• Journal of Power Electronics
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• 제16권5호
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• pp.1843-1850
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• 2016

This study focused on predicting the fatigue life of an insulated gate bipolar transistor (IGBT) power module for electric locomotives. The effects of different wiring technologies, including aluminum wires, copper wires, aluminum ribbons, and copper ribbons, on solder fatigue life were investigated to meet the high power requirement of the IGBT module. The module's temperature distribution and solder fatigue behavior were investigated through coupled electro-thermo-mechanical analysis based on the finite element method. The ribbons attained a chip junction temperature that was 30℃ lower than that attained with conventional round wires. The ribbons also exhibited a lower plastic strain in comparison with the wires. However, the difference in plastic strain and junction temperature among the different ribbon materials was relatively small. The ribbons also exhibited different crack propagation behaviors relative to the wires. For the wires, the cracks initiated at the outmost edge of the solder, whereas for the ribbons, the cracks grew in the solder layer beneath the ribbons. Comparison of fatigue failure areas indicated that ribbon bonding technology could substantially enhance the fatigue life of IGBT modules and be a potential candidate for high power modules.

• 한국철도학회논문집
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• 제20권3호
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• pp.339-348
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• 2017

철도차량용 전원창치는 추진제어용 전원장치와 보조전원장치로 구분된다. 추진제어용 전원장치는 철도차량의 추진 및 회생제동 등의 동작을 위한 것이며, 보조전원장치는 추진제어용 전원을 제외한 공기압축기, 조명기기, 차량제어전원 등의 보조전원에 사용되는 것이다. 각 전원장치는 고전압, 고전류 사양 특성에 따라 일반적으로 insulated-gate bipolar transistor (IGBT)를 스위칭 소자로 사용하고 있다. 스위칭 소자를 사용하기 위해서는 적절한 스위칭 동작을 구현하기 위한 구동회로(Gate Driver Unit, GDU)가 필수적이다. 본 논문에서는 철도차량에 적용되고 있는 IGBT용 GDU에 적용되고 있는 기술 동향을 분석하고 철도차량용 IGBT GDU 설계 시 고려사항에 대해 알아보고자 한다.

• Nuclear Engineering and Technology
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• 제56권9호
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• pp.3740-3749
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• 2024

To reduce the losses caused by aging failure of insulation gate bipolar transistor (IGBT), which is the core components of nuclear power plant rod position indicating and rod control (RPC) system. It is necessary to conduct studies on its life prediction. The selection of IGBT failure characteristic parameters in existing research relies heavily on failure principles and expert experience. Moreover, the analysis and learning of time-domain degradation data have not been fully conducted, resulting in low prediction efficiency as the monotonicity, time correlation, and poor anti-interference ability of extracted degradation features. This paper utilizes the advantages of the stacked denoising autoencoder(SDAE) network in adaptive feature extraction and denoising capabilities to perform adaptive feature extraction on IGBT time-domain degradation data; establishes a long-short-term memory (LSTM) prediction model, and optimizes the learning rate, number of nodes in the hidden layer, and number of hidden layers using the Gray Wolf Optimization (GWO) algorithm; conducts verification experiments on the IGBT accelerated aging dataset provided by NASA PCoE Research Center, and selects performance evaluation indicators to compare and analyze the prediction results of the SDAE-LSTM model, PSOLSTM model, and BP model. The results show that the SDAE-LSTM model can achieve more accurate and stable IGBT life prediction.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
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• pp.128-132
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• 2003

This paper deals with the development of IGBT stacks for cost reduction. One stack is consist of 4 IGBTS in parallel. In the high- and mid-power converters, IGBT stacks are more suitable than single IGBTS in the aspects of total cost of semiconductor devices, time for purchasing, maintenance, radiation of heat, size of surge absorber and harmonic filter, frequency characteristics, and etc.. Problems accompanied by parallel construction are studied and solved. Economical efficiency is discussed and field tests with 100kVA UPS are tarried out to verify the validity of the developed IGBT stacks.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.105-108
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• 2020

