LIGA 공정에서의 노광시간과 X선마스크 흡광체의 두께 (Exposure Time and X-Ray Absorber thickness in the LIGA Process)

  • 길계환;이승섭;염영일
    • 한국진공학회지
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    • 제8권2호
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    • pp.102-110
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    • 1999
  • The LIGA X-ray exposure step was modelled into three inequalities, by assuming that the X-ray energy attenuated within a resist is deposited only in the localized range of the resist. From these inequalities, equations for the minimum and maximum exposure times required for a good quality microstructure were obtained. Also, an equation for the thickness of an X-ray mask absorber was obtained from the exposure requirement of threshold dose deposition. The calculation method of the synchrotron radiation power from a synchrotron radiation source was introduced and applied to an X-ray exposure step. A power from a synchrotron radiation source was introduced and applied to an X-ray exposure step/ A power function of photon energy, approximating the attenuation length of the representative LIGA resist, PMMA, and the mean photon energy of the XZ-rays incident upon an X-ray mask absorber were applied to the above mentioned equations. Consequently, the tendencies of the minimum and maximum exposure and with respect to mean photon energy and thick ness of PMMA was obtained. Additionally, the tendencies of the necessary thickness of PMMA and photon energy of the X-ray mask absorber with respect to thickness of PMMA and photon energy of the X-rays incident upon an X-ray mask absorber were examined. The minimum exposure time increases monotonically with increasing mean photon energy for the same total power density and is not a function of the thickness of resist. The minimum exposure time increases with increasing mean photon energy for the same total power density in the case of the general LIGA process, where the thickness of PMMA is thinner than the attenuation length of PMMA. Additionally, the minimum exposure time increases monotonically with increasing thickness of PMMA. The maximally exposable thickness of resist is proportional to the attenuation length of the resist at the mean photon energy with its proportional constant of ln $(Dd_m/D_{dv})$. The necessary thickness of a gold X-ray mask absorber due to absorption edges of gold, increases smoothly with increasing PMMA thickness ratio, and is independent of the total power density itself. The simplicity of the derived equations has made clearly understandable the X-ray exposure phenomenon and the correlation among the exposure times, the attenuation coefficient and the thickness of an X-ray mask absorber, the attenuation coefficient and the thickness of the resist, and the synchrotron radiation power density.

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A Spoofing Detection Scheme Based on Elevation Masked-Relative Received Power in GPS Receivers using Multi-band Array Antenna

  • Junwoo Jung;Hyunhee Won;Sungyeol Park;Haengik Kang;Seungbok Kwon;Byeongjin Yu;Seungwoo Seo
    • Journal of Positioning, Navigation, and Timing
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    • 제12권2호
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    • pp.101-111
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    • 2023
  • Many spoofing detection studies have been conducted to cope with the most difficult types of deception among various disturbances of GPS, such as jamming, spoofing, and meaconing. In this paper, we propose a spoofing detection scheme based on elevation masked-relative received power between GPS L1 and L2 signals in a system using a multi-band array antenna. The proposed scheme focuses on enabling spoofing to be normally detected and minimizes the possibility of false detection in an environment where false alarms may occur due to pattern distortion among elements of an array antenna. The pattern distortion weakens the GPS signal strength at low elevation. It becomes confusing to detect a spoofing signal based on the relative power difference between GPS L1 and L2, especially when GPS L2 has weak signal strength. We propose design parameters for the relative power threshold including beamforming gain, the minimum received power difference between L1 and L2, and the patch antenna gain difference between L1 and L2. In addition, in order to eliminate the weak signal strength of GPS L2 in the spoofing detection process, we propose a rotation matrix that sets the elevation mask based on platform coordinates. Array antennas generally do not have high usefulness in commercial areas where receivers are operated alone, but are considered essential in military areas where GPS receivers are used together with signal processing for beamforming in the direction of GPS satellites. Through laboratory and live sky tests using the device under test, the proposed scheme with an elevation mask detects spoofing signals well and reduces the probability of false detection relative to that without the elevation mask.

보호용 기능성 마스크를 응용한 패션 마스크 분석 (An Analysis on the Application of Functional Mask for Protection in Fashion Mask)

  • 최정화
    • 한국의류산업학회지
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    • 제15권6호
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    • pp.851-861
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    • 2013
  • This study analyzed the fashionable characteristics of functional fashion mask types. This study reviewed the literature on masks and analyzed fashion photos found in fashion books, fashion collections and on internet fashion sites. The results were categorized into four characteristics. Integration of structure and function showed mask designs that connected to the hood and portable items. It represented the reflection of nomadic life, liberation, obscurity and the consciousness of discomfort. Signs of playfulness showed mask hybrids and animal images, the mask hybrids and humanoid images, the printing of animal characters, body parts and unusual material hybrids. It represented the liberation from a fixed identity, the loss of seriousness, the reduction of tension and the pursuit of pleasure and freedom. The duplicity of aggression and protection showed a futuristic or aggressive helmet facemask, an enclosed mask of intensive color, and the morphological hybrid of a disgusting or aggressive motif. It represented the end of human weakness, the desire of new self-expression and the longing of superhuman power. Fanciful decoration showed masks with glittery decoration, sunglasses with luxury decoration material, a medical facemask made of lace material and fanciful printing. It showed one facet of extreme consumption, the creation of new personality and value, the pursuit of high quality and a mutual coexistence of status and anonymity.

Analysis of Laser-protection Performance of Asymmetric-phase-mask Wavefront-coding Imaging Systems

  • Yangliang, Li;Qing, Ye;Lei, Wang;Hao, Zhang;Yunlong, Wu;Xian'an, Dou;Xiaoquan, Sun
    • Current Optics and Photonics
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    • 제7권1호
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    • pp.1-14
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    • 2023
  • Wavefront-coding imaging can achieve high-quality imaging along with a wide range of defocus. In this paper, the anti-laser detection and damage performance of wavefront-coding imaging systems using different asymmetric phase masks are studied, through modeling and simulation. Based on FresnelKirchhoff diffraction theory, the laser-propagation model of the wavefront-coding imaging system is established. The model uses defocus distance rather than wave aberration to characterize the degree of defocus of an imaging system. Then, based on a given defocus range, an optimization method based on Fisher information is used to determine the optimal phase-mask parameters. Finally, the anti-laser detection and damage performance of asymmetric phase masks at different defocus distances and propagation distances are simulated and analyzed. When studying the influence of defocus distance, compared to conventional imaging, the maximum single-pixel receiving power and echo-detection receiving power of asymmetric phase masks are reduced by about one and two orders of magnitude respectively. When exploring the influence of propagation distance, the maximum single-pixel receiving power of asymmetric phase masks decreases by about one order of magnitude and remains stable, and the echodetection receiving power gradually decreases with increasing propagation distance, until it approaches zero.

MTCMOS Post-Mask Performance Enhancement

  • Kim, Kyo-Sun;Won, Hyo-Sig;Jeong, Kwang-Ok
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권4호
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    • pp.263-268
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    • 2004
  • In this paper, we motivate the post-mask performance enhancement technique combined with the Multi-Threshold Voltage CMOS (MTCMOS) leakage current suppression technology, and integrate the new design issues related to the MTCMOS technology into the ASIC design methodology. The issues include short-circuit current and sneak leakage current prevention. Towards validating the proposed techniques, a Personal Digital Assistant (PDA) processor has been implemented using the methodology, and a 0.18um process. The fabricated PDA processor operates at 333MHz which has been improved about 23% at no additional cost of redesign and masks, and consumes about 2uW of standby mode leakage power which could have been three orders of magnitude larger if the MTCMOS technology was not applied.

한국 무언탈놀이의 연극미학적 특성 (A Study on the Aesthetic Characteristics of Korean Pantomimic Mask-dance-drama)

  • 박진태
    • 공연문화연구
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    • 제19호
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    • pp.191-220
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    • 2009
  • 탈놀이는 무언극 형태와 유언극 형태가 혼합되어 있음에도 불구하고 기존의 연구에서 연극적·미학적 논의가 유언탈놀이 중심으로 전개된 사실을 반성하고, 무언극을 본격적으로 논의하여 유언극과 변별되는 연극미학을 정립하려고 하였다. 먼저 텍스트의 문제로 기존의 채록본을 검토하여 무언탈놀이를 기록함에 있어서 개괄적·설명적·해석적 기록을 한 오류를 지적하고, 객관적·묘사적 기록방법을 취하고, 무보(舞譜)를 작성하고, 동선(動線)까지 표시할 것을 주장하였다. 그리고 영상기록의 필요성도 재확인하였다. 다음으로 무언극을 '인상의 미믹(mimic)적 묘사와 몸짓에 의해 모방하는 표현예술'로 규정하고 물리적 신체동작과 기호화된 신체언어에 의한 미믹에 대하여 하회별신굿탈놀이의 무동춤·걸립놀이, 봉산탈춤의 노장·소무놀이와 사상좌놀이, 수영들놀음의 사자춤놀이를 집중적으로 분석하였다. 마지막으로 등장인물이 동일한 무언극과 유언극, 동일한 마당의 무언탈과 유언탈을 대조하여 유언극이 음성언어매체를 이용하여 무언극보다 표현영역을 확장하고 표현력을 강화한 사실을 구명하였다. 그리고 탈놀이가 무언극으로 시작하여 유언극 시대로 이행하였지만 무언극이 여전히 존재하여 발달 단계가 상이한 두 연극양식이 적층·혼합되어 있는 연극사적 사실을 확인하였다.

Inductively coupled plasma etching of SnO2 as a new absorber material for EUVL binary mask

  • 이수진
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.124-124
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    • 2010
  • Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

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FCC 방출 전력 마스크에 적합한 UWB 펄스 생성 방법 (UWB Pulse Generation Method for the FCC Emission Mask)

  • 박장우;조성언;조경룡
    • 한국항행학회논문지
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    • 제10권4호
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    • pp.333-341
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    • 2006
  • 본 논문에서는 시간도약 UWB 신호의 주파수 특성을 해석하고 실제의 신호의 전력 스펙트럼은 주로 사용된 펄스의 전력 스펙트럼에 의하여 결정됨을 보였다. 또한, 코드 스펙트럼의 상세한 해석을 하였다. 그리고 FCC의 emission mask를 충분히 활용할 수 있는 펄스의 설계 방법을 제시하였다. 제시한 펄스 설계방법은 가우시안 미분 펄스의 시간 지연 파형을 선형으로 결합하였으며 결합된 새로운 파형은 FCC의 전력 밀도 마스크를 충분히 활용할 수 있다. 이때 선형 결합 계수는 LSE(Least Square Error)를 최소화 하도록 계산하였다. 다양한 계수의 수와 기본 펄스들에 대한 결과적인 펄스의 전력 스펙트럼 밀도 및 파형을 계산하였다.

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Neighborhood 관계를 이용한 DUET Generalization (Generalization of DUET using neighborhood relationship)

  • 우성민;정홍
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.1017-1018
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    • 2008
  • In this paper, we propose a method that makes use of neighborhood relationship in 2D spectrogram of separated sources toward the generalization of the binary mask in Degenerate Unmixing Estimation Technique (DUET). A new generalized mask can be consist of five to ten mask. According to the new mask, the original power of the spectrogram in each frequency-time point is assigned. The result showed a smooth and tender wave-form, indicating a high speech separation performance compared to the original method.

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