In this study, experiments and simulations were conducted for a 1,200-V-class trench Si insulated-gate bipolar transistor (IGBT) with a small cell pitch below 2.5 ㎛. Presently, as a power device, the 1,200-V-class trench Si IGBT is used for automotives including electric vehicles, hybrid electric vehicles, and industrial motors. We obtained a breakdown voltage of 1,440 V, threshold of 6 V, and state voltage drop of 1.75 V. This device is superior to conventional IGBTs featuring a planar gate. To derive its electrical characteristics, we extracted design and process parameters. The cell pitch was 0.95 ㎛ and total wafer thickness was 140 ㎛ with a resistivity of 60 Ω·cm. We will apply these results to achieve fine-pitch gate power devices suitable for electrical automotive industries.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.713-718
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• 1998

Due to high power ratings and low conduction loss, the IGBT has become more attractive in high power applications. However, its slower characteristics than those of MOSFET cause severe switching losses and switching frequency limitation. This paper proposes the IGBT's soft switching concept with the help of MOSFET, where each of the IGBT and MOSFET plays its role during on-periods and switching instants. Also, the switching losses are analyzed by using the linearized modeling and the modeling and the operations of a converter are investigated to confirm the soft switching of IGBT's.

• 전력전자학회논문지
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• 제9권4호
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• pp.350-355
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• 2004

본 논문에서는 열원인 전력용 반도체 소자와 방열판 및 팬으로 구성된 강제 냉각방식 방열 시스템을 먼저 해석 가능한 요소로 나눈 후 각 요소에 대한 해석적이거나 실험적인 설계 식을 제시하고 이를 적용한 설계 방법을 제안하였다. 제안한 방법으로 400kW급 IGBT 인버터용 강제 냉각방식 방열 시스템을 설계하고 제작하였다. 실험결과는 설계 온도가 실험치에 대해 10［%］ 오차 범위 내에서 잘 일치함을 검증하여 제안한 해석적인 정상상태 설계방법의 타당성을 보였다.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제48권2호
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• pp.83-88
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• 1999

Series connection of power semiconductor devices is selected in high voltage and high power applications. It is important to prevent the overvoltage from being induced across a device above ratings by the proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by controlling the slope of collector voltage under the turn-off transient in the series connected IGBTs. The proposed gate control scheme changes the slope of collector voltage by sensing the collector voltage and controlling the gate signal actively. The new series connected IGBT gate driver is made and its validity is verified by the experimental results for series connected IGBT circuit.

• 한국산학기술학회논문지
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• 제11권12호
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• pp.4975-4983
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• 2010

본 논문은 전력전자회로에서 많이 사용되고 있는 가장 범용적이고 강력한 시뮬레이터인 PSPICE와 MATLAB에 적용하여 소자를 모델링하여 보다 쉽게 이해하고, 다양한 제어기술을 적용시킬 수 있도록 미시적인 IGBT, 거시적인 IGBT, PWM 발생기 그리고 유도 전동기를 라이브러리화 하여 모델링의 타당성을 해석하였다. 미시적인 IGBT 모델의 소자특성을 실험을 통해 모델링의 정확성을 입증하였으며, 거시적인 IGBT모델은 사이클로 컨버터와 유도 전동기의 부하를 가진 전압형 PWM 인버터에 적용시켜 시뮬레이션 하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 B
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• pp.1105-1107
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• 2003

일반적으로 정지형 석자시스템은 싸이리스터 제어 정류기를 사용하고 있으나 제주화력에는 IGBT 소자로 구성된 강압형 쵸퍼방식으로 하드웨어 연구가 필요한 실정이다. 발전기 제어시스템이 후비보호가 없는 경우 사소한 고장으로 인한 코아 발전소의 정지로 계통 파급효과가 크게 발생되므로, 이런 현상을 방지위해 디지털 다중화 방식의 설비를 개발하여 신뢰도의 증강 및 안정적인 전력공급이 필요하다. 이를 위해 우선적용 IGBT 소자로 구성된 디지털 여자시스템의 분석을 통해 현장적용에 알맞은 디지털 여자시스템의 신뢰성, 안정성, 기능성을 갖춘 발전기 여자시스템를 개발하고자 한다.